LSF811C1 [MARKTECH]
Infrared Emitting Diode; 红外发光二极管
| 型号： | LSF811C1 |
| 厂家： | 
MARKTECH CORPORATE |
| 描述： | Infrared Emitting Diode |
| 文件： | 总2页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Infrared Emitting Diode
LSF811C1
①Anode
②Cathode
FEATURES
･High-output Power
･Compact
Dimensions (Unit:mm)
･High Reliability
APPLICATIONS ･Optical Switches
･Optical Sensors
･Medical Application
SPECTRAL OUTPUT
120
100
80
60
40
20
0
1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
I T E M
Forward Current (DC)
Forward Current (Pulse)*1
Reverse Voltage
Power Dissipation
Operating Temp.
SYMBOL RATINGS
UNIT
mA
A
IF
IFP
VR
PD
Topr
Tstg
Tj
60
0.5
5
V
120
mW
℃
℃
℃
℃
-20 TO 85
-30 TO 100
100
Storage Temp.
Junction Temp.
Lead Soldering Temp.*2
*1:Tw=10uS,T=10mS
Tls
260
710
810
910
WAVELENGTH(nm)
*2:Time 5 Sec max,Position:Up to 3mm from the body
To purchase this part contact
Marktech Optoelectronics at
Marktech
Optoelectronics
www.marktechopto.com
800.984.5337
Infrared Emitting Diode
LSF811C1
2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃)
I T E M
Power Output
Forward Voltage
SYMBOL
PO
CONDITIONS
IF=20mA
IF=20mA
VR=5V
MIN
TYP
6.5
MAX
1.9
UNIT
mW
V
VF
IR
1.4
Reverse Current
100 μA
nm
Peak Wavelength
Spectral Line Half Width
Half Intensity Beam Angle
Rise Time
λp IF=20mA
Δλ IF=20mA
810
30
±25
－
－
nm
deg.
nS
nS
pF
θ
Tr
Tf
Cj
P/T
V/T
IF=20mA
IFP=50mA
IFP=50mA
1MHz ,V=0V
IF=10mA
Fall Time
Junction Capacitance
Temp. Coefficient of PO
Temp. Coefficient of VF
60
-0.6
-2.0
%/℃
mV/℃
IF=10mA
RELATIVE POWER vs FORWARD
CURRENT
FORWARD I-V CHARACTERISTICS
RADIATION PATTERN
400
350
300
250
200
150
100
50
120
100
80
60
40
20
0
80
70
60
50
40
30
20
10
0
0
-90 -60 -30
0
30
60
90
0
1
2
3
0
20
40
60
80
BEAM ANGLE(deg.)
FORWARD VOLTAGE(V)
FORWARD CURRENT(mA)
FORWARD VOLTAGE vs
TEMPERATURE
IF=10mA
POWER OUTPUT vs TEMPERATURE
IF=10mA
THERMAL DERATING CURVE
1.6
1.5
1.4
1.3
1.2
1.1
1
80
70
60
50
40
30
20
10
0
140
120
100
80
60
40
20
0
0
-30
0
30
60
90
-30
0
30
60
90
-30
0
30
60
90
AMBIENT TEMPERATURE(℃)
AMBIENT TEMPERATURE(℃)
AMBIENT TEMPERATURE(℃)
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