LSF830C1 [MARKTECH]
Infrared Emitting Diode; 红外发光二极管
| 型号： | LSF830C1 |
| 厂家： | 
MARKTECH CORPORATE |
| 描述： | Infrared Emitting Diode |
| 文件： | 总1页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Infrared Emitting Diode
LSF830C1
2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃)
I T E M
Power Output
Forward Voltage
Reverse Current
Peak Wavelength
SYMBOL
PO
CONDITIONS
IF=20mA
IF=20mA
VR=5V
MIN
TYP
2.5
MAX
2.1
UNIT
mW
V
VF
IR
1.5
100 μA
nm
λp IF=20mA
Δλ IF=20mA
830
30
±25
Spectral Line Half Width
Half Intensity Beam Angle
nm
deg.
θ
IF=20mA
FORWARD I-V CHARACTERISTICS
RELATIVE POWER vs FORWARD CURRENT
250
60
50
40
30
20
10
0
200
150
100
50
① Anode
② Cathode
FEATURES
･High-output Power
Dimensions (Unit:mm)
･Compact
0
･High Reliability
0
10
20
30
40
50
60
0
1
2
3
APPLICATIONS ･Optical Switches
･Optical Sensors
FORWARD CURRENT(mA)
FORWARD VOLTAGE(V)
SPECTRAL OUTPUT
THERMAL DERATING CURVE
RADIATION PATTERN
120
100
80
60
40
20
0
80
70
60
50
40
30
20
10
0
120
100
80
60
40
20
0
1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
I T E M
Forward Current (DC)
Forward Current (Pulse)*1
Reverse Voltage
RATINGS
60
SYMBOL
IF
IFP
UNIT
mA
A
0.5
5
VR
V
Power Dissipation
Operating Temp.
Storage Temp.
100
PD
mW
℃
℃
℃
℃
Topr
Tstg
Tj
-20 TO 85
-30 TO 100
100
-90
-60
-30
0
30
60
90
-30
0
30
60
90
Junction Temp.
BEAM ANGLE(deg.)
AMBIENT TEMPERATURE(℃)
Lead Soldering Temp.*2
*1:Tw=10uS,T=10mS
Tls
260
730
830
930
WAVELENGTH(nm)
*2:Time 5 Sec max,Position:Up to 3mm from the body
To purchase this part contact
Marktech Optoelectronics at
Marktech
Optoelectronics
www.marktechopto.com
800.984.5337
OPTRANS
2008/6/9
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