LSF872C1S [MARKTECH]
Infrared Emitting Diode; 红外发光二极管
| 型号： | LSF872C1S |
| 厂家： | 
MARKTECH CORPORATE |
| 描述： | Infrared Emitting Diode |
| 文件： | 总1页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Infrared Emitting Diode
LSF872C1S
2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃)
I T E M
Power Output
Forward Voltage
Reverse Current
Peak Wavelength
Spectral Line Half Width
Half Intensity Beam Angle
Junction Capacitance
Temp. Coefficient of PO
Temp. Coefficient of VF
CONDITIONS
IF=50mA
IF=50mA
VR=5V
SYMBOL
PO
MIN
14.0
TYP
17.0
1.55
MAX
20.0
2.0
UNIT
mW
V
VF
IR
10 μA
nm
λp IF=50mA
Δλ IF=50mA
870
45
±25
50
-0.3
-2.1
nm
deg.
pF
%/℃
mV/℃
IF=50mA
1MHz ,V=0V
IF=10mA
IF=10mA
θ
Cj
P/T
V/T
RELATIVE POWER vs FORWARD
CURRENT
RADIATION PATTERN
FORWARD I-V CHARACTERISTICS
120
120
100
80
60
40
20
0
250
200
150
100
50
① Anode
② Cathode
100
80
60
40
20
0
FEATURES
･High-output Power
･Compact
Dimensions (Unit:mm)
･High Reliability
APPLICATIONS ･Optical Switches
･Optical Sensors
0
-90 -60 -30
0
30
60
90
0
1
2
3
SPECTRAL OUTPUT
0
25
50
75
100
125
BEAM ANGLE(deg.)
FORWARD VOLTAGE(V)
FORWARD CURRENT(mA)
120
100
80
60
40
20
0
1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
POWER OUTPUT vs TEMPERATURE
IF=10mA
FORWARD VOLTAGE vs
TEMPERATURE
IF=10mA
I T E M
Forward Current (DC)
Forward Current (Pulse)*1
Reverse Voltage
RATINGS
60
SYMBOL
IF
IFP
UNIT
mA
A
THERMAL DERATING CURVE
140
120
100
80
120
100
80
60
40
20
0
1.6
1.5
1.4
1.3
1.2
1.1
1
0.5
5
VR
V
Power Dissipation
Operating Temp.
Storage Temp.
100
PD
mW
℃
℃
℃
℃
60
Topr
Tstg
Tj
-20 TO 85
-30 TO 100
100
40
20
Junction Temp.
0
Lead Soldering Temp.*2
*1:Tw=10uS,T=10mS
Tls
260
-30
0
30
60
90
-30
0
30
60
90
770
870
970
-30
0
30
60
90
AMBIENT TEMPERATURE(℃)
AMBIENT TEMPERATURE(℃)
WAVELENGTH(nm)
AMBIENT TEMPERATURE(℃)
*2:Time 5 Sec max,Position:Up to 3mm from the body
To purchase this part contact
Marktech Optoelectronics at
Marktech
OPTRANS
Optoelectronics
www.marktechopto.com
2006/5/24
800.984.5337
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