L8550HRLT1G [LRC]
General Purpose Transistors PNP Silicon Epitaxial planar type.;
| 型号： | L8550HRLT1G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | General Purpose Transistors PNP Silicon Epitaxial planar type. |
| 文件： | 总3页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
L8550HPLT1G
Series
PNP Silicon
3
FEATURE
ƽHigh current capacity in compact package.
ƽEpitaxial planar type.
1
ƽPNP complement: L8550H
2
ƽ
We declare that the material of product compliance with RoHS requirements.
SOT–23
DEVICE MARKING AND ORDERING INFORMATION
COLLECTOR
3
Shipping
Device
Marking
3000/Tape&Reel
L8550HPLT1G
1HB
1
10000/Tape&Reel
3000/Tape&Reel
L8550HPLT3G
L8550HQLT1G
1HB
1HD
BASE
2
EMITTER
10000/Tape&Reel
3000/Tape&Reel
L8550HQLT3G
L8550HRLT1G
1HD
1HF
10000/Tape&Reel
3000/Tape&Reel
L8550HRLT3G
L8550HSLT1G
L8550HSLT3G
1HF
1HH
1HH
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
VCEO
VCBO
VEBO
-25
-40
-5
V
V
V
I
C
-1500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board,(1)
P
D
T
A
=25°C
225
1.8
mW
Derate above 25°C
mW/°C
Thermal Resistance,Junction to Ambient
RθJ A
556
°C/W
Total Device Dissipation
Alumina Substrate,(2) TA=25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
RθJ A
417
°C/W
°C
T
j,
T
S
t
g
-55 to +150
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Rev.A 1/3
LESHAN RADIO COMPANY, LTD.
L8550HPLT1G
Series
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=-1.0mA)
–
–
–
–
–
–
V(BR)CEO
V(BR)EBO
V(BR)CBO
-25
-5
V
V
V
Emitter-Base Breakdown Voltage
(IE=-100µΑ)
Collector-Base Breakdown Voltage
(IC=-100µΑ)
-40
Collector Cutoff Current (VCB=-35V)
Emitter Cutoff Current (VEB=-4V)
ELECTRICAL CHARACTERISTICS (T
Characteristic
ICBO
IEBO
–
–
–
–
-150
-150
nA
nA
A
=25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
IC=-100mA,VCE=-1V
HFE
100
-
-
600
-0.5
Collector-Emitter Saturation Voltage
(IC=-800mA,IB=-80mA)
VCE(S)
-
V
NOTE :
*
P
Q
R
S
hFE
100~200
150~300
200~400
300~600
Rev.A 2/3
LESHAN RADIO COMPANY, LTD.
L8550HPLT1G
Series
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
A
L
2. CONTROLLING DIMENSION: INCH.
3
INCHES
MAX
MILLIMETERS
DIM
S
B
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
1
2
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
V
G
C
K
L
H
J
D
K
S
V
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.A 3/3
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