L8550QLT1G [LRC]
General Purpose Transistors PNP Silicon; 通用晶体管PNP硅
| 型号： | L8550QLT1G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | General Purpose Transistors PNP Silicon |
| 文件： | 总4页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
L8550PLT1G
Series
FEATURE
We declare that the material of product compliance with RoHS requirements.
3
1
2
DEVICE MARKING AND ORDERING INFORMATION
SOT– 23
Shipping
Device
Marking
85P
3000/Tape&Reel
L8550PLT1G
85P
10000/Tape&Reel
3000/Tape&Reel
COLLECTOR
3
L8550PLT3G
L8550QLT1G
1YD
1YD
1
10000/Tape&Reel
3000/Tape&Reel
L8550QLT3G
L8550RLT1G
BASE
1YF
1YF
1YH
1YH
2
EMITTER
10000/Tape&Reel
3000/Tape&Reel
L8550RLT3G
L8550SLT1G
L8550SLT3G
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
V CEO
V CBO
V EBO
IC
Value
-25
Unit
Collector-Emitter Voltage
Collector-Base voltage
Emitter-base Voltage
Collector current-continuoun
V
V
-40
-5
V
-800
mAdc
THERMALCHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR- 5 Board (1)
T A = 25 °C
Derate above 25 °C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
PD
225
1.8
mW
mW /°C
°C/W
RθJA
PD
556
Alumina Substrate, (2) T A = 25 °C
Derate above 25 °C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
300
2.4
mW
mW /°C
°C/W
°C
RθJA
417
T J , T stg -55 to +150
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
L8550PLT1G
Series
ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFFCHARACTERISTICS
Collector-Emitter Breakdown Voltage
(I C =-1.0mA)
V (BR)CEO
V (BR)EBO
V (BR)CBO
-25
-5
-40
–
–
–
–
–
V
V
Emitter-Base Breakdown Voltage
(I E = -100 µA)
Collector-Base Breakdown voltage
(I C= -100 µA)
Collector Cutoff Current
(VCB = -35 V)
–
–
V
I
–
-150
-150
nA
nA
CBO
Emitter Cutoff Current
I EBO
–
–
(VEB = -4V)
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ON CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
DC Current Gain
HFE
100
–
600
(I C =-100mA, VCE=-1V)
Collector-Emitter Saturation Voltage
VCE(S)
–
–
-0.5
V
(I C =-800mA, I =-80mA)
B
NOTE:
*
P
Q
R
S
hFE
100~200
150~300
200~400
300~600
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
L8550PLT1G
Series
Rev.O 3/4
LESHAN RADIO COMPANY, LTD.
L8550PLT1G
Series
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
A
L
2. CONTROLLING DIMENSION: INCH.
3
INCHES
MAX
MILLIMETERS
DIM
S
B
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
1
2
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
V
G
C
K
L
H
J
D
K
S
V
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 4/4
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