L8550PLT1 [LRC]
General Purpose Transistors PNP Silicon; 通用晶体管PNP硅
| 型号： | L8550PLT1 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | General Purpose Transistors PNP Silicon |
| 文件： | 总3页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
L8550*LT1
FEATURE
Pb-Free Package is available.
3
ORDERING INFORMATION
1
Device
Package
Shipping
2
L8550*LT1
SOT-23
SOT-23
3000/Tape&Reel
L8550*LT1G
(Pb-Free)
3000/Tape&Reel
SOT– 23
MAXIMUM RATINGS
Rating
Symbol
V CEO
V CBO
V EBO
IC
Value
25
Unit
COLLECTOR
3
Collector-Emitter Voltage
Collector-Base voltage
Emitter-base Voltage
Collector current-continuoun
V
V
40
5
V
1
800
mAdc
BASE
THERMALCHARACTERISTICS
Characteristic
2
Symbol
Max
Unit
EMITTER
Total Device Dissipation FR- 5 Board (1)
T A = 25 °C
Derate above 25 °C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
PD
225
1.8
mW
mW /°C
°C/W
RθJA
PD
556
Alumina Substrate, (2) T A = 25 °C
Derate above 25 °C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICEMARKING
300
2.4
mW
mW /°C
°C/W
°C
RθJA
417
T J , T stg -55 to +150
L8550QLT1 = 1YD L8550PLT1=85P
ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted)
Characteristic
OFFCHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage
(I C = 1.0mA)
V (BR)CEO
V (BR)EBO
V (BR)CBO
25
5
–
–
–
–
–
–
–
V
V
Emitter-Base Breakdown Voltage
(I E = 100µA)
Collector-Base Breakdown voltage
(I C= 100µA)
Collector Cutoff Current
(VCB = 35 V)
40
–
–
V
I
150
150
nA
nA
CBO
Emitter Cutoff Current
I EBO
–
(VEB =4V)
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
L8550*LT1–1/3
LESHAN RADIO COMPANY, LTD.
L8550*LT1
ON CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
DC Current Gain
h FE
150
–
600
(I C =100mA V CE=1V)
Collector-Emitter Saturation Voltage
(I C =800mA I B=80mA)
V CE(S)
–
–
0.5
V
NOTE:
*
P
Q
R
S
hFE
100~200
150~300
200~400
300~600
L8550*LT1–2/3
LESHAN RADIO COMPANY, LTD.
L8550*LT1
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
A
L
2. CONTROLLING DIMENSION: INCH.
3
INCHES
MAX
MILLIMETERS
DIM
S
B
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
1
2
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
V
G
C
K
L
H
J
D
K
S
V
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
L8550*LT1–3/3
相关型号：
L8561
The UTC L8561 is a Power Factor Corrector, which can work in wide input voltage range applications (from 85V ~ 265V) with an excellent THD.
UTC
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