BC857BLT1 [LRC]
General Purpose Transistors(PNP Silicon); 通用晶体管（ PNP硅）
| 型号： | BC857BLT1 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | General Purpose Transistors(PNP Silicon) |
| 文件： | 总5页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
3
PNP Silicon
COLLECTOR
BC856ALT1, BLT1
BC857ALT1, BLT1
BC858ALT1, BLT1
CLT1
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
V CEO
V CBO
V EBO
I C
BC856
–65
BC857
–45
BC858
–30
Unit
3
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V
–80
–50
–30
V
1
–5.0
–100
–5.0
–100
–5.0
–100
V
2
mAdc
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
P D
225
1.8
mW
mW/°C
°C/W
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
R θJA
P D
556
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
300
2.4
mW
mW/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R θJA
417
T J , T stg
–55 to +150
DEVICE MARKING
BC856ALT1 = 3A; BC856BLT1 = 3B; BC857ALT1 = 3E; BC857BLT1 = 3F;
BC858ALT1 = 3J; BC858BLT1 = 3K; BC858CLT1 = 3L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA)
BC856 Series
BC857 Series
BC858 Series
BC856 Series
BC857 Series
BC858 Series
– 65
– 45
– 30
– 80
– 50
– 30
– 80
– 50
– 30
– 5.0
– 5.0
– 5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V (BR)CEO
V (BR)CES
V (BR)CBO
v
v
v
v
—
Collector–Emitter Breakdown Voltage
—
(IC = –10 µA, VEB = 0)
—
—
Collector–Base Breakdown Voltage BC856 Series
—
(IC = – 10 µA)
BC857 Series
BC858 Series
BC856 Series
BC857 Series,
BC858 Series
—
—
Emitter–Base Breakdown Voltage
—
(IE = – 1.0 µA)
V (BR)EBO
—
—
Collector Cutoff Current (VCB = – 30 V)
(VCB = – 30 V, TA = 150°C)
– 15
– 4.0
nA
I CBO
—
µA
1.FR–5=1.0 x 0.75 x 0.062in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
M5–1/5
LESHAN RADIO COMPANY, LTD.
BC856ALT1, BLT1 BC857ALT1, BLT1 BC858ALT1, BLT1, CLT1
ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC858C,
h FE
—
—
90
150
270
180
290
520
—
—
—
—
(IC = –10 µA, V CE = –5.0 V)
—
—
(I C = –2.0 mA, V CE = –5.0 V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC858C
125
220
420
—
250
475
800
– 0.3
– 0.65
—
Collector–Emitter Saturation Voltage (I C = –10 mA, IB = – 0.5 mA)
Collector–Emitter Saturation Voltage (I C = –100 mA, IB = – 5.0 mA)
Base–Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA)
Base–Emitter Saturation Voltage (IC = –100 mA, IB = –5.0 mA)
Base–Emitter on Voltage (I C = –2.0 mA, VCE = –5.0 V)
V CE(sat)
V BE(sat)
V BE(on)
V
V
—
—
—
– 0.7
– 0.9
—
—
—
– 0.6
—
– 0.75
– 0.82
V
Base–Emitter Voltage (I C = –10 mA, VCE = –5.0 V)
—
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f T
100
—
—
MHz
(I C = – 10 mA, VCE = – 5.0 Vdc, f = 100 MHz)
Output Capacitance (V CB = – 10 V, f = 1.0 MHz)
Noise Figure
C ob
NF
—
—
4.5
10
pF
dB
––
––
(I C= – 0.2 mA,VCE= – 5.0 Vdc, R S= 2.0 kΩ, f =1.0 kHz, BW= 200 Hz)
M5–2/5
LESHAN RADIO COMPANY, LTD.
BC856ALT1, BLT1 BC857ALT1, BLT1, BC858ALT1, BLT1, CLT1
BC857/BC858
–1.0
2.0
1.5
TA = 25°C
–0.9
VCE= –10 V
TA = 25°C
V BE(sat) @ IC /I B=10
–0.8
–0.7
–0.6
1.0
0.7
V
BE(on) @ VCE = –10 V
–0.5
–0.4
–0.3
–0.2
–0.1
0
0.5
0.3
0.2
VCE(sat) @ IC /I B = 10
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
–200
–0.1
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50 –100
IC , COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
IC , COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
–2.0
–1.6
–1.2
–0.8
–0.4
0
1.0
T
A = 25°C
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
I C
=
IC= –200 mA
IC= –100 mA
I C= –50 mA
–10 mA
IC= –20 mA
–0.02
–0.1
–1.0
–10
–20
–0.2
–1.0
–10
–100
IB , BASE CURRENT (mA)
IC , COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region
Figure 4. Base–Emitter Temperature Coefficient
400
300
200
10.0
C ib
7.0
5.0
TA=25°C
100
80
V CE =–10V
T A = 25°C
C ob
3.0
2.0
60
40
30
20
1.0
–0.4
–0.6
–1.0
–2.0
–4.0 –6.0
–10
–20 –30 –40
–0.5
–1.0
–2.0 –3.0
–5.0
–10
–20 –30
–50
I C , COLLECTOR CURRENT (mAdc)
V R , REVERSE VOLTAGE (VOLTS)
Figure 6. Current–Gain – Bandwidth Product
Figure 5. Capacitances
M5–3/5
LESHAN RADIO COMPANY, LTD.
BC856ALT1, BLT1 BC857ALT1, BLT1, BC858ALT1, BLT1, CLT1
BC856
–1.0
TJ= 25°C
VCE = –5.0V
TA = 25°C
–0.8
VBE(sat) @ IC/IB= 10
2.0
1.0
–0.6
VBE @VCE= –5.0 V
–0.4
0.5
0.2
–0.2
VCE(sat) @ I C /I B= 10
0
–0.1–0.2
–1.0–2.0 –5.0–10–20 –50–100–200
I C , COLLECTOR CURRENT (mA)
–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
IC , COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
Figure 7. DC Current Gain
–2.0
–1.6
–1.2
–0.8
–0.4
0
–1.0
–1.4
–1.8
–2.2
–2.6
–3.0
–200mA
–100mA
I C
=
–20mA
–50mA
–10 mA
θ VB for V BE
–55°C to 125°C
TJ= 25°C
–0.02
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50 –100 –200
I B , BASE CURRENT (mA)
IC , COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
40
20
VCE= –5.0 V
500
TJ= 25°C
C ib
200
10
100
50
8.0
6.0
4.0
C ob
20
2.0
–0.1–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20
–50 –100
–1.0
–10
–100
VR , REVERSE VOLTAGE (VOLTS)
IC , COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
M5–4/5
LESHAN RADIO COMPANY, LTD.
BC856ALT1, BLT1 BC857ALT1, BLT1, BC858ALT1, BLT1, CLT1
1.0
0.7
0.5
D=0.5
0.2
0.3
0.2
SINGLE PULSE
0.05
Z
R
Z
R
θJC (t) = r(t) R θJC
0.1
0.1
θJC = 83.3°C/W MAX
θJA (t) = r(t) R θJA
P(pk)
SINGLE PULSE
0.07
0.05
θJA = 200°C/W MAX
t1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
t 2
DUTY CYCLE, D = t1 /t 2
0.03
0.02
T J(pk) – T C = P (pk)
R θJC (t)
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0k 2.0k
5.0k
10k
t, TIME (ms)
Figure 13. Thermal Response
–200
The safe operating area curves indicate I C –V CE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
1s
3 ms
–100
–50
TJ= 25°C
TA= 25°C
The data of Figure 14 is based upon TJ(pk) = 150°C; T C or TA
is variable depending upon conditions. Pulse curves are valid for
BC558
BC557
BC556
duty cycles to 10% provided TJ(pk) < 150°C. TJ(pk) may be calcu-
lated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by the sec-
ondary breakdown.
–10
–5.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
–2.0
–1.0
–0.5
–10
–30 –45 –65 –100
V CE , COLLECTOR–EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
M5–5/5
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MOTOROLA
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