BC857BM [NEXPERIA]

PNP general purpose transistorsProduction;
BC857BM
型号: BC857BM
厂家: Nexperia    Nexperia
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PNP general purpose transistorsProduction

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Important notice  
Dear Customer,  
On 7 February 2017 the former NXP Standard Product business became a new company with the  
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semiconductors with its focus on the automotive, industrial, computing, consumer and wearable  
application markets  
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use  
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on  
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DISCRETE SEMICONDUCTORS  
DATA SHEET  
BC857M series  
PNP general purpose transistors  
Product data sheet  
2004 Mar 10  
Supersedes data of 2003 Jul 15  
NXP Semiconductors  
Product data sheet  
PNP general purpose transistors  
BC857M series  
FEATURES  
QUICK REFERENCE DATA  
SYMBOL  
Leadless ultra small plastic package  
(1 mm × 0.6 mm × 0.5 mm)  
PARAMETER  
MAX. UNIT  
VCEO  
IC  
collector-emitter voltage  
45  
V
Board space 1.3 × 0.9 mm  
collector current (DC)  
peak collector current  
100  
200  
mA  
mA  
Power dissipation comparable to SOT23.  
ICM  
APPLICATIONS  
PINNING  
General purpose small signal DC  
PIN  
1
DESCRIPTION  
Low and medium frequency AC applications  
base  
Mobile communications, digital (still) cameras, PDAs,  
PCMCIA cards.  
2
emitter  
collector  
3
DESCRIPTION  
PNP general purpose transistor in a SOT883 leadless ultra  
small plastic package.  
NPN complement: BC847M series.  
3
2
handbook, halfpage  
2
1
3
MARKING  
1
Bottom view  
MAM469  
TYPE NUMBER  
BC857AM  
MARKING CODE  
D1  
D2  
D3  
BC857BM  
BC857CM  
Fig.1 Simplified outline (SOT883) and symbol.  
ORDERING INFORMATION  
TYPE NUMBER  
PACKAGE  
DESCRIPTION  
NAME  
VERSION  
BC857AM  
BC857BM  
BC857CM  
Leadless ultra small plastic package; 3 solder lands; body  
1.0 x 0.6 x 0.5 mm  
SOT883  
2004 Mar 10  
2
NXP Semiconductors  
Product data sheet  
PNP general purpose transistors  
BC857M series  
LIMITING VALUES  
In accordance with the Absolute Maximum System (IEC 60134).  
SYMBOL  
PARAMETER  
collector-base voltage  
CONDITIONS  
open emitter  
MIN.  
MAX.  
50  
UNIT  
VCBO  
VCEO  
VEBO  
IC  
V
V
V
collector-emitter voltage  
emitter-base voltage  
collector current (DC)  
peak collector current  
peak base current  
open base  
45  
open collector  
5  
100  
200  
100  
mA  
mA  
mA  
ICM  
IBM  
Ptot  
total power dissipation  
Tamb 25 °C  
note 1  
250  
mW  
mW  
°C  
note 2  
430  
Tstg  
Tj  
storage temperature  
65  
+150  
150  
junction temperature  
°C  
Tamb  
operating ambient temperature  
65  
+150  
°C  
Notes  
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.  
2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth(j-a)  
thermal resistance from junction to ambient in free air  
note 1  
note 2  
500  
290  
K/W  
K/W  
Notes  
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.  
2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2.  
2004 Mar 10  
3
NXP Semiconductors  
Product data sheet  
PNP general purpose transistors  
BC857M series  
CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
VCB = 30 V; IE = 0  
MIN.  
MAX.  
15  
UNIT  
nA  
ICBO  
collector-base cut-off current  
VCB = 30 V; IE = 0; Tj = 150 °C  
VEB = 5 V; IC = 0  
5  
μA  
IEBO  
hFE  
emitter-base cut-off current  
DC current gain  
BC857AM  
100  
nA  
VCE = 5 V; IC = 2 mA  
125  
220  
420  
600  
250  
475  
800  
750  
820  
200  
400  
2.5  
BC857BM  
BC857CM  
VBE  
base-emitter voltage  
IC = 2 mA; VCE = 5 V  
IC = 10 mA; VCE = 5 V  
mV  
mV  
mV  
mV  
pF  
VCEsat  
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA  
IC = 100 mA; IB = 5 mA; note 1  
Cc  
fT  
collector capacitance  
transition frequency  
IE = ie = 0; VCB = 10 V; f = 1 MHz  
VCE = 5 V; IC = 10 mA;  
100  
MHz  
f = 100 MHz  
F
noise figure  
IC = 200 μA; VCE = 5 V;  
10  
dB  
RS = 2 kΩ; f = 1 kHz; B = 200 Hz  
Note  
1. Pulse test: tp 300 μs; δ ≤ 0.02.  
2004 Mar 10  
4
NXP Semiconductors  
Product data sheet  
PNP general purpose transistors  
BC857M series  
GRAPHICAL INFORMATION BC857AM  
MLE188  
MLE189  
500  
1200  
handbook, halfpage  
handbook, halfpage  
V
BE  
h
FE  
(mV)  
400  
1000  
(1)  
(1)  
(2)  
300  
800  
600  
400  
200  
(2)  
200  
(3)  
(3)  
100  
0
10  
2  
1  
2
3
2  
1  
2
3
10  
1  
10  
10  
10  
(mA)  
10  
10  
1  
10  
10  
10  
(mA)  
I
I
C
C
VCE = 5 V.  
VCE = 5 V.  
(1) Tamb = 150 °C.  
(2) amb = 25 °C.  
(3) Tamb = 55 °C.  
(1) Tamb = 55 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 150 °C.  
T
Fig.3 Base-emitter voltage as a function of  
collector current; typical values.  
Fig.2 DC current gain; typical values.  
MLE190  
MLE191  
4
10  
1200  
handbook, halfpage  
handbook, halfpage  
V
BEsat  
(mV)  
V
CEsat  
(mV)  
1000  
(1)  
3
10  
(2)  
800  
(3)  
600  
(1)  
(3)  
2
10  
(2)  
400  
200  
10  
1  
2
3
1  
2
3
10  
1  
10  
10  
10  
10  
1  
10  
10  
10  
(mA)  
I
(mA)  
I
C
C
IC/IB = 20.  
IC/IB = 20.  
(1) Tamb = 150 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 55 °C.  
(1) Tamb = 55 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 150 °C.  
Fig.4 Collector-emitter saturation voltage as a  
function of collector current; typical values.  
Fig.5 Base-emitter saturation voltage as a  
function of collector current; typical values.  
2004 Mar 10  
5
NXP Semiconductors  
Product data sheet  
PNP general purpose transistors  
BC857M series  
GRAPHICAL INFORMATION BC857BM  
MLE192  
MLE193  
1000  
1200  
handbook, halfpage  
handbook, halfpage  
V
BE  
h
FE  
(mV)  
800  
1000  
(1)  
(2)  
600  
(1)  
800  
600  
400  
200  
400  
(2)  
(3)  
200  
(3)  
0
10  
2  
1  
2
3
2  
1  
2
3
10  
1  
10  
10  
10  
(mA)  
10  
10  
1  
10  
10  
10  
(mA)  
I
I
C
C
VCE = 5 V.  
VCE = 5 V.  
(1) Tamb = 150 °C.  
(2) amb = 25 °C.  
(3) Tamb = 55 °C.  
(1) Tamb = 55 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 150 °C.  
T
Fig.7 Base-emitter voltage as a function of  
collector current; typical values.  
Fig.6 DC current gain; typical values.  
MLE194  
MLE195  
4
10  
1200  
handbook, halfpage  
handbook, halfpage  
V
BEsat  
(mV)  
V
CEsat  
(mV)  
1000  
(1)  
3
10  
(2)  
800  
(3)  
600  
(1)  
(3)  
2
10  
(2)  
400  
200  
10  
1  
2
3
1  
2
3
10  
1  
10  
10  
10  
10  
1  
10  
10  
10  
(mA)  
I
I
(mA)  
C
C
IC/IB = 20.  
IC/IB = 20.  
(1) Tamb = 150 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 55 °C.  
(1) Tamb = 55 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 150 °C.  
Fig.8 Collector-emitter saturation voltage as a  
function of collector current; typical values.  
Fig.9 Base-emitter saturation voltage as a  
function of collector current; typical values.  
2004 Mar 10  
6
NXP Semiconductors  
Product data sheet  
PNP general purpose transistors  
BC857M series  
GRAPHICAL INFORMATION BC857CM  
MLE196  
MLE197  
1000  
1200  
handbook, halfpage  
handbook, halfpage  
V
BE  
h
FE  
(1)  
(mV)  
800  
1000  
(1)  
(2)  
600  
800  
600  
(2)  
400  
(3)  
(3)  
200  
400  
200  
0
10  
1  
2
3
2  
1  
2
3
10  
1  
10  
10  
10  
(mA)  
10  
1  
10  
10  
10  
(mA)  
I
I
C
C
VCE = 5 V.  
VCE = 5 V.  
(1) Tamb = 150 °C.  
(2) amb = 25 °C.  
(3) Tamb = 55 °C.  
(1) Tamb = 55 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 150 °C.  
T
Fig.11 Base-emitter voltage as a function of  
collector current; typical values.  
Fig.10 DC current gain; typical values.  
MLE198  
MLE199  
4
10  
1200  
handbook, halfpage  
handbook, halfpage  
V
BEsat  
(mV)  
V
CEsat  
(mV)  
1000  
(1)  
3
10  
(2)  
800  
(3)  
600  
(1)  
(3)  
2
10  
(2)  
400  
200  
10  
1  
2
3
1  
2
3
10  
1  
10  
10  
10  
10  
1  
10  
10  
10  
(mA)  
I
I
(mA)  
C
C
IC/IB = 20.  
IC/IB = 20.  
(1) Tamb = 150 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 55 °C.  
(1) Tamb = 55 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 150 °C.  
Fig.12 Collector-emitter saturation voltage as a  
function of collector current; typical values.  
Fig.13 Base-emitter saturation voltage as a  
function of collector current; typical values.  
2004 Mar 10  
7
NXP Semiconductors  
Product data sheet  
PNP general purpose transistors  
BC857M series  
PACKAGE OUTLINE  
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm  
SOT883  
L
L
1
2
b
3
b
e
1
1
e
1
A
A
1
E
D
0
0.5  
1 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
(1)  
1
UNIT  
A
b
b
D
E
e
e
L
L
1
1
1
max.  
0.50  
0.46  
0.20 0.55 0.62 1.02  
0.12 0.47 0.55 0.95  
0.30 0.30  
0.22 0.22  
mm  
0.03  
0.35 0.65  
Note  
1. Including plating thickness  
REFERENCES  
JEDEC  
OUTLINE  
VERSION  
EUROPEAN  
PROJECTION  
ISSUE DATE  
IEC  
JEITA  
03-02-05  
03-04-03  
SOT883  
SC-101  
2004 Mar 10  
8
NXP Semiconductors  
Product data sheet  
PNP general purpose transistors  
BC857M series  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DISCLAIMERS  
above those given in the Characteristics sections of this  
document is not implied. Exposure to limiting values for  
extended periods may affect device reliability.  
General Information in this document is believed to be  
accurate and reliable. However, NXP Semiconductors  
does not give any representations or warranties,  
expressed or implied, as to the accuracy or completeness  
of such information and shall have no liability for the  
consequences of use of such information.  
Terms and conditions of sale NXP Semiconductors  
products are sold subject to the general terms and  
conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, including those  
pertaining to warranty, intellectual property rights  
infringement and limitation of liability, unless explicitly  
otherwise agreed to in writing by NXP Semiconductors. In  
case of any inconsistency or conflict between information  
in this document and such terms and conditions, the latter  
will prevail.  
Right to make changes NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
No offer to sell or license Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Suitability for use NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in medical, military, aircraft, space or life support  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Export control This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Quick reference data The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Applications Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) may cause permanent damage to  
the device. Limiting values are stress ratings only and  
operation of the device at these or any other conditions  
2004 Mar 10  
9
NXP Semiconductors  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were  
made to the content, except for the legal definitions and disclaimers.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2009  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
R75/02/pp10  
Date of release: 2004 Mar 10  
Document order number: 9397 750 12839  

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