BC857BLT1G [ONSEMI]
General Purpose Transistors PNP Silicon; 通用晶体管PNP硅
| 型号： | BC857BLT1G |
| 厂家： | 
ONSEMI |
| 描述： | General Purpose Transistors PNP Silicon |
| 文件： | 总7页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC856ALT1G Series
General Purpose
Transistors
PNP Silicon
Features
http://onsemi.com
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
1
BASE
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
2
A
EMITTER
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
BC856
BC857
V
CEO
−65
−45
−30
V
BC858, BC859
3
Collector-Base Voltage
BC856
BC857
V
CBO
−80
−50
−30
V
1
BC858, BC859
2
Emitter−Base Voltage
V
−5.0
V
EBO
SOT−23 (TO−236AB)
CASE 318
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
I
C
−100
mAdc
STYLE 6
Symbol
Max
Unit
MARKING DIAGRAM
Total Device Dissipation FR−5 Board,
P
D
(Note 1) T = 25°C
225
1.8
mW
mW/°C
A
Derate above 25°C
xx M G
Thermal Resistance,
Junction−to−Ambient
R
556
°C/W
q
JA
G
1
Total Device Dissipation Alumina
P
D
Substrate, (Note 2) T = 25°C
Derate above 25°C
300
2.4
mW
mW/°C
A
xx = Device Code
xx = (Refer to page 6)
Thermal Resistance,
Junction−to−Ambient
R
417
°C/W
q
JA
M
= Date Code*
G
= Pb−Free Package
Junction and Storage Temperature
T , T
J
−55 to +150
°C
(Note: Microdot may be in either location)
stg
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
August, 2009 − Rev. 11
BC856ALT1/D
BC856ALT1G Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
BC856 Series
BC857 Series
BC858, BC859 Series
V
−65
−45
−30
−
−
−
−
−
−
V
(BR)CEO
(I = −10 mA)
C
Collector−Emitter Breakdown Voltage
BC856 Series
BC857A, BC857B Only
BC858, BC859 Series
V
−80
−50
−30
−
−
−
−
−
−
V
V
V
(BR)CES
(BR)CBO
(BR)EBO
(I = −10 mA, V = 0)
C
EB
Collector−Base Breakdown Voltage
(I = −10 mA)
C
BC856 Series
BC857 Series
BC858, BC859 Series
V
V
−80
−50
−30
−
−
−
−
−
−
Emitter−Base Breakdown Voltage
(I = −1.0 mA)
E
BC856 Series
BC857 Series
BC858, BC859 Series
−5.0
−5.0
−5.0
−
−
−
−
−
−
Collector Cutoff Current (V = −30 V)
I
−
−
−
−
−15
−4.0
nA
mA
CB
CBO
Collector Cutoff Current (V = −30 V, T = 150°C)
CB
A
ON CHARACTERISTICS
DC Current Gain
(I = −10 mA, V = −5.0 V)
C
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC857C, BC858C
h
FE
−
−
−
90
150
270
−
−
−
−
CE
(I = −2.0 mA, V = −5.0 V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
125
220
420
180
290
520
250
475
800
C
CE
Collector−Emitter Saturation Voltage
(I = −10 mA, I = −0.5 mA)
V
V
V
V
CE(sat)
−
−
−
−
−0.3
−0.65
C
B
(I = −100 mA, I = −5.0 mA)
C
B
Base−Emitter Saturation Voltage
(I = −10 mA, I = −0.5 mA)
V
BE(sat)
−
−
−0.7
−0.9
−
−
C
B
(I = −100 mA, I = −5.0 mA)
C
B
Base−Emitter On Voltage
(I = −2.0 mA, V = −5.0 V)
V
BE(on)
−0.6
−
−
−
−0.75
−0.82
C
CE
(I = −10 mA, V = −5.0 V)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
100
−
−
−
MHz
pF
T
(I = −10 mA, V = −5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance
C
−
4.5
ob
(V = −10 V, f = 1.0 MHz)
CB
Noise Figure
NF
dB
(I = −0.2 mA, V = −5.0 Vdc, R = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
C
CE
S
BC856, BC857, BC858 Series
BC859 Series
−
−
−
−
10
4.0
http://onsemi.com
2
BC856ALT1G Series
BC857/BC858/BC859
2.0
1.5
-1.0
T = 25°C
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
A
V
= -10 V
CE
V
@ I /I = 10
C B
BE(sat)
T = 25°C
A
1.0
0.7
0.5
V
BE(on)
@ V = -10 V
CE
0.3
0.2
V
@ I /I = 10
C B
CE(sat)
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100 -200
-0.1
-1.0
-10
-100
-0.2
-0.5
-2.0
-5.0
-20
-50
I , COLLECTOR CURRENT (mAdc)
C
I , COLLECTOR CURRENT (mAdc)
C
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
1.0
1.2
1.6
2.0
2.4
2.8
-2.0
-1.6
-1.2
-0.8
-0.4
-55°C to +125°C
T = 25°C
A
I
=
-10 mA
I
C
= -50 mA
I
C
= -200 mA
= -100 mA
C
I
C
I
C
= -20 mA
0
-0.02
-0.1
-1.0
-10 -20
-0.2
-1.0
-10
-100
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 3. Collector Saturation Region
Figure 4. Base−Emitter Temperature Coefficient
10
7.0
5.0
400
300
C
ib
T = 25°C
A
200
150
V
CE
= -10 V
T = 25°C
A
100
80
C
ob
3.0
2.0
60
40
30
1.0
-0.4
20
-0.5
-0.6 -1.0
-2.0
-4.0 -6.0
-10
-20 -30 -40
-1.0
-2.0 -3.0 -5.0
-10
-20 -30 -50
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mAdc)
C
Figure 5. Capacitances
Figure 6. Current−Gain − Bandwidth Product
http://onsemi.com
3
BC856ALT1G Series
BC856
-1.0
T = 25°C
J
V
CE
= -5.0 V
-0.8
-0.6
T = 25°C
A
V
@ I /I = 10
C B
BE(sat)
2.0
1.0
0.5
V
BE
@ V = -5.0 V
CE
-0.4
-0.2
0
0.2
V
@ I /I = 10
C B
CE(sat)
-0.1 -0.2
-1.0 -2.0
-10 -20
-100 -200
-50
-0.2 -0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100 -200
-5.0
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. DC Current Gain
Figure 8. “On” Voltage
-2.0
-1.6
-1.2
-0.8
-0.4
0
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
-100 mA -200 mA
I
=
-10 mA
-20 mA
-50 mA
C
q
for V
BE
VB
-55°C to 125°C
T = 25°C
J
-0.02 -0.05 -0.1 -0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-0.2 -0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100 -200
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 9. Collector Saturation Region
Figure 10. Base−Emitter Temperature Coefficient
40
20
V
CE
= -5.0 V
500
T = 25°C
J
C
ib
200
100
50
10
8.0
6.0
4.0
C
ob
20
2.0
-0.1 -0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100
-1.0
-10
-100
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 11. Capacitance
Figure 12. Current−Gain − Bandwidth Product
http://onsemi.com
4
BC856ALT1G Series
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
SINGLE PULSE
0.05
Z
(t) = r(t) R
q q
JC JC
0.1
0.1
0.07
0.05
R
Z
= 83.3°C/W MAX
(t) = r(t) R
q
JA
q
JC
P
(pk)
SINGLE PULSE
q
JA
R
q
= 200°C/W MAX
t
1
JA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
2
0.03
0.02
DUTY CYCLE, D = t /t
1 2
READ TIME AT t
1
T
- T = P
C
R (t)
q
JC
J(pk)
(pk)
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0ꢁk
2.0ꢁk
5.0ꢁk 10ꢁk
t, TIME (ms)
Figure 13. Thermal Response
The safe operating area curves indicate I −V limits of
-200
C
CE
1 s
3 ms
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
-100
-50
T = 25°C
T = 25°C
A
J
The data of Figure 14 is based upon T
T is variable depending upon conditions. Pulse curves are
= 150°C; T or
J(pk)
C
A
valid for duty cycles to 10% provided T
≤ 150°C. T
BC558, BC559
BC557
BC556
J(pk)
J(pk)
may be calculated from the data in Figure 13. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by the secondary breakdown.
-10
-5.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-2.0
-1.0
-5.0
-10
-30 -45 -65 -100
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
http://onsemi.com
5
BC856ALT1G Series
ORDERING INFORMATION
Device
†
Marking
Package
Shipping
BC856ALT1G
SOT−23
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
(Pb−Free)
3A
BC856ALT3G
BC856BLT1G
BC856BLT3G
BC857ALT1G
BC857BLT1G
BC857BLT3G
BC857CLT1G
BC857CLT3G
BC858ALT1G
BC858BLT1G
BC858BLT3G
BC858CLT1G
BC858CLT3G
BC859BLT1G
BC859BLT3G
BC859CLT1G
BC859CLT3G
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
3B
3E
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SOT−23
(Pb−Free)
3F
SOT−23
(Pb−Free)
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
SOT−23
(Pb−Free)
3G
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
3J
3,000 / Tape & Reel
SOT−23
(Pb−Free)
3K
SOT−23
(Pb−Free)
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
SOT−23
(Pb−Free)
3L
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
4B
4C
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
6
BC856ALT1G Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
SEE VIEW C
2. CONTROLLING DIMENSION: INCH.
3
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD
318−08.
H
E
E
MILLIMETERS
INCHES
NOM
c
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
MAX
MIN
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
1
2
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
b
0.25
e
q
A
L
H
E
A1
L1
VIEW C
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
BC856ALT1/D
相关型号：
BC857BLT3
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
MOTOROLA
©2020 ICPDF网 联系我们和版权申明