NGD8201BNT4G [LITTELFUSE]

Insulated Gate Bipolar Transistor,;
NGD8201BNT4G
型号: NGD8201BNT4G
厂家: LITTELFUSE    LITTELFUSE
描述:

Insulated Gate Bipolar Transistor,

文件: 总6页 (文件大小:1403K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NGD8201B  
Ignition IGBT, 20 A, 400 V  
NChannel DPAK  
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features  
monolithic circuitry integrating ESD and Over−Voltage clamped  
protection for use in inductive coil drivers applications. Primary uses  
include Ignition, Direct Fuel Injection, or wherever high voltage and  
high current switching is required.  
Littelfuse.com  
Features  
20 AMPS, 400 VOLTS  
VCE(on) 1.8 V @  
IC = 10 A, VGE 4.5 V  
Ideal for Coil−on−Plug Applications  
DPAK Package Offers Smaller Footprint for Increased Board Space  
Gate−Emitter ESD Protection  
Temperature Compensated Gate−Collector Voltage Clamp Limits  
Stress Applied to Load  
C
Integrated ESD Diode Protection  
New Design Increases Unclamped Inductive Switching (UIS) Energy  
Per Area  
G
Low Threshold Voltage Interfaces Power Loads to Logic or  
Microprocessor Devices  
R
GE  
Low Saturation Voltage  
High Pulsed Current Capability  
E
Emitter Ballasting for ShortCircuit Capability  
These are PbFree Devices  
4
DPAK  
CASE 369C  
STYLE 7  
2
3
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Collector−Emitter Voltage  
Collector−Gate Voltage  
Gate−Emitter Voltage  
Symbol Value  
Unit  
MARKING DIAGRAM  
1
Gate  
V
V
430  
430  
18  
V
DC  
V
DC  
V
DC  
CES  
CER  
AYWW  
4
V
2
GE  
NGD  
8201BG  
Collector  
Collector  
Collector Current−Continuous  
I
C
15  
50  
A
DC  
A
AC  
@ T = 25°C − Pulsed  
C
3
ESD (Human Body Model)  
R = 1500 Ω, C = 100 pF  
ESD  
kV  
Emitter  
8.0  
NGD8201B= Device Code  
ESD (Machine Model) R = 0 Ω, C = 200 pF  
ESD  
800  
V
A
= Assemlby Location  
Y
WW  
G
= Year  
= Work Week  
= Pb−Free Device  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
115  
0.77  
Watts  
W/°C  
C
Operating and Storage Temperature Range  
T , T  
55 to  
°C  
J
stg  
+175  
ORDERING INFORMATION  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
Device  
NGD8201BNT4G  
Package  
Shipping  
2500/Tape & Reel  
DPAK  
(Pb−Free)  
Specifications subject to change without notice.  
2016 Littelfuse, Inc.  
Publication Order Number:  
September 19, 2016 - Rev. 2  
NGD8201B/D  
NGD8201B  
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ T 175°C)  
J
Characteristic  
Symbol  
Value  
Unit  
Single Pulse Collector−to−Emitter Avalanche Energy  
E
AS  
mJ  
V
CC  
V
CC  
V
CC  
= 50 V, V = 5.0 V, Pk I = 22 A, R = 1000 , L = 1.8 mH, Starting T = 25°C  
435  
433  
325  
GE  
L
G
J
= 50 V, V = 5.0 V, Pk I = 17 A, R = 1000 , L = 3.0 mH, Starting T = 25°C  
GE  
L
G
J
= 50 V, V = 5.0 V, Pk I = 19 A, R = 1000 , L = 1.8 mH, Starting T = 125°C  
GE  
L
G
J
Reverse Avalanche Energy  
= 100 V, V = 20 V, Pk I = 25.8 A, L = 6.0 mH, Starting T = 25°C  
E
AS(R)  
mJ  
V
CC  
2000  
GE  
L
J
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
1.3  
95  
°C/W  
°C/W  
°C  
θ
θ
JC  
JA  
L
DPAK (Note 1)  
R
Maximum Lead Temperature for Soldering Purposes, 1/8ʺ from case for 5 seconds  
1. When surface mounted to an FR4 board using the minimum recommended pad size.  
T
275  
ELECTRICAL CHARACTERISTICS  
Characteristic  
OFF CHARACTERISTICS  
Collector−Emitter Clamp Voltage  
Symbol  
Test Conditions  
Temperature  
Min  
Typ  
Max  
Unit  
BV  
T = −40°C to  
380  
390  
395  
405  
420  
430  
V
DC  
CES  
J
I
C
= 2.0 mA  
= 10 mA  
150°C  
T = −40°C to  
J
I
C
150°C  
T = 25°C  
1.5  
10  
0.5  
5
Zero Gate Voltage Collector Current  
I
A
DC  
J
CES  
V
V
= 350 V,  
CE  
T = 150°C  
J
30*  
2.5  
2.0  
= 0 V  
GE  
T = −40°C  
J
V
= 15 V,  
T = 25°C  
J
CE  
V
GE  
= 0 V  
T = 25°C  
0.7  
12  
0.1  
33  
36  
32  
13  
1.0  
25*  
1.0  
37  
Reverse Collector−Emitter Leakage Current  
Reverse Collector−Emitter Clamp Voltage  
I
mA  
J
ECS  
T = 150°C  
J
V
= −24 V  
CE  
T = −40°C  
J
T = 25°C  
J
27  
30  
25  
11  
B
V
V
VCES(R)  
DC  
T = 150°C  
J
40  
I
C
= −75 mA  
= 5.0 mA  
T = −40°C  
J
35  
Gate−Emitter Clamp Voltage  
Gate−Emitter Leakage Current  
Gate Emitter Resistor (Note 3)  
BV  
T = −40°C to  
15  
GES  
J
DC  
I
G
150°C  
I
T = −40°C to  
384  
10  
640  
16  
700  
26  
A
DC  
GES  
J
V
= 10 V  
GE  
150°C  
R
T = −40°C to  
k
GE  
J
150°C  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
*Maximum Value of Characteristic across Temperature Range.  
Specifications subject to change without notice. 2016 Littelfuse, Inc.  
Publication Order Number:  
September 19, 2016 - Rev. 2  
2
NGD8201B/D  
 
NGD8201B  
ELECTRICAL CHARACTERISTICS (continued)  
Characteristic  
ON CHARACTERISTICS (Note 2)  
Gate Threshold Voltage  
Symbol  
Test Conditions  
Temperature  
Min  
Typ  
Max  
Unit  
T = 25°C  
J
1.2  
0.8  
1.4  
1.5  
1.0  
1.7  
3.4  
1.8  
1.3  
2.0*  
V
GE(th)  
V
DC  
I
C
= 1.0 mA,  
T = 150°C  
J
V
GE  
= V  
CE  
T = −40°C  
J
Threshold Temperature Coefficient  
(Negative)  
mV/°C  
T = 25°C  
1.0  
1.0  
1.0  
1.2  
1.2  
1.2  
1.3  
1.3  
1.3  
1.7  
1.9  
1.5  
1.3  
1.3  
1.3  
1.2  
1.2  
1.2  
1.4  
1.4  
1.4  
1.5  
1.5  
1.6  
1.9  
2.2  
1.9  
1.5  
1.5  
1.5  
1.5  
1.5  
Collector−to−Emitter On−Voltage  
V
CE(on)  
V
DC  
J
I
V
= 6.0 A,  
C
T = 150°C  
J
= 4.0 V  
GE  
T = −40°C  
J
1.5*  
1.6*  
1.6  
T = 25°C  
J
I
C
= 8.0 A,  
T = 150°C  
J
V
= 4.0 V  
GE  
T = −40°C  
J
1.6*  
1.8  
T = 25°C  
J
I
V
= 10 A,  
C
T = 150°C  
J
1.9  
= 4.0 V  
GE  
T = −40°C  
J
1.8*  
2.3  
T = 25°C  
J
I
V
= 15 A,  
C
T = 150°C  
J
2.5*  
2.3  
= 4.0 V  
GE  
T = −40°C  
J
T = 25°C  
J
1.8*  
1.8*  
1.8*  
1.65  
I
V
= 10 A,  
C
T = 150°C  
J
= 4.5 V  
GE  
T = −40°C  
J
I
C
= 6.5 A,  
T = 25°C  
J
V
GE  
= 3.7 V  
Forward Transconductance  
gfs  
V
= 5.0 V, I = 6.0 A  
T = −40°C to  
8.0  
14  
25  
Mhos  
pF  
CE  
C
J
150°C  
DYNAMIC CHARACTERISTICS (Note 3)  
Input Capacitance  
C
400  
50  
800  
75  
1000  
100  
10  
ISS  
T = −40°C to  
V
= 25 V, V = 0 V  
J
CC  
GE  
Output Capacitance  
C
OSS  
RSS  
150°C  
f = 1.0 MHz  
Transfer Capacitance  
C
4.0  
7.0  
SWITCHING CHARACTERISTICS (Note 3)  
Turn−Off Delay Time (Resistive)  
t
V
= 300 V, I = 6.5 A  
T = 25°C  
4.0  
9.0  
0.7  
4.5  
10  
15  
Sec  
Sec  
d(off)  
CC  
C
J
R
G
= 1.0 kΩ, R = 46 Ω,  
L
Fall Time (Resistive)  
Turn−On Delay Time  
Rise Time  
t
f
V
CC  
= 300 V, I = 6.5 A  
T = 25°C  
J
C
R
= 1.0 kΩ, R = 46 Ω,  
G
G
G
L
t
V
R
= 10 V, I = 6.5 A  
T = 25°C  
J
4.0  
7.0  
d(on)  
CC  
C
= 1.0 kΩ, R = 1.5 Ω  
L
t
r
V
R
= 10 V, I = 6.5 A  
T = 25°C  
J
CC  
C
= 1.0 kΩ, R = 1.5 Ω  
L
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
*Maximum Value of Characteristic across Temperature Range.  
2. Pulse Test: Pulse Width  
3. Not production tested.  
300 S, Duty Cycle  
2%.  
Specifications subject to change without notice. 2016 Littelfuse, Inc.  
Publication Order Number:  
September 19, 2016 - Rev. 2  
3
NGD8201B/D  
 
NGD8201B  
TYPICAL ELECTRICAL CHARACTERISTICS  
100  
10  
1
60  
V
CE  
= 10 V  
50  
40  
30  
20  
10  
0
25°C  
−40°C  
25°C  
150°C  
150°C  
1
10  
1
2
3
4
5
INDUCTANCE (mH)  
V
GE  
, GATE TO EMITTER VOLTAGE (V)  
Figure 1. Maximum Single Pulse Switch Off  
Current vs. Inductance  
Figure 2. Transfer Characteristics  
60  
50  
40  
30  
20  
10  
0
60  
50  
40  
30  
20  
10  
0
V
= 10 V  
GE  
V
= 10 V  
GE  
6 V  
6 V  
5 V  
4.5 V  
4 V  
5 V  
4.5 V  
4 V  
3.5 V  
3.5 V  
3 V  
3 V  
2.5 V  
9
2.5 V  
0
1
2
3
4
5
6
7
8
10  
0
1
2
3
4
5
6
7
8
9
10  
V
CE  
, COLLECTOR TO EMITTER VOLTAGE (V)  
V
CE  
, COLLECTOR TO EMITTER VOLTAGE (V)  
Figure 3. Output Characteristics, TJ = 25 C  
Figure 4. On−Region Characteristics,  
TJ = 150 C  
60  
V
GE  
= 10 V  
6 V  
5 V  
4.5 V  
4 V  
50  
40  
30  
20  
10  
0
3.5 V  
3 V  
2.5 V  
0
1
2
3
4
5
6
7
8
9
10  
V
CE  
, COLLECTOR TO EMITTER VOLTAGE (V)  
Figure 5. On−Region Characteristics,  
TJ = −40 C  
Specifications subject to change without notice. 2016 Littelfuse, Inc.  
Publication Order Number:  
September 19, 2016 - Rev. 2  
4
NGD8201B/D  
NGD8201B  
1000  
100  
10  
Duty Cycle = 0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
1
0.1  
D CURVES APPLY FOR POWER  
PULSE TRAIN SHOWN  
Single Pulse  
P
(pk)  
READ TIME AT t  
1
t
1
0.01  
t
2
T
J(pk)  
T = P  
R
(t)  
JA  
A
(pk)  
R
R(t) for t 0.2 s  
JC  
DUTY CYCLE, D = t /t  
1
2
0.001  
0.000001  
0.00001  
0.0001  
0.001  
0.01  
t,TIME (S)  
0.1  
1
10  
100  
1000  
Figure 6. Transient Thermal Resistance (Non−normalized Junction−to−Ambient mounted on minimum pad area)  
Specifications subject to change without notice. 2016 Littelfuse, Inc.  
Publication Order Number:  
September 19, 2016 - Rev. 2  
5
NGD8201B/D  
NGD8201B  
PACKAGE DIMENSIONS  
DPAK  
CASE 369C  
ISSUE E  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ASME  
Y14.5M, 1994.  
2. CONTROLLING DIMENSION: INCHES.  
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-  
MENSIONS b3, L3 and Z.  
A
D
E
C
A
b3  
B
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD  
FLASH, PROTRUSIONS, OR BURRS. MOLD  
FLASH, PROTRUSIONS, OR GATE BURRS SHALL  
NOT EXCEED 0.006 INCHES PER SIDE.  
5. DIMENSIONS D AND E ARE DETERMINED AT THE  
OUTERMOST EXTREMES OF THE PLASTIC BODY.  
6. DATUMS A AND B ARE DETERMINED AT DATUM  
PLANE H.  
c2  
4
2
L3  
L4  
Z
Z
DETAIL A  
H
1
3
7. OPTIONAL MOLD FEATURE.  
INCHES  
DIM MIN MAX  
0.086 0.094  
A1 0.000 0.005  
0.025 0.035  
MILLIMETERS  
NOTE 7  
MIN  
2.18  
0.00  
0.63  
0.72  
4.57  
0.46  
0.46  
5.97  
6.35  
MAX  
2.38  
0.13  
0.89  
1.14  
5.46  
0.61  
0.61  
6.22  
6.73  
c
b2  
e
BOTTOM VIEW  
BOTTOM VIEW  
A
ALTERNATE  
SIDE VIEW  
CONSTRUCTION  
b
b
b2 0.028 0.045  
b3 0.180 0.215  
M
0.005 (0.13)  
C
H
TOP VIEW  
c
0.018 0.024  
GAUGE  
PLANE  
SEATING  
PLANE  
c2 0.018 0.024  
L2  
C
D
E
e
0.235 0.245  
0.250 0.265  
0.090 BSC  
2.29 BSC  
9.40 10.41  
1.40 1.78  
2.90 REF  
0.51 BSC  
0.89 1.27  
H
L
L1  
L2  
0.370 0.410  
0.055 0.070  
0.114 REF  
L
A1  
L1  
0.020 BSC  
DETAIL A  
L3 0.035 0.050  
ROTATED 90 CW  
L4  
Z
−−− 0.040  
0.155 −−−  
−−−  
1.01  
3.93  
−−−  
STYLE 7:  
SOLDERING FOOTPRINT  
PIN 1. GATE  
2. COLLECTOR  
3. EMITTER  
6.20  
3.00  
4. COLLECTOR  
0.244  
0.118  
2.58  
0.102  
5.80  
0.228  
1.60  
0.063  
6.17  
0.243  
mm  
inches  
SCALE 3:1  
Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military,  
aerospace, medical, life-saving, life-sustaining, nuclear facility applications, devices intended for surgical implant into the body, or any  
other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property  
damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be  
deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be  
liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in  
applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale,  
unless otherwise agreed by Littelfuse.  
Littelfuse.com  
Specifications subject to change without notice. 2016 Littelfuse, Inc.  
Publication Order Number:  
September 19, 2016 - Rev. 2  
6
NGD8201B/D  

相关型号:

NGD8201N

Ignition IGBT
ONSEMI

NGD8201NT4

Ignition IGBT
ONSEMI

NGD8201NT4G

Ignition IGBT
ONSEMI

NGD8205ANT4G

Ignition IGBT, N-Channel, 20 A, 350 V, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
ONSEMI

NGD8205N

Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK
ONSEMI

NGD8205NT4

Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK
ONSEMI

NGD8205NT4G

Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK
ONSEMI

NGD8205N_12

Ignition IGBT 20 Amp, 350 Volt, N.Channel DPAK
ONSEMI

NGFL0402AG1R710G100TRF

Multilayer Chip Low Pass Filters
NIC

NGFL0402BG2R450G050TRF

Multilayer Chip Low Pass Filters
NIC

NGFL0603AG2R450G050TRF

Low Pass Filter, 2450MHz, EIA STD PACKAGE SIZE 0603, 4 PIN
NICHICON

NGFL0603BG2R450G200TRF

Multilayer Chip Low Pass Filters
NIC