NGD8201NT4G [ONSEMI]
Ignition IGBT; 点火IGBT
| 型号： | NGD8201NT4G |
| 厂家： | 
ONSEMI |
| 描述： | Ignition IGBT |
| 文件： | 总7页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGD8201N
Ignition IGBT
20 Amp, 400 Volt, N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
http://onsemi.com
20 A, 400 V
VCE(on) = 1.3 V @
IC = 10 A, VGE . 4.5 V
Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• DPAK Package Offers Smaller Footprint for Increased Board Space
• Gate−Emitter ESD Protection
C
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
R
G
G
• Integrated ESD Diode Protection
• Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
R
GE
• Low Saturation Voltage
E
• High Pulsed Current Capability
• Optional Gate Resistor (R ) and Gate−Emitter Resistor (R
• Pb−Free Package is Available
)
GE
G
1
Applications
• Ignition Systems
DPAK
CASE 369C
STYLE 7
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Symbol
Value
440
Unit
MARKING DIAGRAM
V
CES
V
CER
V
V
V
440
1
G
V
GE
"15
YWW
NGD
8201NG
C
C
Collector Current−Continuous
I
C
20
50
A
DC
AC
@ T = 25°C − Pulsed
A
C
E
Continuous Gate Current
I
I
1.0
mA
G
Transient Gate Current
(t ≤ 2 ms, f ≤ 100 Hz)
Y
= Year
G
20
mA
kV
WW
NGD8201N = Device Code
= Pb−Free Package
= Work Week
ESD (Charged−Device Model)
ESD
ESD
2.0
G
ESD (Human Body Model)
R = 1500 W, C = 100 pF
8.0
kV
V
ORDERING INFORMATION
ESD (Machine Model) R = 0 W, C = 200 pF
ESD
500
†
Device
Package
Shipping
Total Power Dissipation @ T = 25°C
P
125
W
C
D
NGD8201NT4
DPAK
2500 / Tape & Reel
2500 / Tape & Reel
Derate above 25°C
0.83
W/°C
NGD8201NT4G
DPAK
(Pb−Free)
Operating & Storage Temperature Range
T , T
J
−55 to +175
°C
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
August, 2006 − Rev. 7
NGD8201N/D
NGD8201N
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ T ≤ 175°C)
J
Characteristic
Single Pulse Collector−to−Emitter Avalanche Energy
Symbol
Value
Unit
E
AS
mJ
V
CC
V
CC
V
CC
= 50 V, V = 5.0 V, Pk I = 16.7 A, R = 1000 W, L = 1.8 mH, Starting T = 25°C
250
200
180
GE
GE
L
L
L
G
G
G
J
= 50 V, V = 5.0 V, Pk I = 14.9 A, R = 1000 W, L = 1.8 mH, Starting T = 150°C
J
J
= 50 V, V = 5.0 V, Pk I = 14.1 A, R = 1000 W, L = 1.8 mH, Starting T = 175°C
GE
Reverse Avalanche Energy
= 100 V, V = 20 V, Pk I = 25.8 A, L = 6.0 mH, Starting T = 25°C
E
AS(R)
mJ
V
CC
2000
GE
L
J
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
R
1.2
95
°C/W
°C/W
°C
q
q
JC
JA
L
Thermal Resistance, Junction−to−Ambient (Note 1)
R
Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2)
T
275
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
BV
I
= 2.0 mA
= 10 mA
T = −40°C to 175°C
370
390
395
415
0.1
1.5
25
420
440
1.0
10
V
CES
C
J
I
T = −40°C to 175°C
C
J
Zero Gate Voltage Collector Current
I
V
= 0 V, V = 15 V
T = 25°C
J
mA
mA
CES
GE
CE
T = 25°C
J
0.5
1.0
0.4
30
V
= 200 V,
GE
CE
T = 175°C
J
100*
5.0
39
V
= 0 V
T = −40°C
J
0.8
35
Reverse Collector−Emitter Clamp
Voltage
B
T = 25°C
J
V
VCES(R)
T = 175°C
J
35
39
45*
37
I
= −75 mA
= −24 V
C
T = −40°C
J
30
33
Reverse Collector−Emitter Leakage
Current
I
T = 25°C
J
0.05
1.0
0.005
12
0.1
5.0
0.5
10*
0.1
14
mA
CES(R)
T = 175°C
J
V
CE
T = −40°C
J
0.01
12.5
300
70
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
Gate Resistor (Optional)
BV
I
G
= "5.0 mA
T = −40°C to 175°C
V
mA
W
GES
J
I
V
GE
= "5.0 V
T = −40°C to 175°C
200
350*
GES
J
R
T = −40°C to 175°C
J
G
Gate−Emitter Resistor
R
T = −40°C to 175°C 14.25
J
16
25
kW
GE
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
GE(th)
T = 25°C
1.5
0.7
1.7
4.0
1.8
1.0
2.0
4.6
2.1
1.3
V
J
T = 175°C
J
I
C
= 1.0 mA, V = V
GE CE
T = −40°C
J
2.3*
5.2
Threshold Temperature Coefficient
(Negative)
mV/°C
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
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2
NGD8201N
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 4)
Collector−to−Emitter On−Voltage
V
T = 25°C
0.95
0.7
1.0
0.95
0.8
1.1
0.85
0.7
1.0
1.0
0.8
1.1
1.15
1.0
1.25
1.3
1.2
1.4
10
1.15
0.95
1.3
1.35
1.15
1.40
1.45
1.25
1.5
V
CE(on)
J
T = 175°C
J
I
I
I
= 6.5 A, V = 3.7 V
C
C
C
GE
T = −40°C
J
T = 25°C
J
1.25
1.05
1.4
T = 175°C
J
= 9.0 A, V = 3.9 V
GE
T = −40°C
J
T = 25°C
J
1.15
0.95
1.3
1.4
T = 175°C
J
1.2
= 7.5 A, V = 4.5 V
GE
T = −40°C
J
1.6*
1.6
T = 25°C
J
1.3
T = 175°C
J
1.05
1.4
1.4
I
= 10 A, V = 4.5 V
C
C
C
GE
T = −40°C
J
1.7*
1.7
T = 25°C
J
1.45
1.3
T = 175°C
J
1.55
1.8*
1.9
I
= 15 A, V = 4.5 V
GE
T = −40°C
J
1.55
1.6
T = 25°C
J
T = 175°C
J
1.5
1.8
I
= 20 A, V = 4.5 V
GE
T = −40°C
J
1.75
18
2.0*
25
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
gfs
I
= 6.0 A, V = 5.0 V
T = 25°C
J
Mhos
pF
C
CE
C
1100
70
1300
80
1500
90
ISS
Output Capacitance
C
C
f = 10 kHz, V = 25 V
T = 25°C
J
OSS
RSS
CE
Transfer Capacitance
18
20
22
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Resistive)
t
t
t
T = 25°C
6.0
6.0
4.0
8.0
3.0
5.0
1.5
5.0
1.0
1.0
4.0
3.0
8.0
8.0
6.0
10.5
5.0
7.0
3.0
7.0
1.5
1.5
6.0
5.0
10
10
mSec
d(off)
J
V
G
= 300 V, I = 9.0 A
C
T = 175°C
J
CC
R
= 1.0 kW, R = 33 W,
L
Fall Time (Resistive)
Turn−Off Delay Time (Inductive)
Fall Time (Inductive)
Turn−On Delay Time
Rise Time
t
f
T = 25°C
J
8.0
14
V
GE
= 5.0 V
T = 175°C
J
T = 25°C
J
7.0
9.0
4.5
10
d(off)
V
CC
= 300 V, I = 9.0 A
C
T = 175°C
J
R
= 1.0 kW,
G
t
f
T = 25°C
J
L = 300 mH, V = 5.0 V
GE
T = 175°C
J
T = 25°C
J
2.0
2.0
8.0
7.0
d(on)
V
= 14 V, I = 9.0 A
C
T = 175°C
J
CC
R
= 1.0 kW, R = 1.5 W,
G
L
t
r
T = 25°C
J
V
GE
= 5.0 V
T = 175°C
J
*Maximum Value of Characteristic across Temperature Range.
4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
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3
NGD8201N
TYPICAL ELECTRICAL CHARACTERISTICS
400
350
300
250
200
150
100
50
30
25
V
V
R
= 14 V
= 5.0 V
= 1000 W
CC
T = 25°C
J
GE
G
L = 1.8 mH
20
15
10
5
T = 175°C
J
L = 3.0 mH
L = 10 mH
V
V
R
= 14 V
= 5.0 V
= 1000 W
CC
GE
G
0
0
0
2
6
8
10
−50 −25
0
25
50
75 100
150 175
125
4
INDUCTOR (mH)
T , JUNCTION TEMPERATURE (°C)
J
Figure 1. Self Clamped Inductive Switching
Figure 2. Open Secondary Avalanche Current
vs. Temperature
60
50
40
30
20
10
0
2.0
V
= 10 V
4.5 V
4 V
GE
I
= 25 A
C
1.75
5 V
I
C
I
C
I
C
= 20 A
= 15 A
= 10 A
1.5
1.25
1.0
T = 175°C
J
3.5 V
I
= 7.5 A
C
3 V
0.75
0.5
2.5 V
0.25
V
GE
= 4.5 V
0.0
0
1
2
3
4
5
6
7
8
−50 −25
0
25
50
75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 3. Collector−to−Emitter Voltage vs.
Figure 4. Collector Current vs.
Junction Temperature
Collector−to−Emitter Voltage
60
50
40
30
20
10
0
60
50
40
30
20
10
0
V
= 10 V
V
= 10 V
4.5 V
4.5 V
GE
GE
4 V
4 V
5 V
5 V
T = 25°C
3.5 V
3 V
T = −40°C
J
J
3.5 V
3 V
2.5 V
7
2.5 V
0
1
2
3
4
5
6
8
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector Current vs.
Figure 6. Collector Current vs.
Collector−to−Emitter Voltage
Collector−to−Emitter Voltage
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4
NGD8201N
TYPICAL ELECTRICAL CHARACTERISTICS
10000
45
40
35
30
25
20
15
10
5
V
CE
= 5 V
1000
V
CE
= −24 V
100
10
T = 25°C
J
V
CE
= 200 V
1.0
0.1
T = 175°C
J
T = −40°C
J
0
−50 −25
0
25
50
75 100 125 150 175
0
0.5
1
1.5
2
2.5
3
3.5
4
V
GE
, GATE TO EMITTER VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Transfer Characteristics
Figure 8. Collector−to−Emitter Leakage
Current vs. Temperature
10000
1000
100
2.50
2.25
2.00
1.75
1.50
Mean
C
iss
Mean + 4 s
C
oss
C
rss
Mean − 4 s
1.25
1.00
0.75
0.50
10
1.0
0.1
0.25
0
−50 −25
0
25
50
75 100 125 150 175
0
5
10
15
20
25
T , JUNCTION TEMPERATURE (°C)
J
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 9. Gate Threshold Voltage vs.
Temperature
Figure 10. Capacitance vs.
Collector−to−Emitter Voltage
12
10
8
12
10
8
V
V
R
= 300 V
= 5.0 V
= 1000 W
CC
GE
t
fall
G
I
C
= 9.0 A
L = 300 mH
t
delay
t
delay
6
4
2
0
6
4
2
0
V
V
R
= 300 V
= 5.0 V
= 1000 W
CC
t
fall
GE
G
I
C
= 9.0 A
R = 33 W
L
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 11. Resistive Switching Fall Time vs.
Temperature
Figure 12. Inductive Switching Fall Time vs.
Temperature
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5
NGD8201N
100
Duty Cycle = 0.5
0.2
0.1
0.05
10
1
0.02
0.01
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
P
(pk)
READ TIME AT t
1
t
1
0.1
0.01
t
2
Single Pulse
T
J(pk)
− T = P
R
q
(t)
JA
A
(pk)
For D=1: R
X R(t) for t ≤ 0.1 s
q
JC
DUTY CYCLE, D = t /t
1
2
0.000001
0.00001
0.0001
0.001
0.01
t,TIME (S)
0.1
1
10
100
1000
Figure 13. Minimum Pad Transient Thermal Resistance
(Non−normalized Junction−to−Ambient)
10
1
Duty Cycle = 0.5
0.2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
P
(pk)
0.1
READ TIME AT t
0.1
0.05
1
t
1
0.02
t
2
T
J(pk)
− T = P
R
q
(t)
JC
A
(pk)
DUTY CYCLE, D = t /t
0.01
1
2
Single Pulse
0.00001
0.01
0.000001
0.0001
0.001
0.01
0.1
1
10
t,TIME (S)
Figure 14. Best Case Transient Thermal Resistance
(Non−normalized Junction−to−Case Mounted on Cold Plate)
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6
NGD8201N
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
NOTES:
SEATING
PLANE
−T−
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
C
2. CONTROLLING DIMENSION: INCH.
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.22
6.73
2.38
0.88
0.58
1.14
A
B
C
D
E
F
G
H
J
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
4
2
Z
A
K
S
1
3
4.58 BSC
U
0.87
0.46
2.60
1.01
0.58
2.89
K
L
2.29 BSC
F
J
R
S
U
V
Z
0.180 0.215
0.025 0.040
4.57
0.63
0.51
0.89
3.93
5.45
1.01
−−−
1.27
−−−
L
H
0.020
0.035 0.050
0.155 −−−
−−−
D 2 PL
M
G
0.13 (0.005)
T
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NGD8201N/D
相关型号：
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