NGD8201N [ONSEMI]
Ignition IGBT; 点火IGBT型号: | NGD8201N |
厂家: | ONSEMI |
描述: | Ignition IGBT |
文件: | 总8页 (文件大小:111K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NGD8201N
Ignition IGBT
20 A, 400 V, N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
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20 Amps
400 Volts
VCE(on) = 1.3 V @
IC = 10 A, VGE . 4.5 V
Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• DPAK Package Offers Smaller Footprint for Increased Board Space
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
C
Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
R
G
G
• Low Saturation Voltage
R
GE
• High Pulsed Current Capability
• Optional Gate Resistor (R ) and Gate−Emitter Resistor (R
)
G
GE
E
Applications
• Ignition Systems
MARKING
DIAGRAM
4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
YWW
NGD
8201N
2
1
Rating
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Symbol
Value
440
Unit
V
3
V
CES
V
CER
DPAK
CASE 369C
STYLE 7
440
V
NGD8201N= Device Code
V
"15
V
GE
Y
= Year
WW
= Work Week
Collector Current−Continuous
I
20
50
A
DC
A
AC
C
@ T = 25°C − Pulsed
C
ORDERING INFORMATION
Continuous Gate Current
I
I
1.0
20
mA
mA
G
G
†
Device
NGD8201NT4
Package
Shipping
Transient Gate Current (t ≤ 2 ms,
f ≤ 100 Hz)
DPAK
2500 / Tape & Reel
ESD (Charged−Device Model)
ESD
ESD
2.0
kV
kV
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
ESD (Human Body Model)
R = 1500 W, C = 100 pF
8.0
ESD (Machine Model) R = 0 W, C = 200 pF
ESD
500
V
Total Power Dissipation @ T = 25°C
P
125
0.83
W
W/°C
C
D
Derate above 25°C
Operating & Storage Temperature Range
T , T
−55 to +175
°C
J
stg
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
January, 2005 − Rev. 4
NGD8201N/D
NGD8201N
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ T ≤ 175°C)
J
Characteristic
Symbol
Value
Unit
Single Pulse Collector−to−Emitter Avalanche Energy
E
mJ
AS
V
V
V
= 50 V, V = 5.0 V, Pk I = 16.7 A, R = 1000 W, L = 1.8 mH, Starting T = 25°C
250
200
180
CC
CC
CC
GE
GE
L
L
L
G
G
G
J
= 50 V, V = 5.0 V, Pk I = 14.9 A, R = 1000 W, L = 1.8 mH, Starting T = 150°C
J
J
= 50 V, V = 5.0 V, Pk I = 14.1 A, R = 1000 W, L = 1.8 mH, Starting T = 175°C
GE
Reverse Avalanche Energy
= 100 V, V = 20 V, Pk I = 25.8 A, L = 6.0 mH, Starting T = 25°C
E
mJ
AS(R)
V
2000
CC
GE
L
J
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
R
1.2
95
°C/W
°C/W
°C
q
JC
JA
L
Thermal Resistance, Junction−to−Ambient (Note 1)
R
q
Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2)
T
275
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
BV
I
= 2.0 mA
= 10 mA
T = −40°C to 175°C
370
390
395
415
0.1
420
440
1.0
V
CES
C
J
I
T = −40°C to 175°C
C
J
Zero Gate Voltage Collector Current
I
V
CE
= 0 V,
= 15 V
T = 25°C
J
mA
mA
CES
GE
V
T = 25°C
J
0.5
1.0
0.4
30
1.5
25
10
100*
5.0
39
V
= 200 V,
GE
CE
T = 175°C
J
V
= 0 V
T = −40°C
J
0.8
35
Reverse Collector−Emitter Clamp
Voltage
B
T = 25°C
J
V
VCES(R)
T = 175°C
J
35
39
45*
37
I
= −75 mA
= −24 V
C
T = −40°C
J
30
33
Reverse Collector−Emitter Leakage
Current
I
T = 25°C
J
0.05
1.0
0.005
12
0.1
5.0
0.01
12.5
300
70
0.5
10*
0.1
14
mA
CES(R)
T = 175°C
J
V
CE
T = −40°C
J
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
Gate Resistor (Optional)
BV
I
= "5.0 mA
T = −40°C to 175°C
V
mA
W
GES
G
J
I
V
= "5.0 V
T = −40°C to 175°C
200
350*
GES
GE
J
R
G
T = −40°C to 175°C
J
Gate−Emitter Resistor
R
GE
T = −40°C to 175°C 14.25
J
16
25
kW
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
T = 25°C
1.5
0.7
1.7
4.0
1.8
1.0
2.0
4.6
2.1
1.3
V
GE(th)
J
I
= 1.0 mA,
C
V
T = 175°C
J
= V
GE
CE
T = −40°C
J
2.3*
5.2
Threshold Temperature Coefficient
(Negative)
mV/°C
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
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2
NGD8201N
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 4)
Collector−to−Emitter On−Voltage
V
T = 25°C
0.95
0.7
1.0
0.95
0.8
1.1
0.85
0.7
1.0
1.0
0.8
1.1
1.15
1.0
1.25
1.3
1.2
1.4
10
1.15
0.95
1.3
1.35
1.15
1.40
1.45
1.25
1.5
V
CE(on)
J
I
= 6.5 A,
GE
C
T = 175°C
J
V
= 3.7 V
T = −40°C
J
T = 25°C
J
1.25
1.05
1.4
I
V
= 9.0 A,
C
T = 175°C
J
= 3.9 V
GE
T = −40°C
J
T = 25°C
J
1.15
0.95
1.3
1.4
I
V
= 7.5 A,
C
T = 175°C
J
1.2
= 4.5 V
GE
T = −40°C
J
1.6*
1.6
T = 25°C
J
1.3
I
V
= 10 A,
C
T = 175°C
J
1.05
1.4
1.4
= 4.5 V
GE
T = −40°C
J
1.7*
1.7
T = 25°C
J
1.45
1.3
I
V
= 15 A,
C
T = 175°C
J
1.55
1.8*
1.9
= 4.5 V
GE
T = −40°C
J
1.55
1.6
T = 25°C
J
I
V
= 20 A,
C
T = 175°C
J
1.5
1.8
= 4.5 V
GE
T = −40°C
J
1.75
18
2.0*
25
Forward Transconductance
gfs
I
V
= 6.0 A,
T = 25°C
J
Mhos
pF
C
= 5.0 V
CE
DYNAMIC CHARACTERISTICS
Input Capacitance
C
1100
70
1300
80
1500
90
ISS
Output Capacitance
C
f = 10 kHz, V = 25 V
T = 25°C
J
OSS
RSS
CE
Transfer Capacitance
C
18
20
22
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Resistive)
t
t
t
T = 25°C
6.0
6.0
4.0
8.0
3.0
5.0
1.5
5.0
1.0
1.0
4.0
3.0
8.0
8.0
6.0
10.5
5.0
7.0
3.0
7.0
1.5
1.5
6.0
5.0
10
10
mSec
d(off)
J
V
G
= 300 V, I = 9.0 A
C
T = 175°C
J
CC
R
= 1.0 kW, R = 33 W,
L
Fall Time (Resistive)
Turn−Off Delay Time (Inductive)
Fall Time (Inductive)
Turn−On Delay Time
Rise Time
t
T = 25°C
J
8.0
14
f
V
= 5.0 V
GE
T = 175°C
J
T = 25°C
J
7.0
9.0
4.5
10
d(off)
V
= 300 V, I = 9.0 A
C
T = 175°C
J
CC
R
G
= 1.0 kW,
t
T = 25°C
J
f
L = 300 mH, V = 5.0 V
GE
T = 175°C
J
T = 25°C
J
2.0
2.0
8.0
7.0
d(on)
V
= 14 V, I = 9.0 A
C
T = 175°C
J
CC
R
G
= 1.0 kW, R = 1.5 W,
L
t
T = 25°C
J
r
V
= 5.0 V
GE
T = 175°C
J
*Maximum Value of Characteristic across Temperature Range.
4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
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3
NGD8201N
TYPICAL ELECTRICAL CHARACTERISTICS
400
350
300
250
200
150
100
50
30
25
V
V
R
= 14 V
= 5.0 V
= 1000 W
CC
GE
T = 25°C
J
G
L = 1.8 mH
20
15
10
5
T = 175°C
J
L = 3.0 mH
L = 10 mH
V
V
R
= 14 V
= 5.0 V
= 1000 W
CC
GE
G
0
0
0
2
6
8
10
−50 −25
0
25
50
75 100
150 175
125
4
INDUCTOR (mH)
T , JUNCTION TEMPERATURE (°C)
J
Figure 1. Self Clamped Inductive Switching
Figure 2. Open Secondary Avalanche Current
vs. Temperature
2.0
60
50
40
30
20
10
0
V
= 10 V
4.5 V
4 V
GE
I
= 25 A
C
1.75
5 V
I
I
I
= 20 A
= 15 A
= 10 A
C
C
C
1.5
1.25
1.0
T = 175°C
J
3.5 V
I
= 7.5 A
C
3 V
0.75
0.5
2.5 V
0.25
V
= 4.5 V
GE
0.0
0
1
2
3
4
5
6
7
8
−50 −25
0
25
50
75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
Figure 3. Collector−to−Emitter Voltage vs.
Figure 4. Collector Current vs.
Junction Temperature
Collector−to−Emitter Voltage
60
50
40
30
20
10
0
60
50
40
30
20
10
0
V
= 10 V
V
= 10 V
GE
4.5 V
4.5 V
GE
4 V
4 V
5 V
5 V
T = 25°C
3.5 V
3 V
T = −40°C
J
J
3.5 V
3 V
2.5 V
7
2.5 V
0
1
2
3
4
5
6
8
0
1
2
3
4
5
6
7
8
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
Figure 5. Collector Current vs.
Figure 6. Collector Current vs.
Collector−to−Emitter Voltage
Collector−to−Emitter Voltage
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4
NGD8201N
TYPICAL ELECTRICAL CHARACTERISTICS
10000
45
40
35
30
25
20
15
10
5
V
= 5 V
CE
1000
V
= −24 V
CE
100
10
T = 25°C
J
V
= 200 V
CE
1.0
0.1
T = 175°C
J
T = −40°C
J
0
−50 −25
0
25
50
75 100 125 150 175
0
0.5
1
1.5
2
2.5
3
3.5
4
V
, GATE TO EMITTER VOLTAGE (V)
GE
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Transfer Characteristics
Figure 8. Collector−to−Emitter Leakage
Current vs. Temperature
10000
1000
100
2.50
2.25
2.00
1.75
1.50
Mean
C
iss
Mean + 4 s
C
oss
C
rss
Mean − 4 s
1.25
1.00
0.75
0.50
10
1.0
0.1
0.25
0
−50 −25
0
25
50
75 100 125 150 175
0
5
10
15
20
25
T , JUNCTION TEMPERATURE (°C)
J
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
Figure 9. Gate Threshold Voltage vs.
Temperature
Figure 10. Capacitance vs.
Collector−to−Emitter Voltage
12
10
8
12
10
8
V
V
R
= 300 V
= 5.0 V
= 1000 W
CC
GE
t
fall
G
I
= 9.0 A
C
L = 300 mH
t
delay
t
delay
6
4
2
0
6
4
2
0
V
V
R
= 300 V
= 5.0 V
= 1000 W
CC
GE
t
fall
G
I
= 9.0 A
C
R = 33 W
L
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 11. Resistive Switching Fall Time vs.
Temperature
Figure 12. Inductive Switching Fall Time vs.
Temperature
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5
NGD8201N
100
Duty Cycle = 0.5
0.2
0.1
0.05
10
1
0.02
0.01
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
P
(pk)
READ TIME AT t
1
t
1
0.1
0.01
t
Single Pulse
T
− T = P
R
q
(t)
JA
2
J(pk)
A
(pk)
For D=1: R
X R(t) for t ≤ 0.1 s
q
JC
DUTY CYCLE, D = t /t
1
2
0.000001
0.00001
0.0001
0.001
0.01
t,TIME (S)
0.1
1
10
100
1000
Figure 13. Minimum Pad Transient Thermal Resistance
(Non−normalized Junction−to−Ambient)
10
1
Duty Cycle = 0.5
0.2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
P
(pk)
0.1
READ TIME AT t
0.1
0.05
1
t
1
0.02
t
T
− T = P
R (t)
q
JC
2
J(pk)
A
(pk)
DUTY CYCLE, D = t /t
0.01
1
2
Single Pulse
0.00001
0.01
0.000001
0.0001
0.001
0.01
0.1
1
10
t,TIME (S)
Figure 14. Best Case Transient Thermal Resistance
(Non−normalized Junction−to−Case Mounted on Cold Plate)
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6
NGD8201N
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
SEATING
PLANE
−T−
2. CONTROLLING DIMENSION: INCH.
C
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.22
6.73
2.38
0.88
0.58
1.14
A
B
C
D
E
F
G
H
J
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
4
2
Z
A
K
S
1
3
4.58 BSC
U
0.87
0.46
2.60
1.01
0.58
2.89
K
L
2.29 BSC
F
J
R
S
U
V
Z
0.180 0.215
0.025 0.040
4.57
0.63
0.51
0.89
3.93
5.45
1.01
−−−
1.27
−−−
STYLE 7:
PIN 1. GATE
L
H
0.020
0.035 0.050
0.155 −−−
−−−
2. COLLECTOR
3. EMITTER
D 2 PL
4. COLLECTOR
M
G
0.13 (0.005)
T
SOLDERING FOOTPRINT
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
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7
NGD8201N
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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NGD8201N/D
相关型号:
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