IXFH30N60X [LITTELFUSE]
Power Field-Effect Transistor,;型号: | IXFH30N60X |
厂家: | LITTELFUSE |
描述: | Power Field-Effect Transistor, |
文件: | 总7页 (文件大小:236K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Preliminary Technical Information
X-Class HiPerFETTM
Power MOSFET
VDSS = 600V
ID25 = 30A
RDS(on) 155m
IXFT30N60X
IXFQ30N60X
IXFH30N60X
TO-268 (IXFT)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
G
S
D (Tab)
TO-3P (IXFQ)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25C to 150C
600
600
V
V
G
D
VDGR
TJ = 25C to 150C, RGS = 1M
S
VGSS
VGSM
Continuous
Transient
30
40
V
V
D (Tab)
TO-247 (IXFH)
ID25
IDM
TC = 25C
30
60
A
A
TC = 25C, Pulse Width Limited by TJM
IA
TC = 25C
TC = 25C
10
1
A
J
EAS
G
D
dv/dt
PD
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
50
V/ns
W
S
D (Tab)
D = Drain
500
G = Gate
S = Source
TJ
-55 ... +150
150
C
C
C
Tab = Drain
TJM
Tstg
-55 ... +150
Features
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
Md
Mounting Torque (TO-247 & TO-3P)
1.13 / 10
Nm/lb.in
Weight
TO-268
TO-3P
TO-247
4.0
5.5
6.0
g
g
g
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 4mA
VGS = 30V, VDS = 0V
VDS = VDSS, VGS = 0V
600
V
V
2.5
4.5
Applications
100 nA
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
IDSS
25 A
750 A
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
155 m
DS100658A(5/15)
© 2015 IXYS CORPORATION, All Rights Reserved
IXFT30N60X IXFQ30N60X
IXFH30N60X
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Gate Input Resistance
10
17
S
RGi
2.6
Ciss
Coss
Crss
2270
1610
14
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
Effective Output Capacitance
Co(er)
Co(tr)
120
375
pF
pF
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
td(on)
tr
td(off)
tf
21
43
58
33
ns
ns
ns
ns
Resistive Switching Times
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
V
RG = 5 (External)
Qg(on)
Qgs
56
12
28
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCS
0.25 C/W
C/W
TO-247 & TO-3P
0.25
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V
30
A
A
ISM
VSD
Repetitive, pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
120
1.4
V
trr
QRM
IRM
145
860
12
ns
IF = 15A, -di/dt = 100A/μs
nC
VR = 100V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXFT30N60X IXFQ30N60X
IXFH30N60X
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
30
25
20
15
10
5
70
60
50
40
30
20
10
0
V
= 10V
9V
GS
V
= 10V
GS
8V
7V
9V
8V
6V
5V
7V
6V
15
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
5
10
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 15A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
30
25
20
15
10
5
3.8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
V
= 10V
GS
V
= 10V
GS
9V
8V
I
= 30A
D
7V
6V
I
= 15A
D
5V
4V
0
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
12
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 15A Value vs.
Drain Current
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
= 10V
GS
BV
DSS
T = 125ºC
J
T = 25ºC
J
V
GS(th)
0
10
20
30
40
50
60
70
-60
-40
-20
0
20
40
60
80
100
120
140
160
TJ - Degrees Centigrade
ID - Amperes
© 2015 IXYS CORPORATION, All Rights Reserved
IXFT30N60X IXFQ30N60X
IXFH30N60X
Fig. 7. Maximum Drain Current vs.
Case Temperature
Fig. 8. Input Admittance
50
40
30
20
10
0
35
30
25
20
15
10
5
T
J
= 125ºC
25ºC
- 40ºC
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
-50
-25
0
25
50
75
100
125
150
VGS - Volts
TC - Degrees Centigrade
Fig. 10. Forward Voltage Drop of Intrinsic Diode
Fig. 9. Transconductance
30
25
20
15
10
5
100
90
80
70
60
50
40
30
20
10
0
T
J
= - 40ºC
25ºC
125ºC
T
J
= 125ºC
T
J
= 25ºC
0
0
10
20
30
40
50
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
ID - Amperes
VSD - Volts
Fig. 12. Capacitance
Fig. 11. Gate Charge
10,000
1,000
100
10
10
9
8
7
6
5
4
3
2
1
0
C
C
V
= 300V
DS
iss
I
I
= 15A
D
G
= 10mA
oss
C
rss
= 1 MHz
f
1
0
10
20
30
40
50
60
1
10
100
1000
VDS - Volts
QG - NanoCoulombs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT30N60X IXFQ30N60X
IXFH30N60X
Fig. 13. Output Capacitance Stored Energy
Fig. 14. Forward-Bias Safe Operating Area
20
18
16
14
12
10
8
100
10
R
DS(
on
Limit
)
25µs
100µs
1
1ms
6
10ms
0.1
0.01
T
= 150ºC
= 25ºC
DC
J
4
T
C
2
Single Pulse
0
0
100
200
300
400
500
600
10
100
1,000
VDS - Volts
VDS - Volts
Fig. 15. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2015 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_30N60X(J7-R4T45) 5-22-15-A
IXFT30N60X IXFQ30N60X
IXFH30N60X
TO-3P Outline
TO-268 Outline
TO-247 Outline
D
A
A
A2
0P
+
B
O 0K M D B M
A
0P
0P1
E
E1
+
E
+
A2
A2
Q
S
S
D2
+
4
R
+
+
D1
D1
D
D
0P1
4
1
2
3
ixys option
C
1
2
3
L1
L1
A1
E1
L
A1
b
b2
c
c
b
b4
Terminals: 1 - Gate
3 - Source
2,4 - Drain
b2
PINS: 1 - Gate
e
b4
+
O
2, 4 - Drain
3 - Source
J
M
C
A M
e
PINS: 1 - Gate
2, 4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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IXFH35N30S
Power Field-Effect Transistor, 35A I(D), 300V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
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