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IXFH320N10T2 [IXYS]

TrenchT2 HiperFET Power MOSFET; TrenchT2 HiperFET功率MOSFET
IXFH320N10T2
型号： IXFH320N10T2
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

TrenchT2 HiperFET Power MOSFET
TrenchT2 HiperFET功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
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Advance Technical Information  
TrenchT2TM HiperFETTM  
Power MOSFET  
VDSS = 100V  
ID25 = 320A  
RDS(on) ≤ 3.5mΩ  
IXFH320N10T2  
IXFT320N10T2  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-247 (IXFH)  
Fast Intrinsic Diode  
G
D
D (Tab)  
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
100  
100  
V
V
VDGR  
TO-268 (IXFT)  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
ID25  
ILRMS  
IDM  
TC = 25°C (Chip Capability)  
Lead Current Limit, RMS  
320  
160  
800  
A
A
A
S
D (Tab)  
TC = 25°C, Pulse Width Limited by TJM  
IA  
TC = 25°C  
TC = 25°C  
160  
1.5  
A
J
G = Gate  
S = Source  
D
= Drain  
EAS  
Tab = Drain  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C  
TC = 25°C  
15  
V/ns  
W
Features  
1000  
z High Current Handling Capability  
z Fast Intrinsic Diode  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
TJM  
Tstg  
z Avalanche Rated  
-55 ... +175  
z Fast Intrinsic Diode  
z
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
Low RDS(on)  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in.  
Advantages  
Weight  
TO-247  
TO-268  
6
4
g
g
z
Easy to Mount  
Space Savings  
z
z
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
100  
2.0  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
V
V
Applications  
4.0  
z
Synchronous Recification  
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
z
±200 nA  
z
IDSS  
25 μA  
z
TJ = 150°C  
VGS = 10V, ID = 100A, Notes 1 & 2  
1.75 mA  
Power Supplies  
DC Choppers  
AC Motor Drives  
Uninterruptible Power Supplies  
z
RDS(on)  
3.5 mΩ  
z
z
z
High Speed Power Switching  
Applications  
DS100237(2/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFH320N10T2  
IXFT320N10T2  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXFH) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
80  
130  
S
Ciss  
Coss  
Crss  
26  
2250  
450  
nF  
pF  
pF  
∅ P  
1
2
3
RGi  
Gate Input Resistance  
1.48  
Ω
td(on)  
tr  
td(off)  
tf  
36  
46  
ns  
ns  
ns  
ns  
Resistive Switching Times  
e
V
GS = 10V, VDS = 0.5 • VDSS, ID = 100A  
73  
Terminals: 1 - Gate  
2 - Drain  
RG = 1Ω (External)  
3 - Source  
177  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
Qg(on)  
Qgs  
430  
110  
125  
nC  
nC  
nC  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
RthJC  
RthCH  
0.15 °C/W  
°C/W  
TO-247  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Source-Drain Diode  
.780 .800  
.177  
Symbol  
Test Conditions  
Characteristic Values  
∅P 3.55  
Q
3.65  
.140 .144  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IS  
VGS = 0V  
320  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
1200  
1.2  
TO-268 (IXFT) Outline  
trr  
98  
6.6  
ns  
A
IF = 150A, VGS = 0V  
IRM  
QRM  
-di/dt = 100A/μs  
VR = 50V  
320  
nC  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Includes lead resistance.  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFH320N10T2  
IXFT320N10T2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
320  
280  
240  
200  
160  
120  
80  
400  
350  
300  
250  
200  
150  
100  
50  
VGS = 15V  
VGS = 15V  
10V  
8V  
7V  
10V  
7V  
6V  
5V  
6V  
5V  
4V  
40  
4V  
0
0
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 160A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
350  
300  
250  
200  
150  
100  
50  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 15V  
VGS = 10V  
10V  
8V  
7V  
I D = 320A  
6V  
5V  
I D = 160A  
4V  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 160A  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
180  
160  
140  
120  
100  
80  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
VGS = 10V  
External Lead Current limit  
TJ = 175ºC  
60  
40  
TJ = 25ºC  
20  
0
0
50  
100  
150  
200  
250  
300  
350  
400  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFH320N10T2  
IXFT320N10T2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
220  
200  
180  
160  
140  
120  
100  
80  
240  
200  
160  
120  
80  
TJ = - 40ºC  
25ºC  
TJ = 150ºC  
150ºC  
25ºC  
- 40ºC  
60  
40  
40  
20  
0
0
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
0
20  
40  
60  
80  
100 120 140 160 180 200 220 240  
ID - Amperes  
VGS - Volts  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
350  
300  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
VDS = 50V  
I
I
D = 160A  
G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
1,000  
100  
10  
100,000  
10,000  
1,000  
100  
R
Limit  
DS(on)  
= 1 MHz  
f
25µs  
C
iss  
100µs  
External Lead Limit  
1ms  
C
oss  
T
= 175ºC  
J
T
= 25ºC  
C
C
10ms  
rss  
Single Pulse  
100ms  
DC  
1
0
5
10  
15  
20  
25  
30  
35  
40  
1
10  
100  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFH320N10T2  
IXFT320N10T2  
Fig. 14. Resistive Turn-on Rise Time vs.  
Drain Current  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
300  
250  
200  
150  
100  
50  
300  
250  
200  
150  
100  
50  
RG = 1Ω , VGS = 10V  
I D = 200A  
VDS = 50V  
RG = 1ꢀ , VGS = 10V  
DS = 50V  
TJ = 125ºC  
V
TJ = 25ºC  
I D = 100A  
0
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
40  
60  
80  
100  
120  
140  
160  
180  
200  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
450  
400  
350  
300  
250  
200  
150  
100  
120  
110  
100  
90  
600  
500  
400  
300  
200  
100  
0
130  
110  
90  
t f  
t
d(off) - - - -  
t r  
t
d(on) - - - -  
RG = 1Ω, VGS = 10V  
TJ = 125ºC, VGS = 10V  
VDS = 50V  
VDS = 50V  
I D = 200A  
70  
I D = 100A  
80  
I D = 200A  
50  
I D = 100A  
70  
30  
60  
50  
10  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
1
2
3
4
5
6
7
8
9
10  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
110  
105  
100  
95  
tf  
t
d(off) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 50V  
V
tf  
t
d(off) - - - -  
RG = 1ꢀ, VGS = 10V  
DS = 50V  
I D = 200A  
TJ = 125ºC  
90  
85  
V
80  
TJ = 25ºC  
75  
I D = 100A  
70  
65  
0
60  
40  
60  
80  
100  
120  
140  
160  
180  
200  
1
2
3
4
5
6
7
8
9
10  
ID - Amperes  
RG - Ohms  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFH320N10T2  
IXFT320N10T2  
Fig. 19. Maximum Transient Thermal Impedance  
dfafas  
0.300  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_320N10T2(98)02-01-10  

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