DSSK80-0035B [LITTELFUSE]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 35V V(RRM), Silicon, TO-247AD, TO-247AD, 3 PIN;
| 型号： | DSSK80-0035B |
| 厂家： | 
LITTELFUSE |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 35V V(RRM), Silicon, TO-247AD, TO-247AD, 3 PIN 局域网 二极管 |
| 文件： | 总2页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSSK 80-0035/45B
IFAV = 2x40 A
VRRM = 35 - 45 V
VF = 0.45 V
Power Schottky Rectifier
with common cathode
Preliminary Data
TO-247 AD
VRSM
V
VRRM
V
Type
A
C
A
35
45
35
45
DSSK 80-0035B
DSSK 80-0045B
A
C
AB)
A
A = Anode, C = Cathode , TAB = Cathode
Symbol
Test Conditions
Maximum Ratings
IFRMS
IFAV
IFAV
70
40
80
A
A
A
TC = 125°C; rectangular, d = 0.5
TC = 125°C; rectangular, d = 0.5; per device
Features
● International standard package
● Very low VF
IFSM
EAS
IAR
TVJ = 45°C; tp = 10 ms (50 Hz), sine
900
57
2
A
mJ
A
● Extremely low switching losses
● Low IRM-values
IAS = 20 A; L = 180 µH; TVJ = 25°C; non repetitive
VA =1.5 • VRRM typ.; f=10 kHz; repetitive
● Epoxy meets UL 94V-0
(dv/dt)cr
1000
V/µs
Applications
Rectifiers in switch mode power
●
TVJ
TVJM
Tstg
-55...+150
150
-55...+150
°C
°C
°C
supplies (SMPS)
Free wheeling diode in low voltage
converters
●
Ptot
Md
TC = 25°C
155
W
Advantages
●
mounting torque
0.45...0.55
4...5
Nm
lb.in.
High reliability circuit operation
●
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
●
Weight
typical
6
g
●
Dimensions see end of catalog
Symbol
IR
VF
Test Conditions
Characteristic Values
typ.
max.
TVJ = 25°C VR = VRRM
TVJ = 100°C VR = VRRM
10
250
mA
mA
IF = 40 A; TVJ = 125°C
0.45
0.51
0.69
V
V
V
IF = 40 A; TVJ
=
25°C
IF = 80 A; TVJ = 125°C
RthJC
RthCH
0.8
K/W
K/W
0.25
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 1998 IXYS All rights reserved
36
DSSK 80-0035/45B
100
A
10000
10000
mA
pF
CT
TVJ=150°C
1000
IR
IF
125°C
100°C
75°C
50°C
25°C
100
10
1
10
1000
TVJ
=
150°C
125°C
25°C
TVJ= 25°C
1
0.0
100
0.1
0.2
0.4
0.6 V
0
10
20
30
VR
40
V
0
10
20
30
40
VR
50
V
VF
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 2 Typ. value of reverse current IR
versus reverse voltage VR
Fig. 3 Typ. junction capacitance CT
versus reverse voltage VR
45
W
40
80
A
70
35
P(AV)
60
IF(AV)
30
50
d=0.5
DC
25
d =
DC
0.5
0.33
0.25
0.17
0.08
40
30
20
10
0
20
15
10
5
0
A
0
10 20 30 40 50 60
IF(AV)
0
40
80
120
160
°C
TC
Fig. 4 Average forward current IF(AV)
versus case temperature TC
Fig. 5 Forward power loss
characteristics
1
K/W
D=0.5
ZthJC
0.33
0.25
0.17
Single Pulse
0.08
0.1
DSSK 80-0045B
0.05
0.001
0.01
0.1
1
10
s
t
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Note: All curves are per diode
© 1998 IXYS All rights reserved
37
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