DSSS30-01AR [LITTELFUSE]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon, ISOPLUS247, 3 PIN;
| 型号： | DSSS30-01AR |
| 厂家： | 
LITTELFUSE |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon, ISOPLUS247, 3 PIN 二极管 |
| 文件： | 总2页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSSS 30-01AR
IFAV = 2x30 A
VRRM = 100 V
VF = 0.63 V
Power Schottky Rectifier
dual diode
ISOPLUS 247TM
A
C/A
C
VRSM
V
VRRM
V
Type
C
A/C
A
100
100
DSSS 30-01AR
Isolated
backsurface*
C = Cathode, A = Anode
Symbol
Conditions
Maximum Ratings
Features
• International standard package
• Very low VF
• Extremely low switching losses
• Low IRM-values
IFRMS
IFAV
IFAV
70
30
60
A
A
A
TC = 155°C; rectangular, d = 0.5
TC = 155°C; rectangular, d = 0.5; per device
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
600
11.3
1.5
A
mJ
• Isolated and UL registered E153432
EAS
IAS = 15 A; L = 100 µH; TVJ = 25°C; non repetitive
VA =1.5 • VRRM typ.; f=10 kHz; repetitive
Applications
IAR
A
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
(dv/dt)cr
5000
V/µs
TVJ
TVJM
Tstg
-55...+175
175
-55...+150
°C
°C
°C
Advantages
Ptot
TC = 25°C
190
20...120
3000
6
W
N
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
FC
mounting force with clip
50/60 Hz, RMS; t = 1 s
typical
VISOL
Weight
V~
g
Dimensions see Outlines.pdf
Symbol
IR ꢀ
VF
Conditions
Characteristic Values
typ.
max.
VR = VRRM; TVJ = 25°C
VR = VRRM; TVJ = 125°C
2
20
mA
mA
IF = 30 A; TVJ = 125°C
IF = 30 A; TVJ = 25°C
IF = 60 A; TVJ = 125°C
0.63
0.79
0.78
V
V
V
RthJC
RthCH
0.8
K/W
K/W
0.25
Pulse test: ꢀ Pulse Width = 5 ms, Duty Cycle < 2.0%
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
1 - 2
DSSS 30-01AR
10000
100
A
100
mA TVJ=175°C
pF
CT
10
IR
IF
150°C
1
TVJ= 25°C
125°C
1000
10
TVJ
=
100°C
0.1
175°C
150°C
125°C
25°C
75°C
50°C
25°C
0.01
100
1
0.0
0.001
V
0
20
40
60
80
VR
0.2
0.4
0.6
0.8 V 1.0
0
20
40
60
80
VR
V
VF
Fig. 1 Max. forward voltage
drop characteristics
Fig. 2 Typ. reverse current IR
versus reverse voltage
Fig. 3 Typ. junction capacitance CT
vs. reverse voltage VR
60
W
80
A
50
d = 0.5
P(AV)
40
60
DC
IF(AV)
40
d =
DC
0.5
0.33
0.25
0.17
0.08
30
20
10
0
20
0
A
0
10 20 30 40 50 70
0
50
100
150
°C
TC
IF(AV)
Fig. 4 Avg. forward current IF(AV)
vs. case temperature TC
Fig. 5 Forward power loss characteristics
1
K/W
D = 0.5
0.33
0.25
ZthJC
0.1
0.17
0.08
Single Pulse
DSSS 30-01AR
Note: All curves are per diode
0.01
1e-5
1e-4
1e-3
1e-2
1e-1
1e+0
1e+1
s
t
Fig. 6 Transient thermal impedance junction to case at various duty cycles
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
2 - 2
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