DSSK80-003B [LITTELFUSE]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 30V V(RRM), Silicon, TO-247AD, TO-247AD, 3 PIN;
| 型号： | DSSK80-003B |
| 厂家： | 
LITTELFUSE |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 30V V(RRM), Silicon, TO-247AD, TO-247AD, 3 PIN 局域网 二极管 |
| 文件： | 总2页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSSK 80-0025B
DSSK 80-003B
IFAV = 2x40 A
VRRM = 25 / 30 V
VF = 0.39 V
Power Schottky Rectifier
with common cathode
TO-247 AD
VRSM
V
VRRM
V
Type
A
C
A
A
C
A
25
30
25
30
DSSK 80-0025B
DSSK 80-003B
AB)
A = Anode, C = Cathode , TAB = Cathode
Symbol
Conditions
Maximum Ratings
Features
• International standard package
• Very low VF
• Extremely low switching losses
• Low IRM-values
IFRMS
IFAV
IFAV
70
40
80
A
A
A
TC = 130°C; rectangular, d = 0.5
TC = 130°C; rectangular, d = 0.5; per device
• Epoxy meets UL 94V-0
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
600
10
A
mJ
EAS
IAS = 6 A; L = 180 µH; TVJ = 25°C; non repetitive
VA =1.5 • VRRM typ.; f=10 kHz; repetitive
Applications
• Rectifiers in switch mode power
supplies (SMPS)
IAR
6
A
(dv/dt)cr
5000
V/µs
• Free wheeling diode in low voltage
converters
TVJ
TVJM
Tstg
-55...+150
150
-55...+150
°C
°C
°C
Advantages
Ptot
TC = 25°C
mounting torque
typical
155
0.8...1.2
6
W
Nm
g
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
Md
Weight
Dimensions see pages D2 - 87-88
Symbol
Conditions
Characteristic Values
typ.
max.
IR
ꢀ
TVJ = 25°C VR = VRRM
TVJ = 100°C VR = VRRM
40
250
mA
mA
VF
IF = 40 A; TVJ = 125°C
IF = 40 A; TVJ = 25°C
IF = 80 A; TVJ = 125°C
0.39
0.48
0.56
V
V
V
RthJC
RthCH
0.8
K/W
K/W
0.25
Pulse test: ꢀPulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
1 - 2
DSSK 80-0025B
DSSK 80-003B
100
A
10000
10000
mA
pF
CT
TVJ = 150°C
1000
IR
IF
125°C
100°C
100
10
1
10
TVJ
=
75°C
50°C
150°C
125°C
25°C
TVJ= 25°C
25°C
1
0.0
1000
0.1
0.2
0.4
VF
V0.6
0
5
10
15
20 V 25
VR
0
5
10
15
20 V 25
VR
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 2 Typ. value of reverse current IR
versus reverse voltage VR
Fig. 3 Typ. junction capacitance CT
versus reverse voltage VR
40
W
35
80
A
70
P(AV)
30
60
d = 0.5
DC
IF(AV)
50
25
d =
DC
0.5
0.33
0.25
0.17
0.08
20
40
30
20
10
0
15
10
5
0
0
10 20 30 40 50 60
IF(AV)
A
0
40
80
120
TC
160
°C
Fig. 4 Average forward current IF(AV)
versus case temperature TC
Fig. 5 Forward power loss
characteristics
1
K/W
D=0.5
ZthJC
0.33
0.25
0.17
Single Pulse
0.08
0.1
DSSK 80-0025B
0.001
0.01
0.1
1
s
10
t
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Note: All curves are per diode
© 2002 IXYS All rights reserved
2 - 2
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