DHF30IM600PN [LITTELFUSE]
Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, TO-220FPAB, 3 PIN;
| 型号： | DHF30IM600PN |
| 厂家： | 
LITTELFUSE |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, TO-220FPAB, 3 PIN 软恢复二极管 快速软恢复二极管 局域网 |
| 文件： | 总2页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DHF 30 IM 600PN
advanced
VRRM = 600 V
Sonic-FRD
15 A
IFAV
trr
=
=
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
35 ns
1
(Marking on product)
Part number
2
DHF 30 IM 600PN
3
Features / Advantages:
Applications:
Package:
● Planar passivated chips
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
TO-220FPAB
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Industry standard outline
● Plastic overmolded tab for
electrical isolation
● Epoxy meets UL 94V-0
● RoHS compliant
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
R a t i n g s
Symbol
VRRM
IR
Definition
Conditions
min.
typ.
max.
Unit
max. repetitive reverse voltage
=
=
25 °C
25 °C
600
V
TVJ
reverse current
V = 600
50
5
V
V
TVJ
TVJ
TVJ
µA
R
V = 600
= 125 °C
25 °C
mA
R
forward voltage
IF
IF
=
=
30 A
=
2.37
3.18
V
V
VF
60 A
IF
IF
=
=
30 A
60 A
TVJ = 125 °C
2.22
3.11
V
V
average forward current
threshold voltage
IFAV
rectangular, d = 0.5
TC
=
35 °C
15
A
V
VF0
rF
TVJ = 150 °C
1.31
29.2
for power loss calculation only
slope resistance
m
Ω
thermal resistance junction to case
virtual junction temperature
total power dissipation
RthJC
TVJ
3.50
150
35
K/W
°C
W
-55
Ptot
=
=
=
25 °C
45 °C
25 °C
TC
max. forward surge current
max. reverse recovery current
IFSM
IRM
tp = 10 ms (50 Hz), sine
TVJ
200
A
12
A
A
TVJ
TVJ
IF = 30 A;
= 125 °C
25 °C
= 125 °C
-diF /dt = 600 A/µs
VR = 400 V
t rr
reverse recovery time
=
35
40
ns
ns
TVJ
TVJ
TVJ
junction capacitance
CJ
VR = 300 V;
=
=
°C
pF
mJ
A
f = 1 MHz
2 A; L = 100 µH
V = 1.5·V typ.;
25
non-repetitive avalanche energy
repetitive avalanche current
EAS
IAR
IAS
=
TVJ
25 °C
0.5
0.9
f = 10 kHz
A
R
Recommended replacement:
DHG30I600HA, DHG30I600PA
* Data according to IEC 60747and per diode unless otherwise specified
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
20080317a
DHF 30 IM 600PN
advanced
Ratings
Symbol
IRMS
Definition
Conditions
min.
typ.
max.
Unit
A
RMS current
per pin*
35
thermal resistance case to heatsink
RthCH
0.50
K/W
mounting torque
MD
F C
0.4
20
0.6
60
Nm
N
mounting force with clip
storage temperature
Tstg
-55
150
°C
g
Weight
2
* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Outlines
TO-220FPAB
E
ØP
A
A1
H
Q
D
L1
A2
L
c
b1
b
e
IXYS reserves the right to change limits, conditions and dimensions.
* Data according to IEC 60747and per diode unless otherwise specified
© 2006 IXYS all rights reserved
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