DHG10C600PB [LITTELFUSE]
Rectifier Diode, 1 Phase, 2 Element, 5A, 600V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3;
| 型号： | DHG10C600PB |
| 厂家： | 
LITTELFUSE |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 5A, 600V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 软恢复二极管 快速软恢复二极管 局域网 |
| 文件： | 总4页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DHG10C600PB
preliminary
=
VRRM
IFAV
trr
600V
5A
Sonic Fast Recovery Diode
= 2x
=
35ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DHG10C600PB
Backside: cathode
1
2
3
TO-220
Features / Advantages:
Applications:
Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
© 2013 IXYS all rights reserved
DHG10C600PB
preliminary
Ratings
Fast Diode
Symbol
VRSM
Definition
Conditions
min. typ. max. Unit
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
600
600
10
V
V
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
VRRM
IR
reverse current, drain current
VR = 600 V
VR = 600 V
IF = 5 A
IF = 10 A
IF = 5 A
µA
mA
V
1
forward voltage drop
2.21
3.07
2.17
3.13
5
VF
V
TVJ
=
°C
V
125
IF = 10 A
TC = 105°C
rectangular
V
average forward current
threshold voltage
TVJ = 150°C
TVJ = 150°C
A
IFAV
d = 0.5
1.14
V
VF0
rF
for power loss calculation only
slope resistance
185 mΩ
3.15 K/W
K/W
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
Ptot
IFSM
CJ
0.50
TC = 25°C
TVJ = 45°C
TVJ = 25°C
TVJ = 25°C
40
40
W
A
total power dissipation
max. forward surge current
junction capacitance
t = 10 ms; (50 Hz), sine; VR = 0 V
VR = 400V f = 1 MHz
3
2
pF
A
max. reverse recovery current
IRM
tbd
35
tbd
A
IF =
-diF
5 A; VR = 400 V
/dt = 100A/µs
TVJ
TVJ = 25°C
TVJ °C
=
°C
reverse recovery time
ns
ns
trr
=
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
© 2013 IXYS all rights reserved
DHG10C600PB
preliminary
Ratings
Package TO-220
Symbol
IRMS
Definition
Conditions
min. typ. max. Unit
1)
per terminal
35
150
125
150
A
°C
°C
°C
g
RMS current
-55
-55
-55
TVJ
virtual junction temperature
Top
operation temperature
storage temperature
Tstg
2
Weight
0.4
20
0.6 Nm
60
MD
mounting torque
F
N
mounting force with clip
C
Product Marking
Part description
D = Diode
H = Sonic Fast Recovery Diode
G = extreme fast
10 = Current Rating [A]
C = Common Cathode
600 = Reverse Voltage [V]
PB = TO-220AB (3)
Part Number
Logo
XXXXXX
Zyyww
Assembly Line
Lot #
abcdef
Date Code
Ordering
Standard
Ordering Number
DHG10C600PB
Marking on Product
DHG10C600PB
Delivery Mode
Quantity Code No.
50 505294
Tube
TVJ = 150°C
Equivalent Circuits for Simulation
* on die level
Fast
V0
I
R0
Diode
1.14
182
threshold voltage
slope resistance *
V
V0 max
R0 max
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
© 2013 IXYS all rights reserved
DHG10C600PB
preliminary
Outlines TO-220
A
Dim.
Millimeter
Min.
Inches
= supplier option
Max. Min.
Max.
A1
E
A
A1
A2
4.32
1.14
2.29
4.82
1.39
2.79
0.170 0.190
0.045 0.055
0.090
0.110
ØP
4
b
b2
0.64
1.15
1.01
1.65
0.025 0.040
0.045 0.065
C
D
0.35 0.56
14.73 16.00
0.014 0.022
0.580 0.630
1
2
3
E
e
H1
9.91 10.66
0.390 0.420
0.100 BSC
0.230 0.270
3x b2
3x b
2.54
5.85
BSC
6.85
L
L1
12.70 13.97
5.84
0.500 0.550
0.110 0.230
2.79
C
ØP
Q
3.54
2.54
4.08
3.18
0.139 0.161
0.100 0.125
2x e
A2
1
2
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
© 2013 IXYS all rights reserved
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