DHG100X1200NA [LITTELFUSE]
Rectifier Diode, Avalanche, 1 Phase, 2 Element, 50A, 1200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MINIBLOC-4;
| 型号： | DHG100X1200NA |
| 厂家： | 
LITTELFUSE |
| 描述： | Rectifier Diode, Avalanche, 1 Phase, 2 Element, 50A, 1200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MINIBLOC-4 非常快速的软恢复二极管 快速软恢复二极管 局域网 测试 |
| 文件： | 总4页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DHG 100 X 1200 NA
preliminary
VRRM = 1200 V
Sonic Fast Recovery Diode
IFAV = 2x
A
50
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Parallel legs
trr
=
200 ns
Part number
DHG 100 X 1200 NA
Backside: Isolated
Features / Advantages:
Applications:
Package:
● Planar passivated chips
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Housing: SOT-227B (minibloc)
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
●rIndustry standard outline
●rCu base plate internal DCB isolated
●rIsolation Voltage 3000 V
●rEpoxy meets UL 94V-0
●rRoHS compliant
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
R a t i n g s
Conditions
Symbol
VRRM
IR
Definition
min. typ. max. Unit
TVJ
1200
100
V
max. repetitive reverse voltage
reverse current
=
=
25°C
25°C
µA
VR = 1200V
VR = 1200V
TVJ
TVJ = 125°C
TVJ 25°C
1.2 mA
forward voltage
VF
IF
IF
IF
IF
=
=
=
=
50A
100A
50A
=
2.16
V
V
V
V
A
V
2.78
2.13
2.97
50
T
VJ = 125°C
100A
IFAV
VF0
rF
TC
= 65°C
average forward current
threshold voltage
rectangular
d = 0.5
TVJ = 150°C
1.26
for power loss calculation only
slope resistance
15.3 mΩ
RthJC
TVJ
Ptot
IFSM
IRM
0.60 K/W
thermal resistance junction to case
virtual junction temperature
total power dissipation
-40
150
200
500
°C
W
A
TC
=
=
25°C
45°C
max. forward surge current
max. reverse recovery current
TVJ
t = 10 ms (50 Hz), sine
45
60
A
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
A
IF = 60 A; VR = 600V
-diF/dt = 1200 A/µs
reverse recovery time
junction capacitance
trr
200
350
27
ns
ns
pF
CJ
VR = 600 V; f = 1 MHz
TVJ = 25°C
IXYS reserves the right to change limits, conditions and dimensions.
20110526b
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
©
DHG 100 X 1200 NA
preliminary
Ratings
Symbol
IRMS
Definition
Conditions
min. typ. max. Unit
per terminal
100
A
K/W
°C
RMS current
R thCH
Tstg
0.10
30
thermal resistance case to heatsink
storage temperature
-40
150
Weight
g
mounting torque
terminal torque
isolation voltage
MD
1.1
1.1
1.5 Nm
M
1.5 Nm
T
t = 1 second
t = 1 minute
V
3000
2500
3.2
V
V
ISOL
creepage | striking distance on surface | through air
creepage | striking distance on surface | through air
terminal to terminal
terminal to backside
dSpp/App
dSpb/Apb
10.5
8.6
mm
mm
6.8
Part number
D = Diode
H = Sonic Fast Recovery Diode
G = extreme fast
Product Marking
100 = Current Rating [A]
X = Parallel legs
1200 = Reverse Voltage [V]
NA = SOT-227B (minibloc)
Logo
Part No.
abcde
XXXXXX
YYWWZ
Assembly Code
DateCode
Assembly Line
Ordering
Part Name
Marking on Product
DHG100X1200NA
Delivering Mode
Tube
Base Qty Code Key
10 507759
DHG 100 X 1200 NA
Standard
IXYS reserves the right to change limits, conditions and dimensions.
20110526b
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
©
DHG 100 X 1200 NA
preliminary
Outlines
SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions.
20110526b
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
©
DHG 100 X 1200 NA
preliminary
120
100
80
60
40
20
0
14
12
10
8
TVJ = 125°C
VR = 600 V
120 A
60 A
IF
Qrr
[A]
[µC]
6
30 A
TVJ = 125°C
4
TVJ
=
25°C
2
0.0
0.5
1.0
1.5
2.0
2.5
3.0
600
700
800
900 1000 1100 1200 1300
VF [V]
diF /dt [A/µs]
Fig. 1 Typ. Forward current versus VF
Fig. 2 Typ. reverse recov.charge Qrr vs. di/dt
90
80
70
60
50
40
30
20
10
0
700
600
500
400
300
200
100
0
TVJ = 125°C
VR = 600 V
120 A
TVJ = 125°C
VR = 600 V
60 A
30 A
IRR
trr
120 A
60 A
[A]
[ns]
30 A
600
700
800
900 1000 1100 1200 1300
600
700
800
900 1000 1100 1200 1300
diF /dt [A/µs]
diF /dt [A/µs]
Fig. 3 Typ. peak reverse current IRM vs. di/dt
Fig. 4 Typ. recovery time trr versus di/dt
4.0
3.2
2.4
1.6
0.8
0.0
1
TVJ = 125°C
120 A
VR = 600 V
60 A
30 A
Erec
ZthJC
0.1
[mJ]
[K/W]
i
Ri
0.137 0.0025
0.1 0.03
0.233 0.03
0.130 0.08
i
1
2
3
4
0.01
0.001
600
700
800
900 1000 1100 1200 1300
0.01
0.1
1
10
tp [s]
diF /dt [A/µs]
Fig. 5 Typ. recovery energy Erec versus di/dt
Fig. 6 Typ. transient thermal impedance
IXYS reserves the right to change limits, conditions and dimensions.
20110526b
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
©
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