LTE-329P4-M [LITEON]
Property of Lite-On Only; 精简版，关于财产只有
| 型号： | LTE-329P4-M |
| 厂家： | 
LITE-ON TECHNOLOGY CORPORATION |
| 描述： | Property of Lite-On Only |
| 文件： | 总4页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LITE-ON TECHNOLOGY CORPORATION.
P r o p e r t y o f Li t e - O n O n l y
FEATURES
* SELECTED TO SPECIFIC ON-LINE INTENSITY AND RADIANT INTENSITY RANGES
* LOW COST MINIATURE PLASTIC SIDE LOOKING PACKAGE
* MECHANICALLY AND SPECTRALLY MATCHED TO THE LTR-5886DHP4-M SERIES OF
PHOTOTRANSISTOR
PACKAGE DIMENSIONS
NOTES:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.25mm(.010") unless otherwise noted.
3. Lead spacing is measured where the leads emerge from the package.
4. Specifications are subject to change without notice.
Part No. : LTE-329P4-M DATA SHEET (FOR KINPO ONLY)
BNS-OD-C131/A4
Page :
1
of
4
LITE-ON TECHNOLOGY CORPORATION.
P r o p e r t y o f Li t e - O n O n l y
℃
ABSOLUTE MAXIMUM RATINGS AT TA=25
PARAMETER
MAXIMUM RATING
UNIT
mW
A
Power Dissipation
75
1
μ
Peak Forward Current (300pps, 10 s pulse)
Continuous Forward Current
Reverse Voltage
50
5
mA
V
℃
-10 to + 50
℃
℃
Operating Temperature Range
Storage Temperature Range
℃
-40 to + 70
Lead Soldering Temperature
[1.6mm(.063") From Body]
℃
260
for 5 Seconds
Part No. : LTE-329P4-M DATA SHEET (FOR KINPO ONLY)
BNS-OD-C131/A4
Page :
2
of
4
LITE-ON TECHNOLOGY CORPORATION.
P r o p e r t y o f Li t e - O n O n l y
℃
ELECTRICAL / OPTICAL CHARACTERISTICS AT TA=25
TEST
CONDITION. No.
BIN
PARAMETER
SYMBOL MIN.
TYP.
MAX.
970
UNIT
λP
Δλ
VF
Peak Emission Wavelength
Spectral Line Half-Width
Forward Voltage
930
940
50
nm
nm
V
IF = 20mA
IF = 20mA
IF = 20mA
VR = 5V
1.2
1.5
10
μ
A
Reverse Current
IR
Axis Intensity (Light Current)
Setting of LITE-ON
Production(Average Light
Current of 2
0.605
0.945
BINA
0.945
1.30
IF = 4mA
(IL)
(IL)
mA
Vcc=3.5V
BINB
Phototransister,(IL1+IL2)/2)
Axis Intensity (Light Current)
Setting of LITE-ON Q.C
(Average Light Current of 2
Phototransister,(IL1+IL2)/2)
0.550
0.787
1.050
1.560
BINA
IF = 4mA
Vcc=3.5V
mA
BINB
θ
Viewing Angle (See FIG.6)
Axis Intensity Ratio(IL1/IL2)
2
40
deg.
1/2
R
0.8
1.0
1.2
INFRARED AXIS INTENSITY TEST METHOD
Part No. : LTE-329P4-M DATA SHEET (FOR KINPO ONLY)
BNS-OD-C131/A4
Page :
3
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4
LITE-ON TECHNOLOGY CORPORATION.
P r o p e r t y o f Li t e - O n O n l y
TYPICAL ELECTRICAL / OPTICAL CHARACTERISTICS CURVES
℃
(25
Ambient Temperature Unless Otherwise Noted)
1.0
0.5
0
60
50
40
30
20
10
0
840
940
Wavelength (nm)
1040
-40 -20
Ambient Temperature Ta ( o C)
0
20 40 60 80 100
FIG.1 SPECTRAL DISTRIBUTION
FIG.2 FORWARD CURRENT VS.
AMBIENT TEMPERATURE
10-1
1.2
1.0
0.8
0.6
0.4
0.2
0
MIN. MAX.
10-2
10-3
10-4
0
0.2
0.6
1.0
1.4
-20
0
20
40
60
80
Forward Voltage (V)
Ambient Temperature Ta ( o C)
FIG.3 FORWARD CURRENT VS.
FORWARD VOLTAGE
FIG.4 RELATIVE RADIANT INTENSITY
VS. AMBIENT TEMPERATURE
0o 10o 20o
30o
5.0
4.0
3.0
2.0
1.0
0
40o
50o
60o
1.0
0.9
0.8
70o
0.7
80o
90o
0
20
40
60
80 100
0.5 0.3 0.1
0.2 0.4 0.6
Foward Current (mA)
FIG.5 RELATIVE RADIANT INTENSITY
VS. FORWARD CURRENT
FIG.6 RADIATION DIAGRAM
Part No. : LTE-329P4-M DATA SHEET (FOR KINPO ONLY)
BNS-OD-C131/A4
Page :
4
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