LTE-4206C [LITEON]

GaAlAs T-1 Standard 3 Infrared Emitting Diode; GaAlAs的T- 1标准3红外发光二极管
LTE-4206C
型号: LTE-4206C
厂家: LITE-ON TECHNOLOGY CORPORATION    LITE-ON TECHNOLOGY CORPORATION
描述:

GaAlAs T-1 Standard 3 Infrared Emitting Diode
GaAlAs的T- 1标准3红外发光二极管

光电 二极管
文件: 总2页 (文件大小:276K)
中文:  中文翻译
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GaAlAs T-1 Standard 3  
Infrared Emitting Diode  
LTE-4206/LTE-4206C/LTE-4216/LTE-4216C  
Features  
Package Dimensions  
Selected to specific on-line intensity and radiant inten-  
sity ranges.  
Low cost plastic end looking package.  
Mechanically and spectrally matched to the LTR-4206  
series of phototransistor.  
The LTE-4206 series are made with Gallium Aluminum  
Arsenide window layer on Gallium Arsenide infrared  
emitting diodes.  
Description  
The LTE-4206 series are high intensity Gallium Aluminum  
Arsenide infrared emitting diodes mounted in clear plas-  
tic end looking packages. The LTE-4206 series provides  
a broad range of intensity selection. Suffix C-smoke  
color lens.  
Notes:  
1. All dimensions are in millimeters (inches).  
2. Tolerance is 0.25mm (.010") unless otherwise noted.  
3. Protruded resin under flange is 1.5mm (.059") max.  
4. Lead spacing is measured where the leads emerge from  
the package.  
5. Specifications are subject to change without notice.  
Absolute Maximum Ratings at Ta=25  
Parameter  
Maximum Rating  
Unit  
Power Dissipation  
90  
1
mW  
A
Peak forward Current (300pps, 10 s pulse)  
Continuous Forward Current  
Reverse Voltage  
60  
5
mA  
V
-40 to +85  
Operating Temperature Range  
Storage Temperature Range  
-55 to +100  
Lead Soldering Temperature  
[1.6mm (.063 in.) from body]  
260 for 5 Seconds  
Electrical Optical Characteristics at Ta=25  
Test  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Condition  
*Aperture Radiant Incidence  
Radiant Intensity  
Ee  
0.3  
0.7  
5.26  
940  
50  
mW/cm2  
mW/sr  
nm  
IF=20mA  
Ie  
2.25  
IF=20mA  
IF=20mA  
IF=20mA  
IF=20mA  
VR=5V  
Peak Emission Wavelength  
Spectral Line Half-Width  
Forward Voltage  
Peak  
nm  
VF  
IR  
1.2  
1.6  
V
Reverse Current  
100  
A
View Angle (See Fig.6)  
2
1/2  
20  
deg  
Note: *Ee is a measurement of the average radiant incidence upon a sensing area 1cm2 in perpendicular to and  
centered on the mechanical axis of the lens and 26.8mm from lens.  
10-10  
Typical Electrical/Optical Characteristic Curves  
(25 Ambient Temperature Unless Otherwise Noted)  
10-11  

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