LTE-3376 [LITEON]

Property of Lite-On Only; 精简版,关于财产只有
LTE-3376
型号: LTE-3376
厂家: LITE-ON TECHNOLOGY CORPORATION    LITE-ON TECHNOLOGY CORPORATION
描述:

Property of Lite-On Only
精简版,关于财产只有

文件: 总4页 (文件大小:334K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
LITE-ON TECHNOLOGY CORPORATION.  
P r o p e r t y o f L i t e - O n O n l y  
FEATURES  
* HIGH SPEED  
* HIGH POWER  
* AVAILABLE FOR PULSE OPERATING  
PACKAGE DIMENSIONS  
NOTES:  
1. All dimensions are in millimeters (inches).  
2. Tolerance is ±0.25mm(.010") unless otherwise noted.  
3. Protruded resin under flange is 1.5mm(.059") max.  
4. Lead spacing is measured where the leads emerge from the package.  
5. Specifications are subject to change without notice.  
Part No. : LTE-3376 DATA SHEET  
BNS-OD-C131/A4  
Page :  
1
of  
4
LITE-ON TECHNOLOGY CORPORATION.  
P r o p e r t y o f L i t e - O n O n l y  
ABSOLUTE MAXIMUM RATINGS AT TA=25℃  
PARAMETER MAXIMUM RATING  
UNIT  
mW  
A
Power Dissipation  
200  
1
Peak Forward Current (300pps, 10μs pulse)  
Continuous Forward Current  
Reverse Voltage  
80  
5
mA  
V
-40to + 85℃  
-55to + 100℃  
Operating Temperature Range  
Storage Temperature Range  
Lead Soldering Temperature  
[1.6mm(.063") From Body]  
260for 5 Seconds  
ELECTRICAL OPTICAL CHARACTERISTICS AT TA=25℃  
PARAMETER  
Radiant Intensity  
SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION  
IE  
30  
45  
850  
50  
mW/sr  
nm  
IF = 50mA  
IF = 50mA  
IF = 50mA  
IF = 50mA  
VR = 5V  
λ
Peak Emission Wavelength  
Spectral Line Half-Width  
Forward Voltage  
Peak  
Δλ  
VF  
nm  
1.6  
2.0  
V
μA  
nS  
Reverse Current  
IR  
100  
Rise/Fall Time  
Tr/Tf  
30  
30  
10%~90%  
2θ  
Viewing Angle (See FIG.6)  
deg.  
1/2  
Part No. : LTE-3376 DATA SHEET  
BNS-OD-C131/A4  
Page :  
2
of  
4
LITE-ON TECHNOLOGY CORPORATION.  
P r o p e r t y o f L i t e - O n O n l y  
TYPICAL ELECTRICAL / OPTICAL CHARACTERISTICS CURVES  
(25Ambient Temperature Unless Otherwise Noted)  
1.0  
0.5  
0
120  
100  
80  
60  
40  
20  
0
750  
850  
950  
-40 -20  
0
20 40 60 80 100  
Wavelength (nm)  
Ambient Temperature Ta ( o C)  
FIG.1 SPECTRAL DISTRIBUTION  
FIG.2 FORWARD CURRENT VS.  
AMBIENT TEMPERATURE  
100  
80  
60  
40  
20  
0
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
0
1.2 1.6 2.0 2.4 2.8  
Forward Voltage (V)  
-20  
0
20  
40  
60  
80  
Ambient Temperature Ta ( o C)  
FIG.3 FORWARD CURRENT VS.  
FORWARD VOLTAGE  
FIG.4 RELATIVE RADIANT INTENSITY  
VS. AMBIENT TEMPERATURE  
0o 10o 20o  
30o  
5.0  
4.0  
3.0  
2.0  
1.0  
0
o
40  
1.0  
50o  
60o  
0.9  
0.8  
70o  
0.7  
80o  
90o  
0
20  
40  
60  
80 100  
0.5 0.3 0.1  
0.2 0.4 0.6  
Foward Current (mA)  
FIG.5 RELATIVE RADIANT INTENSITY  
VS. FORWARD CURRENT  
FIG.6 RADIATION DIAGRAM  
Part No. : LTE-3376 DATA SHEET  
BNS-OD-C131/A4  
Page :  
3
of  
4
LITE-ON TECHNOLOGY CORPORATION.  
P r o p e r t y o f L i t e - O n O n l y  
PACKING  
LTE-3376  
130mm  
LTE-3376  
DIVICE NO.  
BIN QUANTITY  
LTE-3376  
295mm  
Q.C STAMP  
Bag volume  
Inner carton volume Outer carton volume  
Total volume  
(pcs / Bag)  
1000  
(Bag / carton)  
8
(Box / Carton)  
8
(pcs/outer carton)  
64000  
Part No. : LTE-3376 DATA SHEET  
BNS-OD-C131/A4  
Page :  
4
of  
4

相关型号:

LTE-3677

Property of Lite-On Only
LITEON

LTE-4206

SELECTED TO SPECIFIC ON-LINE INTENSITY AND RADIANT INTENSITY RANGES
LITEON

LTE-4206C

GaAlAs T-1 Standard 3 Infrared Emitting Diode
LITEON

LTE-4206_1

PHOTOTRANSISTOR
LITEON

LTE-4208

Property of LITE-ON Only
LITEON

LTE-4208M

Property of LITE-ON Only
LITEON

LTE-4209

Property of Lite-On Only
LITEON

LTE-4216

GaAlAs T-1 Standard 3 Infrared Emitting Diode
LITEON

LTE-4216C

GaAlAs T-1 Standard 3 Infrared Emitting Diode
LITEON

LTE-4238

Property of Lite-On Only
LITEON

LTE-4238C

Property of Lite-On Only
LITEON

LTE-4238R

Property of Lite-On Only
LITEON