SD103AX [LGE]
Schottky Barrier Diode; 肖特基二极管![SD103AX](http://pdffile.icpdf.com/pdf1/p00190/img/icpdf/SD103A_1075484_icpdf.jpg)
型号: | SD103AX |
厂家: | ![]() |
描述: | Schottky Barrier Diode |
文件: | 总2页 (文件大小:287K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SD103AX
Schottky Barrier Diode
SOD-523
Features
Low forward voltage drop.
Guard ring construction for transient protection.
Low reverse recovery time.
Low reverse capacitance.
Dimensions in inches and (millimeters)
Applications
Schottky barrier application.
Ordering Information
Type No.
SD103AX
Marking
S4
Package Code
SOD-523
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
V
DC Reverse voltage
VR
40
Continuous forward current
Repetitive peak forward current @t≤1.0s
Total power dissipation
IF
350
1
mA
A
IFRM
Ptot
400
300
125
mW
℃/W
℃
Total resistance junction to ambient
Junction temperature
RθJA
Tj
Storage temperature
Tstg
-65-125
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Min.
40
Typ. Max. Unit
Conditions
Reverse breakdown voltage V(BR)R
V
IR=100μA
0.37
V
IF=20mA
Forward voltage
VF
0.60
IF=200mA
μA
pF
ns
Reverse current
IR
5.0
VR=30V
Diode capacitance
Reverse recovery time
Cd
trr
50
10
VR=0V,f=1MHz
IF=IR=50mA,RL=100Ω
http://www.luguang.cn
mail:lge@luguang.cn
SD103AX
Schottky Barrier Diode
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
http://www.luguang.cn
mail:lge@luguang.cn
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SD103AX-TP
Rectifier Diode, Schottky, 1 Element, 0.35A, 40V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
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