SD103A_15 [VISHAY]
Small Signal Schottky Diodes;
| 型号： | SD103A_15 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Schottky Diodes |
| 文件： | 总5页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD103A, SD103B, SD103C
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diodes
FEATURES
• The SD103 series is a metal-on-silicon Schottky
barrier device which is protected by a PN
junction guardring
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications
• Other applications are click suppression,
efficient full wave bridges in telephone subsets, and
blocking diodes in rechargeable low voltage battery
systems
• These diodes are also available in the SOD-123 and
SOD-323 case with type designations SD103AW(S)-V to
SD103CW(S)-V, and in the MiniMELF case with type
designations LL103A thru LL103C
MECHANICAL DATA
Case: DO-35
Weight: approx. 125 mg
• For general purpose applications
• AEC-Q101 qualified
Cathode band color: black
Packaging codes/options:
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
APPLICATIONS
• HF-detector
• Protection circuit
• Small battery charger
• AC-DC/DC-DC converters
PARTS TABLE
TYPE
DIFFERENTATION
INTERNAL
CONSTRUCTION
PART
ORDERING CODE
TYPE MARKING
REMARKS
SD103A
SD103B
SD103C
V
V
V
R = 40 V
R = 30 V
R = 20 V
SD103A-TR or SD103A-TAP
SD103B-TR or SD103B-TAP
SD103C-TR or SD103C-TAP
SD103A
SD103B
SD103C
Single diode
Tape and reel/ammopack
Tape and reel/ammopack
Tape and reel/ammopack
Single diode
Single diode
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
V
SD103A
SD103B
SD103C
VR
40
30
Peak inverse voltage
VR
V
VR
20
V
Power dissipation (infinite heatsink) (1)
Single cycle surge 60 Hz sine wave
Ptot
400
15
mW
A
IFSM
Note
(1)
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air (1)
TEST CONDITION
SYMBOL
RthJA
Tj
VALUE
310
UNIT
K/W
°C
Junction temperature
125
Storage temperature range
Tstg
- 55 to + 150
°C
Note
(1)
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Rev. 1.7, 06-May-13
Document Number: 85754
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SD103A, SD103B, SD103C
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
V(BR)
V(BR)
V(BR)
IR
MIN.
TYP.
MAX.
UNIT
V
SD103A
SD103B
SD103C
SD103A
SD103B
SD103C
40
Reverse breakdown voltage
IR = 50 μA
30
V
20
V
V
R = 30 V
R = 20 V
R = 10 V
5
5
μA
μA
μA
mV
mV
pF
Leakage current
V
V
IR
IR
5
IF = 20 mA
IF = 200 mA
VF
370
600
Forward voltage drop
VF
Diode capacitance
VR = 0 V, f = 1 MHz
CD
50
10
IF = IR = 50 mA to 200 mA,
recover to 0.1 IR
Reverse recovery time
trr
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
100
10
10 000
1000
100
1
0.1
0.01
10
0.001
1
0
20
40
60
80 100 120 140 160
0
100 200 300 400 500 600 700 800 900 1000
16767
Tj - Junction Temperature (°C)
16765
VF - Forward Voltage (mV)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 3 - Reverse Current vs. Junction Temperature
5
4
3
2
1
0
30
f = 1 MHz
25
20
15
10
5
0
0
5
10
15
20
25
30
0.0
0.5
1.0
1.5
2.0
16768
VR - Reverse Voltage (V)
16766
VF - Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Rev. 1.7, 06-May-13
Document Number: 85754
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SD103A, SD103B, SD103C
www.vishay.com
Vishay Semiconductors
25
20
15
10
5
0
0.1
1.0
10.0
16769
tP - Pulse width (ms)
Fig. 5 - Typical Non-Repetitive Forward Surge Current vs.
Pulse Width
PACKAGE DIMENSIONS in millimeters (inches): DO-35
26 min. [1.024]
3.9 max. [0.154]
26 min. [1.024]
3.1 min. [0.120]
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
94 9366
Rev. 1.7, 06-May-13
Document Number: 85754
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 02-Oct-12
Document Number: 91000
1
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