SD103A_10 [VISHAY]
Small Signal Schottky Diodes; 小信号肖特基二极管
| 型号： | SD103A_10 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Schottky Diodes |
| 文件： | 总6页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD103A, SD103B, SD103C
Vishay Semiconductors
Small Signal Schottky Diodes
Features
• The SD103 series is a Metal-on-silicon
Schottky barrier device which is
protected by a PN junction guard ring.
• The low forward voltage drop and fast
switching make it ideal for protection of
MOS devices, steering, biasing and
coupling diodes for fast switching and low
logic level applications.
94 9367
• Other applications are click suppression, efficient
full wave bridges in telephone subsets, and
blocking diodes in rechargeable low voltage
battery systems.
• These diodes are also available in the SOD-123
and SOD-323 case with type designations
SD103AW(S)-V...SD103CW(S)-V, and in the
MiniMELF case with type designations LL103A
thru LL103C.
• For general purpose applications
• AEC-Q101 qualified
Applications
• HF-Detector
• Protection circuit
• Small battery charger
• AC-DC/DC-DC converters
Mechanical Data
Case: DO-35
Weight: approx. 125 mg
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
Cathode band color: black
Packaging codes/options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Part
Type differentiation
VR = 40 V
Ordering code
Type Marking
SD103A
Remarks
SD103A
SD103B
SD103C
SD103A-TR or SD103A-TAP
SD103B-TR or SD103B-TAP
SD103C-TR or SD103C-TAP
Tape and Reel/Ammopack
Tape and Reel/Ammopack
Tape and Reel/Ammopack
V
V
R = 30 V
R = 20 V
SD103B
SD103C
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Part
Symbol
VR
Value
40
Unit
V
SD103A
SD103B
SD103C
VR
VR
Peak inverse voltage
30
V
20
V
4001)
15
Ptot
IFSM
Power dissipation (infinite heatsink)
Single cycle surge 60 Hz sine wave
mW
A
1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Document Number 85754
Rev. 1.6, 23-Jul-10
www.vishay.com
1
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
SD103A, SD103B, SD103C
Vishay Semiconductors
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
RthJA
Value
3101)
Unit
K/W
°C
Thermal resistance junction to ambient air
Junction temperature
Tj
125
Tstg
Storage temperature range
- 55 to + 150
°C
1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Part
Symbol
V(BR)
Min.
Typ.
Max.
Unit
V
SD103A
SD103B
SD103C
SD103A
SD103B
SD103C
40
30
20
IR = 50 µA
V(BR)
V(BR)
IR
Reverse Breakdown Voltage
V
V
V
R = 30 V
5
5
µA
µA
µA
mV
mV
pF
VR = 20 V
VR = 10 V
IR
Leakage current
IR
5
IF = 20 mA
VF
370
600
Forward voltage drop
IF = 200 mA
VF
VR = 0 V, f = 1 MHz
CD
Diode capacitance
50
10
IF = IR = 50 to 200 mA,
recover to 0.1 IR
trr
Reverse recovery time
ns
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
1000
100
10
5
4
3
2
1
1
0.1
0.01
0.001
0
0
100 200 300 400 500 600 700 800 900 1000
VF - Forward Voltage (mV)
0.0
0.5
1.0
1.5
2.0
16766
VF - Forward Voltage (V)
16765
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Forward Current vs. Forward Voltage
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
2
Document Number 85754
Rev. 1.6, 23-Jul-10
SD103A, SD103B, SD103C
Vishay Semiconductors
10 000
1000
100
25
20
15
10
5
10
1
0
0
20
40
60
80 100 120 140 160
0.1
1.0
10.0
16767
16769
tP - Pulse width (ms)
Tj - Junction Temperature (°C)
Figure 3. Reverse Current vs. Junction Temperature
Figure 5. Typ. Non Repetitive Forward Surge Current vs.
Pulse Width
30
f = 1 MHz
25
20
15
10
5
0
0
5
10
15
20
25
30
16768
VR - Reverse Voltage (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
Package Dimensions in millimeters (inches): DO-35
Cathode identification
26 (1.024) min.
3.9 (0.154) max.
26 (1.024) min.
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
94 9366
Document Number 85754
Rev. 1.6, 23-Jul-10
www.vishay.com
3
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
DO35
Vishay Semiconductors
DO35
Package Dimensions in mm (Inches)
Cathode Identification
26 min. (1.024)
3.9 max. (0.154)
26 min. (1.024)
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
94 9366
Document Number 84001
Rev. 1.3, 12-Feb-07
www.vishay.com
1
DO35
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
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Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
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respectively
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substances and do not contain such substances.
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damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
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Document Number 84001
Rev. 1.3, 12-Feb-07
Legal Disclaimer Notice
Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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