ESD5Z03T1 [LGE]
Single Line TVS Diode For ESD Protection Portable Electronics; 单线TVS二极管用于ESD保护的便携式电子产品
| 型号： | ESD5Z03T1 |
| 厂家： | 
LGE |
| 描述： | Single Line TVS Diode For ESD Protection Portable Electronics |
| 文件： | 总4页 (文件大小：216K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESD5Z03T1-ESD5Z36T1
Single Line TVS Diode For ESD Protection Portable Electronics
Voltage:3~36 Volts
Power:120 Watts
SOD523
Features
120 Watts peak pules power( tp=8/20µs)
Small package for use in portable electronics
Suitable replacement for MLV’S in ESD protection applications
Low clamping voltage and leakage current
Pb free product are available : 99% Sn above can meet RoHS
environment substance directive request
Applications
Case: SOD-523 plastic
Terminals : Solderable per MIL-STD-750,Method 2026
Approx Weight: 0.0014 grams
Marking : ESD5Z03T1 : KD
ESD5Z05T1 : KE
ESD5Z08T1 : KR
Dimensions in inches and (millimeters)
ESD5Z12T1 : LE
ESD5Z15T1 : LM
ESD5Z24T1 : LZ
ESD5Z36T1: MP
MAXIMUMRATINGSANDELECTRICALCHATACTERISTICS
ABSOLUTE MAXIMUM RATING
Rating
Peak Pulse Power (tp=8/20 µs)
ESD Voltage
Symbol
PP K
Value
120
Units
W
25
KV
OC
VE S D
TJ
Operating Temperature
-50OC to 150 OC
-50OC to 150 OC
Storage Temperature
OC
TS TG
ELECTRICAL CHARA CTERISTICS
ESD5Z03T1
Parameter
Symbol
VRW M
VB R
Conditions
-
Min.
Typical
Max.
3.3
-
Units
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
-
4
-
-
-
-
V
V
IB R=1mA
VR=3.3V
µA
IR
125
Clamping Voltage(8/20 µs)
VC
IP P =1A
-
-
7
V
Off State Junction Capacitance
Off State Junction Capacitance
CJ
CJ
0Vdc Bias=f=1MHz
3Vdc Bias=f=1MHz
-
-
180
100
-
-
pF
pF
http://www.luguang.cn
mail:lge@luguang.cn
ESD5Z03T1-ESD5Z36T1
Single Line TVS Diode For ESD Protection Portable Electronics
ESD5Z 05T1
Parameter
Symbol
VRW M
VB R
Conditions
-
Min.
Typical
Max.
Units
V
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
-
6
-
-
-
-
5
-
IB R=1mA
VR=5V
V
µA
IR
10
Clamping Voltage(8/20 µs)
VC
IP P =1A
-
-
9
V
Off State Junction Capacitance
Off State Junction Capacitance
CJ
CJ
0Vdc Bias=f=1MHz
5Vdc Bias=f=1MHz
-
-
110
65
-
-
pF
pF
ESD5Z08T1
Parameter
Symbol
VRW M
VB R
Conditions
-
Min.
Typical
Max.
Units
V
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
-
8.5
-
-
-
-
8
-
IB R=1mA
VR=8V
V
µA
IR
10
Clamping Voltage(8/20 µs)
VC
IP P =1A
-
-
13.4
V
Off State Junction Capacitance
Off State Junction Capacitance
CJ
CJ
0Vdc Bias=f=1MHz
8Vdc Bias=f=1MHz
-
-
70
40
-
-
pF
pF
ESD5Z12T1
Parameter
Symbol
VRW M
VB R
Conditions
-
Min.
Typical
Max.
12
-
Units
V
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
-
13.3
-
-
-
-
IB R=1mA
VR=12V
V
µA
IR
0.01
19
Clamping Voltage(8/20 µs)
VC
IP P =1A
-
-
V
Off State Junction Capacitance
Off State Junction Capacitance
CJ
CJ
0Vdc Bias=f=1MHz
12Vdc Bias=f=1MHz
-
-
45
30
-
-
pF
pF
ESD5Z15T1
Parameter
Symbol
VRW M
VB R
Conditions
-
Min.
Typical
Max.
15
Units
V
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
-
16.7
-
-
-
-
IB R=1mA
VR=15V
-
V
µA
IR
0.01
Clamping Voltage(8/20 µs)
VC
IP P =1A
-
-
23
V
Off State Junction Capacitance
Off State Junction Capacitance
CJ
CJ
0Vdc Bias=f=1MHz
15Vdc Bias=f=1MHz
-
-
35
20
-
-
pF
pF
http://www.luguang.cn
mail:lge@luguang.cn
ESD5Z03T1-ESD5Z36T1
Single Line TVS Diode For ESD Protection Portable Electronics
ESD5Z 24T1
Parameter
Symbol
VRW M
VB R
Conditions
-
Min.
Typical
Max.
24
-
Units
V
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
-
26.7
-
-
-
IB R=1mA
VR=24V
V
µA
IR
-
0.01
36
Clamping Voltage(8/20 µs)
VC
IP P =1A
-
-
V
Off State Junction Capacitance
Off State Junction Capacitance
CJ
CJ
0Vdc Bias=f=1MHz
24Vdc Bias=f=1MHz
-
-
23
14
-
-
pF
pF
ESD5Z 36T1
Parameter
Symbol
VRW M
VB R
Conditions
-
Min.
Typical
Max.
36
Units
V
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
-
40
-
-
-
IB R=1mA
VR=36V
-
V
0.01
µA
IR
-
Clamping Voltage(8/20 µs)
VC
IP P =1A
-
-
60
V
Off State Junction Capacitance
Off State Junction Capacitance
CJ
CJ
0Vdc Bias=f=1MHz
36Vdc Bias=f=1MHz
-
-
17
12
-
-
pF
pF
http://www.luguang.cn
mail:lge@luguang.cn
ESD5Z03T1-ESD5Z36T1
Single Line TVS Diode For ESD Protection Portable Electronics
100
120
100
Peak Pulssee Power
tf
Peak Value IPP
TEST
WAVEFORM
PARAMETERS
8/20ms
80
m
80
60
40
20
0
60
40
e-t
m
20
td=t IPP/2
Average Power
0
0
25
50 75 100 125 150
0
5
10
15
20
25
30
TTL--LLeeaadd TTeemmppeerraattuurree--OCC
T-Time-ms
FIG. 2-Power Derating Curve
FIG. 1- Pulse Wave Form
10000
1000
320W,8/20ms Waveform
100
10
0.01
1
10
100
1000
10000
ttd--PPuullssee DDuurraattiioonn--mss
FIG. 3-Peak Pulse Power vs Pulse Time
400
300
200
100
0
0
1
2
3
4
5
6
VVR==RReevveerrssee VVoollttaaggee--VVoollttss
FIG. 4-Typical Reverse Voltage vs Capacitance
http://www.luguang.cn
mail:lge@luguang.cn
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