ESD5Z12 [WEITRON]
Transient Voltage Suppressors for ESD Protection; 瞬态电压抑制器ESD保护
| 型号： | ESD5Z12 |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Transient Voltage Suppressors for ESD Protection |
| 文件： | 总3页 (文件大小：769K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESD5Z12
Transient Voltage Suppressors for ESD Protection
TRANSIENT VOLTAGE
SUPPRESSORS
240 WATTS
P b
Lead(Pb)-Free
12 VOLTS
Description:
* The ESD5Z12 is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in -
cellular phones, MP3 players, digital cameras and many other portable
applications where board space is at a premium.
1
2
SOD-523/SC-79
Features:
* Stand−oꢀ Voltage: 12 V
* Low Leakage
* Response Time is Typically < 1 ns
* ESD Rating of Class 3 (> 16 kV) per Human Body Model
* IEC61000−4−2 Level 4 ESD Protection
SOD-523 Outline Dimensions
Unit:mm
−X−
A
−Y−
MILLIMETERS
B
DIM
MIN
NOM
MAX
1
2
D 2 PL
A
B
C
D
J
1.10
0.70
0.50
0.25
0.07
0.15
1.50
1.20
0.80
0.60
0.30
0.14
0.20
1.60
1.30
0.90
0.70
0.35
0.20
0.25
1.70
0.08 (0.003) M
T X Y
C
K
S
−T−
SEATING
PLANE
K
S
J
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ESD5Z12
Maximum Ratings(TA=25˚C Unless Otherwise Noted)
Characteristic
Symbol
Value
Unit
ESD Voltage
16
400
Per Human Body Model
Per Machine Model
kV
V
Electrostatic discharge
30
30
IEC61000-4-2 Air discharge
IEC61000-4-2 ContactAir discharge
kV
Total Power Dissipation on FR−5 Board1, @ TA = 25°C
150
PD
mW
Thermal Resistance Junction to Ambient
Lead Solder Temperature -Maximum
RθJA
TL
833
°C/W
°C
260(10s)
°C
Junction Temperature Range
Storage Temperature Range
TJ
150
Tstg
-55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
Functional operation above the Recommended. Operating Conditions is not implied. Extended exposure to
stresses above the Recommended Operating Conditions may aꢀect device reliability.
Note.1 FR−5 = 1.0 x 0.75 x 0.62 in.
Electrical Characteristics (T = 25°C unless otherwise noted, V = 0.9 V Max. @ I = 10 mA for all types)
A
F
F
V (V)(Note 1)
(W)
P
V
I
( A)
V
(V) @ I
(Note 2)
V (V)(Note 1)
I
(A)
C
pk
RWM
R
BR
T
C
PP
C (pF)
I
T
(V)
Max
12
@ V
@ I = 5.0 A
@ Max I
(Note 1) (Note 1)
RWM
PP
PP
Device
Marking
Max
Min Max
mA
Typ
Max
Max
Max
Typ
ESD5Z12
ZM
0.02
14.1 15.7
1.0
23
29
9.6
240
55
Note 1. Surge current waveform per Figure 1.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
Eqivalent Circuit Diagram
1
2
SOD-523 / SC-79
(Top View)
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ESD5Z12
Typical Characteristics (T = 25°C unless otherwise noted)
A
Symbol
Parameter
I
I
Maximum Reverse Peak Pulse Current
PP
I
F
V
Clamping Voltage @ I
PP
C
V
Working Peak Reverse Voltage
RWM
I
R
Maximum Reverse Leakage Current @ V
RWM
V
C
V
V
BR RWM
V
V
Breakdown Voltage @ I
I
V
BR
T
R
T
F
I
I
T
Test Current
I
F
Forward Current
V
F
Forward Voltage @ I
F
I
PP
P
pk
Peak Power Dissipation
C
Max. Capacitance @V = 0 and f = 1 MHz
Uni−Directional TVS
R
100
t
PEAK VALUE IRSM @ 8µs
r
90
80
70
60
50
40
30
20
PULSE WIDTH (t ) IS DEFINED
P
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8µs
HALF VALUE IRSM/2 @ 20µs
t
P
10
0
0
20
40
60
80
t, TIME (µs)
Fig.1 8 x 20 µs Pulse Waveform
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