BC847PN [LGE]
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LGE 
BC847PN
Complementary Transistor(PNP and NPN)
SOT-363
Features
Epitaxial Die Construction
Two internal isolated NPN/PNP Transistors in one package
MAKING: 7P
Dimensions in inches and (millimeters)
MAXIMUM RATINGS TR1 (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Units
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
50
V
45
V
6
V
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
0.1
A
PC*
200
150
-55-150
mW
TJ
℃
Tstg
Storage Temperature
℃
CHARACTERISTICS of TR1 (NPN Transistor) (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=10μA,IE=0
V(BR)CEO IC=10mA,IB=0
V(BR)EBO IE=1μA,IC=0
50
45
6
V
V
V
ICBO
IEBO
VCB=30V,IE=0
15
15
nA
nA
Emitter cut-off current
VEB=5V,IC=0
DC current gain
hFE
VCE=5V,IC=2mA
200
450
0.25
0.6
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
VBE(on)
VBE(on)
Cob
IC=10mA,IB=0.5mA
IC=100mA,IB=5mA
IC=10mA,IB=0.5mA
IC=100mA,IB=5mA
VCE=5V,IC=2mA
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
0.7
0.9
V
V
0.58
100
0.7
0.72
6.0
V
VCE=5V,IC=10mA
VCB=10V,IE=0,f=1MHz
VCE=5V,IC=10mA,f=100MHz
V
Collector output capacitance
Transition frequency
pF
MHz
fT
VCE=5V,Ic=0.2mA,
Noise figure
NF
10
dB
f=1kHz,Rg=2KΩ,∆f=200Hz
http://www.lgesemi.com
Revision:20170701-P1
mail:lge@lgesemi.com
BC847PN
Complementary Transistor(PNP and NPN)
MAXIMUM RATINGS TR2 (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Units
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-50
V
-45
V
-5
V
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
-0.1
A
PC*
200
mW
TJ
150
℃
Tstg
Storage Temperature
-55-150
℃
CHARACTERISTICS of TR2 (PNP Transistor) (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
-50
-45
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=-10μA,IE=0
IC=-10mA,IB=0
V
IE=-1μA,IC=0
V
VCB=-30V,IE=0
-15
-15
nA
nA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
DC current gain
hFE1
VCE=-5V,IC=-2mA
IC=-10mA,IB=-0.5mA
IC=-100mA,IB=-5mA
IC=-10mA,IB=-0.5mA
IC=-100mA,IB=-5mA
VCE=-5V,IC=-2mA
VCE=-5V,IC=-10mA
VCB=-10V,IE=0,f=1MHz
VCE=-5V,IC=-10mA,f=100MHz
220
475
-0.3
-0.65
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
VBE(on)
VBE(on)
Cob
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
-0.7
V
-0.95
-0.75
-0.82
4.5
V
-0.6
100
V
V
Collector output capacitance
Transition frequency
pF
MHz
fT
VCE=-5V,Ic=-0.2mA,
Noise figure
NF
10
dB
f=1kHz,Rg=2KΩ, ∆f=200Hz
http://www.lgesemi.com
Revision:20170701-P1
mail:lge@lgesemi.com
BC847PN
Complementary Transistor(PNP and NPN)
Typical Characteristics
http://www.lgesemi.com
Revision:20170701-P1
mail:lge@lgesemi.com
BC847PN
Complementary Transistor(PNP and NPN)
http://www.lgesemi.com
Revision:20170701-P1
mail:lge@lgesemi.com
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