BC847PNH6327XTSA1 [INFINEON]
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT PACKAGE-6;型号: | BC847PNH6327XTSA1 |
厂家: | Infineon |
描述: | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT PACKAGE-6 放大器 光电二极管 晶体管 |
文件: | 总10页 (文件大小:849K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BC846PN/UPN_BC847PN
NPN/PNP Silicon AF Transistor Arrays
• For AF input stage and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated NPN/PNP
transistor in one package
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BC846PN
BC846UPN
BC847PN
C1
B2
E2
6
5
4
TR2
TR1
1
2
3
E1
B1
C2
EHA07177
Type
Marking
1Os
1Os
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
BC846PN
BC846UPN
BC847PN
1Ps
2011-10-05
1
BC846PN/UPN_BC847PN
Maximum Ratings
Parameter
Symbol
Value
Unit
V
Collector-emitter voltage
BC846PN/UPN
BC847PN
V
V
V
V
CEO
CES
CBO
EBO
tot
65
45
Collector-emitter voltage
BC846PN/UPN
BC847PN
80
50
Collector-base voltage
BC846PN/UPN
BC847PN
80
50
6
100
200
Emitter-base voltage
Collector current
mA
I
C
Peak collector current, t ≤ 10 ms
I
p
CM
mW
Total power dissipation-
P
T ≤ 115°C, BC846PN, BC847PN
250
250
S
T ≤ 118°C, BC846UPN
S
150
°C
Junction temperature
Storage temperature
T
j
T
-65 ... 150
Thermal Resistance
Parameter
Junction - soldering point
BC846PN, BC847PN
BC846UPN
Symbol
Value
Unit
K/W
1)
R
thJS
≤ 140
≤ 130
1
For calculation of R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
2011-10-05
2
BC846PN/UPN_BC847PN
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
Collector-emitter breakdown voltage
V
V
V
V
V
(BR)CEO
(BR)CBO
(BR)CES
(BR)EBO
I = 10 mA, I = 0 , BC846PN/UPN
65
45
-
-
-
-
C
B
I = 10 mA, I = 0 , BC847PN
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0 , BC846PN/UPN
80
50
-
-
-
-
C
E
I = 10 µA, I = 0 , BC847PN
C
E
Collector-emitter breakdown voltage
I = 10 µA, V = 0 , BC846PN/UPN
80
50
-
-
-
-
C
BE
I = 10 µA, V = 0 , BC847PN
C
BE
Emitter-base breakdown voltage
I = 1 µA, I = 0
6
-
-
E
C
Collector-base cutoff current
I
µA
-
CBO
V
V
= 50 V, I = 0
-
-
-
-
0.015
5
CB
CB
E
= 30 V, I = 0 , T = 150 °C
E
A
DC current gain-
I = 10 µA, V = 5 V
h
FE
-
250
290
-
C
CE
I = 2 mA, V = 5 V
200
450
C
CE
1)
Collector-emitter saturation voltage
I = 10 mA, I = 0.5 mA
V
mV
CEsat
-
-
90
200
300
650
C
B
I = 100 mA, I = 5 mA
C
B
1)
Base emitter saturation voltage-
I = 10 mA, I = 0.5 mA
V
BEsat
-
-
700
900
-
-
C
B
I = 100 mA, I = 5 mA
C
B
1)
Base-emitter voltage-
I = 2 mA, V = 5 V
V
BE(ON)
580
-
660
-
750
820
C
CE
I = 10 mA, V = 5 V
C
CE
1
Pulse test: t 300µs, D = 2%
2011-10-05
3
BC846PN/UPN_BC847PN
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics
-
250
1.5
8
-
-
-
MHz
pF
Transition frequency
f
T
I = 10 mA, V = 5 V, f = 100 MHz
C
CE
-
-
Collector-base capacitance
= 10 V, f = 1 MHz
C
C
cb
V
CB
Emitter-base capacitance
= 0.5 V, f = 1 MHz
eb
V
EB
Short-circuit input impedance
I = 2 mA, V = 5 V, f = 1 kHz
h
h
h
h
-
-
-
-
4.5
2
-
-
-
-
kΩ
11e
12e
21e
22e
C
CE
-4
Open-circuit reverse voltage transf. ratio
I = 2 mA, V = 5 V, f = 1 kHz
10
C
CE
Short-circuit forward current transf. ratio
I = 2 mA, V = 5 V, f = 1 kHz
330
30
-
C
CE
Open-circuit output admittance
I = 2 mA, V = 5 V, f = 1 kHz
µS
C
CE
2011-10-05
4
BC846PN/UPN_BC847PN
DC current gain h = ƒ(I )
Collector-emitter saturation voltage
FE
C
V
= 5 V
I = ƒ(V
), h = 20
CE
C
CEsat
FE
EHP00365
EHP00367
10 2
103
mA
5
100 C
h FE
Ι C
100 C
25 C
-50 C
25 C
-50 C
101
5
102
5
101
5
100
5
10 -1
0
100
10-2
5 10 -1
5 10 0
5 101
10 2
mA
0.1
0.2
0.3
0.4
V
0.5
Ι C
VCEsat
Base-emitter saturation voltage
Collector cutoff current I
= ƒ(T )
CBO A
I = ƒ(V
), h = 20
V
= 30 V
C
BEsat
FE
CBO
EHP00381
EHP00364
10 4
nA
102
ΙCB0
Ι C
mA
10 3
5
100
25
-50
C
C
C
101
5
max
10 2
5
typ
10 1
5
100
5
100
5
10-1
10 -1
0
0.2
0.4
0.6
0.8
V
1.2
0
50
100
150
C
VBEsat
TA
2011-10-05
5
BC846PN/UPN_BC847PN
Transition frequency f = ƒ(I )
Collector-base capacitance C = ƒ(V
)
T
C
cb
CB
V
= 5 V, f = 100 MHz
Emitter-base capacitance C = ƒ(V )
CE
eb EB
EHP00363
103
12
pF
MHz
5
f T
10
9
8
7
6
5
4
3
2
1
0
102
5
CEB
CCB
22
101
V
0
4
8
12
16
10-1
5
10 0
5
101
10 2
mA
V
(V
CB EB
Ι C
Total power dissipation P = ƒ(T )
Total power dissipation P = ƒ(T )
tot S
tot
S
BC846PN, BC847PN
BC846UPN
300
mW
300
mW
250
225
200
175
150
125
100
75
250
225
200
175
150
125
100
75
50
50
25
25
0
0
°C
°C
0
15 30 45 60 75 90 105 120
150
0
15 30 45 60 75 90 105 120
150
T
T
S
S
2011-10-05
6
BC846PN/UPN_BC847PN
Permissible Pulse Load R
BC846PN, BC847PN
= ƒ(t )
Permissible Pulse Load
P /P = ƒ(t )
totmax totDC
thJS
p
p
BC846PN, BC847PN
10 3
K/W
10 3
-
10 2
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
0.5
0.2
0.2
0.5
0.1
10 1
0.05
0.02
0.01
0.005
D = 0
10 0
10 -1
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
Permissible Puls Load R
BC846UPN
= ƒ (t )
Permissible Pulse Load
P /P = ƒ(t )
totmax totDC
thJS
p
p
BC846UPN
10 3
K/W
10 3
D=0
0.005
0.01
0.02
0.05
0.1
10 2
10 2
0.2
10 1
10 0
10 -1
D=0.5
0.2
0.5
0.1
0.05
0.02
0.01
0.005
0
10 1
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
2011-10-05
7
Package SC74
BC846PN/UPN_BC847PN
Package Outline
0.2
2.9
B
1.1 MAX.
(2.25)
+0.1
0.15
(0.35)
-0.06
6
1
5
2
4
3
+0.1
A
0.35
0.95
-0.05
M
0.2
B 6x
Pin 1
marking
0.1 MAX.
M
0.2
A
1.9
Foot Print
0.5
0.95
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
Pin 1 marking
Laser marking
BCW66H
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
4
0.2
3.15
1.15
Pin 1
marking
2011-10-05
8
Package SOT363
BC846PN/UPN_BC847PN
Package Outline
0.2
2
0.1
0.9
+0.1
-0.05
6x
0.2
0.1 MAX.
0.1
M
0.1
A
6
1
5
4
3
2
Pin 1
marking
+0.1
0.15
-0.05
0.65 0.65
M
0.2
A
Foot Print
0.3
0.65
0.65
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
Pin 1 marking
Laser marking
BCR108S
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
4
0.2
1.1
2.15
Pin 1
marking
2011-10-05
9
BC846PN/UPN_BC847PN
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2011-10-05
10
相关型号:
BC847PNH6727XTSA1
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SOT-363, 6 PIN
INFINEON
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