BC847PNQ-7R-F [DIODES]
Small Signal Bipolar Transistor,;
| 型号： | BC847PNQ-7R-F |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：435K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC847PNQ
COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363
Description
Mechanical Data
This Bipolar Junction Transistor (BJT) is designed to meet the
stringent requirements of Automotive Applications.
Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Finish.
Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (Approximate)
Features
Epitaxial Die Construction
Two Internally Isolated NPN/PNP Transistors in One Package
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
SOT363
C1
E1
B2
B1
E2
C2
Top View
Device Schematic
Top View
Ordering Information (Notes 4 & 5)
Part Number
BC847PNQ-7-F
BC847PNQ-7R-F
Compliance
Automotive
Automotive
Marking
K7P
K7P
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
3,000
7
7
8
8
3,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
K7P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
Date Code Key
2015
2021
2022
Year
2016
2017
2018
2019
2020
Code
C
D
E
F
G
H
I
J
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
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June 2016
© Diodes Incorporated
BC847PNQ
Document number: DS38982 Rev. 1 - 2
BC847PNQ
Absolute Maximum Ratings: NPN, BC847B Type (Q1) (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Value
50
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
45
V
6
V
100
200
200
mA
mA
mA
Peak Collector Current
Peak Emitter Current
ICM
IEM
Absolute Maximum Ratings: PNP, BC857B Type (Q2) (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Value
-50
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-45
V
-6
V
-100
-200
-200
mA
mA
mA
Peak Collector Current
Peak Emitter Current
ICM
IEM
Thermal Characteristics – Total Device (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 6) Total Device
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
PD
Value
200
Unit
mW
°C/W
°C
625
R
JA
-65 to +150
TJ, TSTG
Note:
6. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR-4 PCB; the device is measured
under still air conditions whilst operating in a steady-state.
Thermal Characteristics – Total Device
250
200
150
100
50
0
0
40
80
120
160
200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Power Derating Curve (Total Device)
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June 2016
© Diodes Incorporated
BC847PNQ
Document number: DS38982 Rev. 1 - 2
BC847PNQ
Electrical Characteristics: NPN, BC847B Type (Q1) (@TA = +25°C, unless otherwise specified.)
Characteristic (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Symbol
BVCBO
BVCEO
BVEBO
hFE
Min
50
Typ
—
Max
—
Unit
V
Test Condition
IC = 100µA
45
—
—
V
IC = 10mA
IE = 100µA
6
—
—
V
200
290
450
—
VCE = 5.0V, IC = 2.0mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 10mA
VCB = 30V
90
200
250
600
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
—
—
mV
mV
mV
VCE(SAT)
VBE(SAT)
VBE(ON)
ICBO
700
900
—
580
—
660
—
700
720
—
—
—
—
15
5.0
nA
µA
Collector-Cutoff Current
VCB = 30V, TA = +150°C
VCE = 5.0V, IC = 10mA,
f = 100MHz
Gain Bandwidth Product
100
300
3.5
—
MHz
pF
fT
Collector-Base Capacitance
—
6.0
CCBO
VCB = 10V, f = 1.0MHz
VCE = 5V, IC = 200µA,
Rg = 2.0kΩf = 1.0kHz,
f = 200Hz
Noise Figure
NF
—
2.0
10
dB
Note:
7. Short duration pulse test used to minimize self-heating effect.
1,000
0.5
IC
IB = 20
0.4
0.3
0.2
100
TA = 100°C
10
TA = 25°C
0.1
0
TA = -50°C
1
0.01
0.1
1.0
10
100
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 3. Typical Collector-Emitter Saturation Voltage
vs. Collector Current (BC847B Type)
Figure 2. Typical DC Current Gain vs. Collector Current
(BC847B Type)
1,000
TA = 25°C
f = 1MHz
VCE = 10V
VCE =5V
10
VCE = 2V
100
C
6
ibo
C
obo
10
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (V)
Figure 4. Typical Capacitance Characteristics (BC847B Type)
Figure 5. Typical Gain-Bandwidth Product
vs. Collector Current (BC847B Type)
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June 2016
© Diodes Incorporated
BC847PNQ
Document number: DS38982 Rev. 1 - 2
BC847PNQ
Electrical Characteristics: PNP, BC857B Type (Q2) (@TA = +25°C unless otherwise specified.)
Characteristic (Note 8)
Collector-Base Breakdown Voltage
Symbol
BVCBO
BVCEO
BVEBO
hFE
Min
-50
-45
-6
Typ
—
Max
—
Unit
V
Test Condition
IC = -100µA
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
—
—
V
IC = -10mA
IE = -100µA
—
—
V
220
290
475
—
VCE = -5.0V, IC = -2.0mA
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -10mA
VCB = -30V
-75
-250
-300
-650
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
—
—
mV
mV
mV
VCE(SAT)
VBE(SAT)
VBE(ON)
ICBO
-700
-850
—
-950
-600
—
-650
—
-750
-820
—
—
—
—
-15
-4.0
nA
µA
Collector-Cutoff Current
VCB = -30V, TA = +150°C
VCE = -5.0V, IC = -10mA,
f = 100MHz
Gain Bandwidth Product
100
200
3
—
MHz
pF
fT
Collector-Base Capacitance
—
4.5
CCBO
VCB = -10V, f = 1.0MHz
VCE = -5V, IC = -200µA,
Rg = 2.0kΩf = 1.0kHz,
f = 200Hz
Noise Figure
NF
—
—
10
dB
Note:
8. Short duration pulse test used to minimize self-heating effect.
-1,000
-0.5
-0.4
IC
IB
= 10
-100
-0.3
-0.2
TA = 25°
°C
-10
-1
TA = 150
°C
-0.1
0
TA = -50
°C
-1,000
-0.1
-1
-10
-100
-1
-10
-100
-1,000
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. Typical Collector-Emitter Saturation Voltage
vs. Collector Current (BC857B Type)
Figure 6. Typical DC Current Gain vs. Collector Current
(BC857B Type)
-1,000
-100
-10
f = 1MHz
10
Cibo
6
Cobo
-10
-1
-100
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (V)
Figure 8. Typical Capacitance Characteristics (BC857B Type)
Figure 9. Typical Gain-Bandwidth Product
vs. Collector Current (BC857B Type)
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June 2016
© Diodes Incorporated
BC847PNQ
Document number: DS38982 Rev. 1 - 2
BC847PNQ
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT363
SOT363
Dim Min Max
A1 0.00 0.10
A2 0.90 1.00
Typ
0.05
1.00
0.25
0.11
2.15
2.10
1.30
E
E1
b
c
D
E
0.10 0.30
0.10 0.22
1.80 2.20
2.00 2.20
F
E1 1.15 1.35
b
e
F
L
a
0.650 BSC
0.40 0.45 0.425
D
0.25 0.40
0.30
--
0° 8°
All Dimensions in mm
A2
c
a
L
e
A1
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT363
C
Value
Dimensions
(in mm)
0.650
1.300
0.420
0.600
2.500
C
G
X
Y
Y1
Y1
G
Y
X
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June 2016
© Diodes Incorporated
BC847PNQ
Document number: DS38982 Rev. 1 - 2
BC847PNQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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© Diodes Incorporated
BC847PNQ
Document number: DS38982 Rev. 1 - 2
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