BC847PN-7 [DIODES]
COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR; 互补对小信号表面贴装晶体管
| 型号： | BC847PN-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 文件： | 总3页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC847PN
COMPLEMENTARY PAIR SMALL SIGNAL SURFACE
MOUNT TRANSISTOR
Features
·
·
Epitaxial Die Construction
Two internal isolated NPN/PNP Transistors in
one package
SOT-363
Min
A
Dim
A
Max
0.30
1.35
2.20
·
Ultra-Small Surface Mount Package
C1
B2
E2
0.10
B
1.15
C
B
Mechanical Data
C
2.00
E1
B1
C2
D
·
·
Case: SOT-363, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking (See Page 3): K7P
Ordering & Date Code Information: See Page 3
Weight: 0.006 grams (approx.)
0.65 Nominal
G
H
F
0.30
1.80
¾
0.40
2.20
0.10
1.00
0.40
0.25
H
·
·
K
J
J
M
K
0.90
0.25
0.10
L
·
·
·
·
L
D
F
M
a
°8
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings
Total Device
Characteristic
Power Dissipation (Note 1)
Symbol
Pd
Value
200
Unit
mW
°C/W
°C
RqJA
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
625
Tj, TSTG
-65 to +150
@ TA = 25°C unless otherwise specified
Maximum Ratings
NPN BC847B Section
Characteristic
Symbol
Value
50
Unit
V
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
45
V
6.0
100
200
200
mA
mA
mA
ICM
Peak Collector Current
Peak Emitter Current
IEM
@ TA = 25°C unless otherwise specified
Maximum Ratings
PNP BC857B Section
Characteristic
Symbol
Value
-50
Unit
V
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
-45
-5.0
V
-100
-200
-200
mA
mA
mA
ICM
Peak Collector Current
Peak Emitter Current
IEM
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30278 Rev. 2 - 2
1 of 3
BC847PN
@ TA = 25°C unless otherwise specified
Electrical Characteristics
NPN BC847B Section
Characteristic
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE
Min
50
Typ
—
Max
—
Unit
V
Test Condition
IC = 10mA, IB = 0
C = 10mA, IB = 0
Collector-Base Breakdown Voltage (Note 2)
Collector-Emitter Breakdown Voltage (Note 2)
Emitter-Base Breakdown Voltage (Note 2)
DC Current Gain (Note 2)
I
45
—
—
V
IE = 1mA, IC = 0
6
—
—
V
VCE = 5.0V, IC = 2.0mA
200
290
450
—
I
C = 10mA, IB = 0.5mA
90
250
600
VCE(SAT)
VBE(SAT)
VBE(ON)
—
—
mV
mV
mV
Collector-Emitter Saturation Voltage (Note 2)
Base-Emitter Saturation Voltage (Note 2)
Base-Emitter Voltage (Note 2)
IC = 100mA, IB = 5.0mA
200
I
C = 10mA, IB = 0.5mA
700
900
—
IC = 100mA, IB = 5.0mA
VCE = 5.0V, IC = 2.0mA
580
—
660
—
700
720
V
V
CE =5.0V, IC = 10mA
CB = 30V
ICBO
ICBO
—
—
—
—
15
5.0
nA
µA
Collector-Cutoff Current (Note 2)
VCB = 30V, TA = 150°C
V
CE = 5.0V, IC = 10mA,
fT
Gain Bandwidth Product
100
—
300
3.5
—
MHz
pF
f = 100MHz
V
CB = 10V, f = 1.0MHz
CCBO
Collector-Base Capacitance
6.0
VCE = 5V, IC = 200µA,
Noise Figure
R
G = 2.0kW,
NF
—
2.0
10
dB
f = 1.0kHz, Df = 200Hz
@ TA = 25°C unless otherwise specified
Electrical Characteristics
PNP BC857B Section
Characteristic
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE
Min
-50
-45
-5
Typ
—
Max
—
Unit
V
Test Condition
IC = 10mA, IB = 0
Collector-Base Breakdown Voltage (Note 2)
Collector-Emitter Breakdown Voltage (Note 2)
Emitter-Base Breakdown Voltage (Note 2)
DC Current Gain (Note 2)
IC = 10mA, IB = 0
IE = 1mA, IC = 0
—
—
V
—
—
V
VCE = 5.0V, IC = 2.0mA
220
290
475
—
I
C = 10mA, IB = 0.5mA
-75
-300
-650
VCE(SAT)
VBE(SAT)
VBE(ON)
—
—
mV
mV
mV
Collector-Emitter Saturation Voltage (Note 2)
Base-Emitter Saturation Voltage (Note 2)
Base-Emitter Voltage (Note 2)
IC = 100mA, IB = 5.0mA
-250
I
C = 10mA, IB = 0.5mA
-700
-850
—
-950
IC = 100mA, IB = 5.0mA
V
CE = 5.0V, IC = 2.0mA
-600
—
-650
—
-750
-820
VCE =5.0V, IC = 10mA
V
CB = 30V
ICBO
ICBO
—
—
—
—
-15
-4.0
nA
µA
Collector-Cutoff Current (Note 2)
VCB = 30V, TA = 150°C
VCE = 5.0V, IC = 10mA,
f = 100MHz
fT
Gain Bandwidth Product
100
—
200
3
—
MHz
pF
VCB = 10V, f = 1.0MHz
CCBO
Collector-Base Capacitance
4.5
VCE = 5V, IC = 200µA,
Noise Figure
R
G = 2.0kW,
NF
—
—
10
dB
f = 1.0kHz, Df = 200Hz
Notes:
2. Short duration pulse test used to minimize self-heating effect.
DS30278 Rev. 2 - 2
2 of 3
BC847PN
(Note 3)
Ordering Information
Device
Packaging
Shipping
BC847PN-7
SOT-363
3000/Tape & Reel
Notes:
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K7P = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
K7P
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
Code
J
K
L
M
N
P
R
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30278 Rev. 2 - 2
3 of 3
BC847PN
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