ML13150-B9P [LANSDALE]
Narrowband FM Coilless Detector IF Subsystem; 窄带FM Coilless检测IF子系统
| 型号： | ML13150-B9P |
| 厂家： | 
LANSDALE SEMICONDUCTOR INC. |
| 描述： | Narrowband FM Coilless Detector IF Subsystem |
| 文件： | 总20页 (文件大小：1596K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ML13150
Narrowband FM Coilless
Detector IF Subsystem
NARROWBAND FM COILLESS DETECTOR IF SUBSYSTEM FOR CELLULAR AND ANALOG APPLICATIONS
SEMICONDUCTOR TECHNICAL DATA
Legacy Device: Motorola MC13150
ML13150-A9P
PLASTIC PACKAGE
(LQFP-24)
The ML13150 is a narrowband FM IF subsystem targeted at
cellular and other analog applications. The ML13150 has an
onboard Colpitts VCO that can be crystal controlled or phased
lock for second LO in dual conversion receivers. The mixer is a
double balanced configuration with excellent third order inter-
cept. It is useful to beyond 200 MHz. The IF amplifier is split to
accommodate two low cost cascaded filters. RSSI output is
derived by summing the output of both IF sections., The quadra-
ture detector is a unique design eliminating the conventional
tunable quadrature coil.
24
1
32
ML13150-B9P
PLASTIC PACKAGE
(LQFP-32)
1
CROSS REFERENCE/ORDERING INFORMATION
PACKAGE
MOTOROLA
LANSDALE
LQFP-24
LQFP-32
MC13150FTA
MC13150FTB
ML13150-A9P
ML13150-B9P
Applications for the ML13150 include cellular, CT-1, 900 MHz
cordless telephone, data links and other radio systems utilizing
narrowband FM modulation.
Note: Lansdale lead free (Pb) product, as it
becomes available, will be identified by a part
number prefix change from ML to MLE.
• Linear Coilless Detector
• RSSI Range of Greater Than 100 dB
• Adjustable Demodulator Bandwidth
• 2.5 to 6.0 Vdc Operation
• Internal 1.4 kΩ Terminations for 455 kHz Filters
• Split IF for Improved filtering and Extended RSSI Range
• Low Drain Current <2.0 mA
• Operating Temperature Range - T = -40° to +85°C
A
• Typical Sensitivity of 2.0 µV for 12 dB SINAD
• IIP3, Input Third Order Intercept Point of 0 dBm
PIN CONNECTIONS
LQFP-24
LQFP-32
32
31
30
29
28
27 26
25
24
23
22
21
20
19
Mix
V
24
23
22
21
20
19
RSSI
Out
1
2
Mix
b
Mixer
out
RSSI
18
1
2
3
4
b
Mixer
CC1
DET
out
V
CC1
17 DET
out
V
V
(N/C)
V
V
(N/C)
3
CC
EE
IF
in
16
15
V
EE2
IF
in
4
5
EE2
IF
DET
IF
IF
Gain
d1
DET
d1
Gain
IF
V
(N/C)
6
7
8
EE
(N/C)
CC
14
13
IF
AFT
5
6
d2
Filt
Limiter
18 AFT
IF
Filt
d2
IF
Limiter
out
AFT
out
AFT
17
IF
out
out
7
8
9
10
11
12
9
10
11
12
13
14
16
15
Page 1 of 20
www.lansdale.com
Issue A
ML13150
LANSDALE Semiconductor, Inc.
MAXIMUM RATINGS
Rating
Pin
Symbol
V (max)
CC
Value
6.5
Unit
Vdc
C
Power Supply Voltage
Junction Temperature
Storage Temperature Range
2, 9
-
-
T
Jmax
+150
T
stg
-65 to +150
C
NOTE: 1. Devices should not be operated at or outside these values. The “Recommended Operating
Limits” provide for actual device operation.
2. ESD data available upon request.
RECOMMENDED OPERATING CONDITIONS
Rating
Power Supply Voltage
Pin
Symbol
Value
Unit
T
T
A
= 25 C
2, 9
21, 31
V
V
EE
2.5 to 6.0
0
Vdc
A
CC
–40 C
85
C
(See Figure 22)
Input Frequency
32
-
f
in
10 to 500
-40 to +85
0
MHz
C
Ambient Temperature Range
Input Signal Level
T
A
32
V
in
dBm
DC ELECTRICAL CHARACTERISTICS (T = 25 C, V
= V = 3.0 Vdc, No Input Signal.)
CC2
A
CC1
Pin
Characteristics
Condition
Symbol
Min
Ty p
Max
Unit
Total Drain Current
(See Figure 2)
V
S
= 3.0 Vdc
2 + 9
I
-
1.7
3.0
mA
TOTAL
Supply Current, Power Down
(See Figure 3)
-
2 + 9
-
-
40
-
nA
AC ELECTRICAL CHARACTERISTICS (T = 25 C, V = 3.0 Vdc, f
LO Level = –10 dBm, see Figure 1 Test Circuit*, unless otherwise specified.)
= 50 MHz, f
= 50.455 MHz,
LO
A
S
RF
Characteristics
Condition
= 1.0 kHz;
Pin
Symbol
Min
Ty p
Max
Unit
12 dB SINAD Sensitivity
(See Figure 15)
f
f
32
-
-
–100
-
dBm
mod
=
5.0 kHz
dev
RSSI Dynamic Range
(See Figure 7)
-
25
-
-
100
-
dB
Input 1.0 dB Compression Point
Input 3rd Order Intercept Point
(See Figure 18)
-
-
-
-
1.0 dB C. Pt.
IIP3
-
-
-11
-1.0
-
-
dBm
Coilless Detector Bandwidth
Adjust (See Figure 11)
Measured with No IF Filters
-
∆BW adj
-
-
26
10
-
-
kHz/µA
MIXER
Conversion Voltage Gain
(See Figure 5)
P
in
= -30 dBm;
32
-
dB
PLO = -10 dBm
Mixer Input Impedance
Mixer Output Impedance
LOCAL OSCILLATOR
Single-Ended
-
32
1
-
-
-
-
200
1.5
-
-
Ω
kΩ
LO Emitter Current
(See Figure 26)
-
29
-
30
63
100
µA
IF & LIMITING AMPLIFIERS SECTION
IF and Limiter RSSI Slope
Figure 7
25
4, 8
4, 8
10
-
-
-
-
-
-
-
-
-
-
0.4
42
-
-
-
-
-
µA/dB
dB
IF Gain
Figure 8
IF Input & Output Impedance
Limiter Input Impedance
Limiter Gain
-
-
-
1.5
1.5
96
kΩ
kΩ
-
dB
* Figure 1 Test Circuit uses positive (V ) Ground.
CC
Page 2 of 20
www.lansdale.com
Issue A
LANSDALE Semiconductor, Inc.
ML13150
AC ELECTRICAL CHARACTERISTICS (continued) (T = 25°C, V = 3.0 Vdc, f
LO Level = -10 dBm, see Figure 1 Test Circuit*, unless otherwise specified.)
= 50 MHz, f
= 50.455 MHz,
LO
A
S
RF
Characteristics
DETECTOR
Condition
Pin
Symbol
Min
Typ
Max
Unit
Frequency Adjust Current
Frequency Adjust Voltage
Bandwidth Adjust Voltage
Figure 9,
16
16
15
23
23
-
-
-
-
-
41
600
-
49
56
700
-
µA
f
f
= 455 kHz
IF
Figure 10,
= 455 kHz
650
570
1.36
122
mVdc
mVdc
Vdc
IF
Figure 12,
I
= 1.0 µA
15
Detector DC Output Voltage
(See Figure 25)
-
-
-
Recovered Audio Voltage
f
=
3.0 kHz
85
175
mVrms
dev
* Figure 1 Test Circuit uses positive (V ) Ground.
CC
Figure 1. Test Circuit
LO Input
V
EE1
10
1:4
µ
220 n
+
100 n
Enable
RSSI
Z Xformer
Mixer
In
49.9
100 n
32
31
30
29
28
27
26
25
V
EE1
220 n
1.5 k
RSSI
Buffer
Mixer
Out
24
23
22
21
20
19
18
17
1
Mixer
Detector
Output
2
3
4
5
6
7
8
V
CC1
Local
Oscillator
RSSI
Buffer
100 p
R
100 k
L
IF
In
220 n
V
EE2
49.9
220 n
R
100 k
S
220 n
(6)
V
IF
EE2
220 n
10 µ
+
220 n
V18–V17 = 0;
100 k
Limiter
220 n
f
= 455 kHz
IF
IF Amp
Out
V
CC2
10
9
11
12
13
14
15
16
1.5 k
220 n
220 n
Limiter
In
I15
I16
220 n
220 n
49.9
This device contains 292 active transistors.
Page 3 of 20
www.lansdale.com
Issue A
ML13150
LANSDALE Semiconductor, Inc.
ML13150 CIRCUIT DESCRIPTION
The buffered output of the mixer is internally loaded,
GENERAL DESCRIPTION
The ML13150 is a very low power single conversion nar- resulting in an output impedance of 1.5kΩ.
rowband FM receiver incorporating a split IF. This device
LOCAL OSCILLATOR
can be used as a single conversion or as the backend in
analog narrowband FM systems such as 900 MHz cord- The on–chip transistor operates with crystal and LC
less phones, and narrowband data links with data rates up resonant elements up to 220 MHz. Series resonant,
to 9.6 k baud. It contains a mixer, oscillator, extended
range received signal strength indicator (RSSI), RSSI
overtone crystals are used to achieve excellent local
oscillator stability. 3rd overtone crystals are used through
buffer, IF amplifier, limiting IF, a unique coilless quadra- about 65 to 70 MHz. Operation for 70 MHz up to 200
ture detector and a device enabler function (see Package
Pin Outs/Block Diagram).
MHz is feasible using the on–chip transistor with a 5th or
7th overtone crystal. To enhance operation using an
overtone crystal, the internal transistor's bias is increased
by adding an external resistor from Pin 29 (in 32 pin QFP
LOW CURRENT OPERATION
The ML13150 is designed for battery and portable
applications. Supply current is typically 1.7 mAdc at 3.0
Vdc. Figure 2 shows the supply current versus supply
voltage.
package) to V to keep the oscillator on continuously or
EE
it may be taken to the enable pin to shut is off when the
receiver is disabled. –10 dBm of local oscillator drive is
needed to adequately drive the mixer (Figure 6). The
oscillator configurations specified above are described in
the application section.
ENABLE
The enable function is provided for battery powered
operation. The enabled pin is pulled down to enable the
regulators. Figure 3 shows the supply current versus
RSSI
The received signal strength indicator (RSSI) output is a
current proportional to the log of the received signal
enable voltage, V
enable
(relative to V ) needed to
CC
enable the device. Note that the device is fully enabled at amplitude. The RSSI current output is derived by
V
- 1.3 Vdc. Figure 4 shows the relationship of the
summing the currents from the IF and limiting amplifier
stages. An external resistor at Pin 25 (in 32 pin QFP
package) sets the voltage range or swing of the RSSI
output voltage. Linearity of the RSSI is optimized by
using external ceramic bandpass filters which have an
insertions loss of 4.0 dB. The RSSI circuit is designed to
CC
enable current, I
to enable voltage, V .
enable
enable,
MIXER
The mixer is a double-balanced four quadrant multiplier
and is designed to work up to 500 MHz. It has a single
ended input. Figure 5 shows the mixer gain and saturated provide 100+ dB of dynamic range with temperature
output response as a function of input signal drive and for compensation (see Figures 7 and 23 which show the RSSI
–10 dBm LO drive level. This is measured in the applica- response of the applications circuit).
tion circuit shown in Figure 15 in which a single LC
RSSI BUFFER
matching network is used. Since the single–ended input
impedance of the mixer is 200 Ω, and alternate solution
uses a 1:4 impedance transformer to match the mixer to
50 Ω input impedance. The linear voltage gain of the
mixer alone is approximately 4.0 dB (plus an additional
6.0 dB for the transformer). Figure 6 shows the mixer
gain versus the LO input level for various mixer input
levels at 50 MHz RF input.
The RSSI buffer has limitations in what loads it can
drive. It can pull loads well towards the positive and
negative supplies, but has problems pulling the load away
from the supplies. The load should be biased at half
supply to overcome this situation.
Page 4 of 20
www.lansdale.com
Issue A
LANSDALE Semiconductor, Inc.
ML13150
Figure 2. Supply Current
versus Supply Voltage
Figure 3. Supply Current
versus Enable Voltage
–2
–3
–4
2.0
1.6
1.2
0.8
10
10
10
V
= 3.0 Vdc
CC
T
= 25°C
A
V
Measured
CC
ENABLE
Relative to V
–5
–6
–7
10
10
10
–8
–9
10
0.4
0
T
= 25°C
A
10
–10
10
1.5
2.5
3.5
4.5
5.5
6.5
7.5
0.5
0.7
0.9
1.1
1.3
1.5
V
, SUPPLY VOLTAGE (Vdc)
V
ENABLE
, ENABLE VOLTAGE (Vdc)
ENABLE
Figure 4. Enable Current
versus Enable Voltage
Figure 5. Mixer IF Output Level versus
RF Input Level
70
60
50
40
30
20
10
V
= 3.0 Vdc
V
T
= –3.0 Vdc
= 25°C
CC
= 25°C
EE
T
A
A
0
–10
–20
–30
20
10
f
= 50 MHz; f
= 50.455 MHz
RF
LO
LO Input Level = –10 dBm
(100 mVrms)
–40
–50
0
(R = 50
Ω; R
= 1.4 kΩ
in
out
–10
0
0.4
0.8
1.2
1.6
2.0
–50
–40
–30
–20
–10
0
10
20
V
, ENABLE VOLTAGE (Vdc)
RF INPUT LEVEL (dBm)
ENABLE
Figure 6. Mixer IF Output Level versus
Local Oscillator Input Level
Figure 7. RSSI Output Current
versus Input Signal Level
20
0
50
RF In = 0 dBm
= –3.0 Vdc
V
= 3.0 Vdc
V
T
CC
f = 50 MHz
= 50.455 MHz
EE
= 25°C
40
30
20
A
–20 dBm
f
LO
455 kHz
Ceramic Filter
See Figure 15
–20
–40
–40 dBm
–60
–80
10
0
f
R
= 50 MHz; f
LO
= 50.455 MHz
= 1.4 kΩ
RF
in
= 50
Ω
; R
out
–60
–50
–40
–30
LO DRIVE (dBm)
–20
–10
0
–120
–100
–80
–60
–40
–20
0
SIGNAL INPUT LEVEL (dBm)
Page 5 of 20
www.lansdale.com
Issue A
ML13150
LANSDALE Semiconductor, Inc.
IF AMPLIFIER
Overall RSSI linearity is dependent on having total midband
The first IF amplifier section is composed of three differential attenuation of 10 dB (4.0 insertion loss plus 6.0 dB
stages. This section has internal dc feedback and external
input decoupling for improved symmetry and stability. The
total gain of the IF amplifier block is approximately 42 dB at
455 kHz. Figure 8 shows the gain of the IF amplifier as a
function of the IF frequency.
impedance matching loss) for the filter. The output of the IF
amplifier is buffered and the impedance if 1.5kΩ.
LIMITER
The limiter section is similar to the IF amplifier section
except that six stages are used. The fixed internal input
The fixed internal input impedance is 1.5 kΩ; it is designed impedance is 1.5 kΩ. The total gain of the limiting
for applications where a 455 kHz ceramic filter is used and
no external output matching is necessary since the filter
requires a 1.5 kΩ source and load impedance.
amplifier sections is approximately 96 dB. This IF limiting
amplifier section internally drives the quadrature detector
section.
Figure 8. IF Amplifier Gain
Figure 9. F
Current
adj
versus IF Frequency
versus IF Frequency
50
120
100
80
V
= 3.0 Vdc
CC
Slope at 455 kHz = 9.26 kHz/
45
40
35
µA
60
V
R
R
= 100 µV
in
in
30
25
20
= 50
Ω
40
20
0
= 1.4 k
Ω
out
BW (3.0 dB) = 2.4 MHz
= 25°C
T
A
0.01
0.1
1.0
10
0
200
400
600
800
1000
f, FREQUENCY (MHz)
f, IF FREQUENCY (kHz)
Figure 10. F
Voltage
Current
Figure 11. BW
versus IF Frequency
Current
adj
adj
versus F
adj
800
750
3.5
3.0
2.5
2.0
V
= 3.0 Vdc
CC
= 25°C
V
= 3.0 Vdc
26 kHz/
CC
BW
T
A
µ
A
700
650
600
1.5
1.0
0.5
0
0
20
40
60
CURRENT ( A)
80
100
400
420
440
460
480
500
F
µ
f, IF FREQUENCY (kHz)
Page 6 of 20
www.lansdale.com
Issue A
LANSDALE Semiconductor, Inc.
ML13150
COILLESS DETECTOR
For example, 1.0 µA would give a band width of 13 kHz.
The quadrature detector is similar to a PLL. There is an inter- The voltage across the bandwidth resistor, RB from Figure 12
nal oscillator running at the IF frequency and two detector
outputs. One is used to deliver the audio signal and the other
one is filtered and used to tune the oscillator.
is V
CC
– 2.44 Vdc = 0.56 Vdc for V = 3.0 Vdc, so R =
CC B
0.56V/1.0 µA = 560 kΩ. Actually the locking range will be
13 kHz while the audio bandwidth wil be approximately
8.4 kHz due to an internal filter capacitor. This is verified in
Figure 13. For some applications it may be desireable that the
The oscillator frequency is set by and external resistor at the
F
pin. Figure 9 shows the control current required for a
audio bandwidth is increased; this is done by reducing R .
B
adj
particular frequency; Figure 10 shows the pin voltage at that
current. From this the value of RF is chosen. For example,
455 kHz would require a current of around 50 µA. The pin
Reducing R widens the detector bandwidth and improves
B
the distortion at high input levels at the expense of 12 dB
SINAD sensitivity. The low frequency 3.0dB point is set by
voltage (Pin 16 in the 32 pin QFP package) is around 655mV the tuning circuit such that the product
giving a resistor of 13.1 kΩ. Choosing 12 kΩ as the nearest
standard value gives a current of approximately 55 µA. The
R C = 0.68/f
.
3dB
T T
5.0 µA difference can be taken up by the tuning resistor, R .
T
So, for example, 150 kΩ and 1.0 µF give a 3.0 dB point of
The best nominal frequency for the AFTout pin (Pin 17)
would be half supply. A supply voltage of 3.0 Vdc suggests a
resistor value of (1.5 – 0.655) V/5.0 µA = 169 kΩ. Choosing
150 kΩ would give a tuning current of 3/150 kΩ = 20 µA.
From Figure 9 this would give a tuning range of roughly 10
kHz/µA or 100 kHz which should be adequate.
4.5 kHz. The recovered audio is set by R to give roughly
50mV per kHz deviation per 100 k of resistance. The dc
level can be shifted by R from the nominal 0.68 V by the
S
following equation:
L
Detector DC Output = ((R + R )/R ) 0.68 Vdc
L
S
S
The bandwidth can be adjusted with the help of Figure 11.
Thus R = R sets the output at 2 x 0.68 = 1.36 V; R =
S
L
L
2R sets the output at 3 x .068 = 2.0V.
S
Figure 12. BW
Current
Figure 13. Demodulator Output
adj
Voltage
versus BW
versus Frequency
adj
–3
10
10
V
= 3.0 Vdc
CC
= 25 C
0
T
A
–4
–5
–6
–7
R
= 560 k
10
10
10
10
B
–10
–20
–30
–40
–50
V
= 3.0 Vdc
= 25 C
= 50 MHz
= 50.455 MHz
R
= 1.0 M
CC
B
T
A
RF
LO
f
f
LO Level =–10 dBm
No IF Bandpass Filters
f
= 4.0 kHz
dev
2.3
2.5
BW
2.7
0.1
1.0
10
100
VOLTAGE (Vdc)
f, FREQUENCY (kHz)
adj
Page 7 of 20
www.lansdale.com
Issue A
ML13150
LANSDALE Semiconductor, Inc.
Legacy Applications Information
EVALUATION PC BOARD
INPUT MATCHING COMPONENTS
The evaluation PCB is very versatile and is intended to be
used across the entire useful frequency range of this device.
The input matching circuit shown in the application circuit
schematic (Figure 15) is a series L, shunt C single L section
The center section of the board provides an area for attaching which is used to match the mixer input to 50 Ω. An alterna-
all SMT components to the circuit side and radial leaded
components to the component ground side (see Figures 29
and 30). Additionally, the peripheral area surrounding the RF
core provides pads to add supporting and interface circuitry
tive input network may use 1:4 surface mount transformers or
BALUNs. The 12 dB SINAD sensitivity using the 1:4 imped-
ance transformer is typically –100 dBm for f
= 1.0 kHz
mod
= 50.455
and f
dev
= 5.0 kHz at f = 50 MHz and f
in LO
as a particular application requires. There is an area dedicated MHz (see Figure 14).
for a LNA preamp. This evaluation board will be discussed
and referenced in this section.
It is desirable to use a SAW filter before the mixer to provide
additional selectivity an adjacent channel rejection and
improved sensitivity. SAW filters sourced from Toko (Part
COMPONENT SELECTION
The evaluation PC board is designed to accommodate specif- #SWS083GBWA) and Murata (Part # SAF83.16MA51X) are
ic components, while also being versatile enough to use com- excellent choices to easily interface with the MC13150 mixer.
ponents from various manufacturers and coil types. The appli- They are packaged in a 12 pin low profile surface mount
cations circuit schematic (Figure 15) specifies particular com- ceramic package. The center frequency is 83.161 MHz and
ponents that were used to achieve the results shown in the
typical curves but equivalent components should give similar
results. Component placement views are shown in Figures 27
and 28 for the application circuit in Figure 15 and for the
83.616 MHz crystal oscillator circuit in Figure 16.
the 3.0 dB bandwidth is 30 kHz.
Figure 14. S+N+D, N+D, N, 30% AMR
versus Input Signal Level
20
10
S+N+D
0
–10
–20
–30
V
= 3.0 Vdc
= 1.0 kHz
CC
mod
dev
f
f
f
N+D
=
5.0 kHz
= 50 MHz
in
30% AMR
N
–40
–50
–60
f
= 50.455 MHz
LO
LO Level = –10 dBm
See Figure 15
–120
–100
–80
–60
–40
INPUT SIGNAL (dBm)
Page 8 of 20
www.lansdale.com
Issue A
LANSDALE Semiconductor, Inc.
ML13150
Legacy Applications Information
Figure 15. Application Circuit
(3)
LO Input
(1)
180 nH
(4)
Enable
11 p
RF/IF
Input
(5)
RSSI
100 n
51
100 n
82 k
32
V
31
30
29
28
27
26
25
V
EE1
(2)
RSSI
Buffer
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
455 kHz
IF Ceramic
Filter
Mixer
Detector
Output
CC1
RSSI
Buffer
1.0 n
R
150 k
Local
Oscillator
L
V
EE2
R
S
150 k
1.0 n
1.0 n
100 n
(6)
IF
100 n
100 n
1.0
µ
Limiter
C
T
V
CC2
10
9
11
12
13
14
15
16
150 k
R
T
100 n
100 n
455 kHz
IF Ceramic
Filter
(6)
560 k
12 k
Coilless Detector
Circuit
R
R
B
F
+
10
µ
V
CC
NOTES: 1. Alternate solution is 1:4 impedance transformer (sources include Mini Circuits, Coilcraft and Toko).
2. 455 kHz ceramic filters (source Murata CFU455 series which are selected for various bandwidths).
3. For external LO source, a 51 Ω pullup resistor is used to bias the base of the on–board transistor as shown in Figure 15.
Designer may provide local oscillator with 3rd, 5th, or 7th overtone crystal oscillator circuit. The PC board is laid out to
accommodate external components needed for a Butler emitter coupled crystal oscillator (see Figure 16).
4. Enable IC by switching the pin to V
5. The resistor is chosen to set the range of RSSI voltage output swing.
.
EE
6. Details regarding the external components to setup the coilless detector are provided in the application section.
Page 9 of 20
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Issue A
ML13150
LANSDALE Semiconductor, Inc.
Legacy Applications Information
LOCAL OSCILLATORS
A series LC network to ac ground (which is V ) is com-
CC
prised of the inductance of the base lead of on–chip transistor
and PC board traces and tap capacitors. Parasitic oscillations
HF & VHF APPLICATIONS
In the application schematic, an external sourced local oscilla- often occur in the 200 to 800 MHz range. A small resistor is
tor is utilized in which the base is biased via a 51 Ω resistor to placed in series with the base (Pin 28) to cancel the negative
V
. However, the on–chip grounded collector transistor may resistance associated with this undesired mode of oscillation.
CC
be used for HF and VHF local oscillators with higher order
overtone crystals. Figure 16 shows a 5th overtone oscillator at
Since the base input impedance is so large, a small resistor in
the range of 27 to 68 Ω has very little effect on the desired
83.616 MHz. The circuit uses a Butler overtone oscillator con- Butler mode of oscillation.
figuration. The amplifier is an emitter follower. The crystal is
driven from the emitter and is coupled to the high impedance
base through a capacitive tap network. Operation at the desired that is low enough in reactance at frequencies of 5th over-
overtone frequency is ensured by the parallel resonant circuit tones or higher to cause trouble. C has little effect near reso-
formed by the variable inductor and the tap capacitors and par- nance because of the low impedance of the crystal motional
asitic capacitances of the on–chip transistor and PC board. The arm (R -L -C ). As the tunable inductor, which forms the
The crystal parallel capacitance, C , provides a feedback path
o
o
m m m
variable inductor specified in the schematic could be replaced
with a high tolerance, high Q ceramic or air wound surface
mount component if the other components have tight enough
tolerance. A variable inductor provides an adjustment for gain
and frequency of the resonant tank ensuring lock up and
resonant tank with the tap capacitors, is tuned off the crystal
resonant frequency, it may be difficult to tell if the oscillation
is under crystal control. Frequency jumps may occur as the
inductor is tuned. In order to eliminate this behavior an induc-
tor, L , is placed in parallel with the crystal. L is chosen to
o
o
start–up of the crystal oscillator. The overtone crystal is chosen resonant with the crystal parallel capacitance, C , at the
o
with ESR of typically 80 Ω and 120 Ω maximum; if the resis- desired operation frequency. This inductor provides a feed-
tive loss in the crystal is too high the performance of oscillator back path at frequencies well below resonance; however, the
may be impacted by lower gain margins.
parallel tank network of the tap capacitors and tunable induc-
tor prevent oscillation at these frequencies.
Figure 16. ML13150 Overtone Oscillator
= 83.16 MHz; f = 83.616 MHz
f
RF
LO
5th Overtone Crystal Oscillator
(4)
0.135 µH
MC13150
+
1.0
33
µ
Mixer
28
1.0 µH
39 p
39 p
10 n
29
31
(3)
5th OT
XTAL
27 k
V
EE
V
CC
Page 10 of 20
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Issue A
LANSDALE Semiconductor, Inc.
ML13150
RECEIVER DESIGN CONSIDERATIONS
application circuit (Figure 15), the input 1.0 dB compression
point is –10 dBm and the input third order intercept (IP3) per-
formance of the system is approximately 0 dBm (see Figure
18).
The curves of signal levels at various portions of the applica-
tion receiver with respect to RF input level are shown in
Figure 17. This information helps determine the network
topology and gain blocks required ahead of the ML13150 to
achieve the desired sensitivity and dynamic range of the
receiver system. The PCB is laid out to accommodate a low
noise preamp followed by the 83.16 MHz SAW filter. In the
TYPICAL PERFORMANCE OVER TEMPERATURE
Figures 19–26 show the device performance over tempera-
ture.
Figure 17. Signal Levels versus
RF Input Signal Level
10
0
IF Output
–10
–20
Limiter
Input
RF Input
at Transformer
Input
–30
Mixer Output
Mixer
Input
–40
–50
IF Input
f
f
= 50 MHz
= 50.455 MHz; LO Level = –10 dBm
RF
LO
–60
–70
See Figure 15
–80
–70
–60
–50
–40
–30
–20
–10
0
RF INPUT SIGNAL LEVEL (dBm)
Page 11 of 20
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Issue A
ML13150
LANSDALE Semiconductor, Inc.
Figure 18. 1.0 dB Compression Point and Input
Third Order Intercept Point versus Input Power
20
1.0 dB Compression
Point = –11 dBm
V
= 3.0 Vdc
= 50 MHz
= 50.01 MHz
= 50.455 MHz
CC
RF1
RF2
f
f
f
0
–20
–40
IP3 = –0.5 dBm
LO
P
= –10 dBm
LO
See Figure 15
–60
–80
–60
–40
–20
0
20
RF INPUT POWER (dBm)
TYPICAL PERFORMANCE OVER TEMPERATURE
Figure 19. Supply Current, I
Figure 20. Supply Current, I
versus Ambient Temperature
VEE1
versus Signal Input Level
VEE2
5.0
4.5
4.0
0.35
0.3
V
f
= 3.0 Vdc
= 50 MHz
= 4.0 kHz
CC
c
V
= 3.0 Vdc
CC
f
dev
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
T
= 85°C
A
0.25
0.2
T
= 25°C
T
= –40°C
A
A
–120
–105
–90
–75
–60
–45
–30
–15
0
–40
–20
0
20
40
60
80
SIGNAL INPUT LEVEL (dBm)
T , AMBIENT TEMPERATURE (°C)
A
Page 12 of 20
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Issue A
LANSDALE Semiconductor, Inc.
ML13150
TYPICAL PERFORMANCE OVER TEMPERATURE
Figure 21. Total Supply Current
versus Ambient Temperature
Figure 22. Minimum Supply Voltage
versus Ambient Temperature
1.8
1.75
1.7
3.0
2.5
2.0
V
= 3.0 Vdc
CC
1.65
1.6
1.55
1.5
1.5
1.0
1.45
1.4
–40
–20
0
20
40
60
80
–40
–20
0
20
40
60
80
T , AMBIENT TEMPERATURE (°C)
T , AMBIENT TEMPERATURE (°C)
A
A
Figure 23. RSSI Current versus
Ambient Temperature and Signal Level
Figure 24. Recovered Audio versus
Ambient Temperature
0.7
0.65
0.6
60
50
40
30
20
V
= 3.0 Vdc
CC
= 50 MHz
f
RF
V
=
in
0 dBm
–20 dBm
0.55
0.5
–40 dBm
V
= 3.0 Vdc
RF In = –50 dBm
–60 dBm
–80 dBm
CC
f
f
f
= 50 MHz
c
= 50.455 MHz
= –4.0 kHz
10
0
–100 dBm
–120 dBm
0.45
0.4
LO
dev
–40
–20
0
20
40
60
80
100
–40
–20
0
20
40
60
80
100
T , AMBIENT TEMPERATURE (°C)
T , AMBIENT TEMPERATURE (°C)
A
A
Figure 25. Demod DC Output Voltage
versus Ambient Temperature
Figure 26. LO Current versus
Ambient Temperature
1.7
1.6
100
V
= 3.0 Vdc
V
= 3.0 Vdc
RF In = –50 dBm
= 50 MHz
= 50.455 MHz
CC
CC
RF In = –50 dBm
90
80
f
f
f
= 50 MHz
f
f
f
1.5
1.4
1.3
1.2
c
c
LO
dev
= 50.455 MHz
LO
dev
=
4.0 kHz
= 4.0 kHz
70
60
50
1.1
1.0
0.9
–40
–20
0
20
40
60
80
–40
–20
0
20
40
60
80
T , AMBIENT TEMPERATURE (°C)
T , AMBIENT TEMPERATURE (°C)
A
A
Page 13 of 20
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Issue A
ML13150
LANSDALE Semiconductor, Inc.
Legacy Applications Information
Figure 27. Component Placement View – Circuit Side
27 k
1 n
150 k
100 n
MC13150FTB
1 n
1 n
150 k
100 n
1 n
GND
V
CC
Page 14 of 20
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Issue A
ML13150
LANSDALE Semiconductor, Inc.
Legacy Applications Information
Figure 28. Component Placement View – Ground Side
V
CC
BW_adj
F_adj
DET_out
GND
455 kHz
Ceramic
Filter
455 kHz
Ceramic
Filter
RSSI
AFT_adj
455 kHz
Ceramic
Filter
455 kHz
Ceramic
Filter
1 µH
ENABLE
83.616 MHz
Xtal
135 nH
LO
Tuning
SMA
LO IN
RF1 IN
RF2 IN
3.8"
Page 15 of 20
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Issue A
ML13150
LANSDALE Semiconductor, Inc.
Legacy Applications Information
Figure 29. PCB Circuit Side View
GND
V
CC
Rev 0 3/95
MC13150
3.8"
Page 16 of 20
www.lansdale.com
Issue A
ML13150
LANSDALE Semiconductor, Inc.
Legacy Applications Information
Figure 30. PCB Ground Side View
V
CC
BW_adj
F_adj
DET_out
GND
455 kHz
Ceramic
Filter
RSSI
AFT_adj
455 kHz
Ceramic
Filter
ENABLE
Xtal
LO
Tuning
LO IN
RF1 IN
RF2 IN
3.8"
Page 17 of 20
www.lansdale.com
Issue A
ML13150
LANSDALE Semiconductor, Inc.
OUTLINE DIMENSIONS
ML13150-A9P
PLASTIC PACKAGE
CASE 977–01
(LQFP–24)
NOTES:
1
DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
4X
ISSUE O
2
3
CONTROLLING DIMENSION: MILLIMETER.
DATUM PLANE –AB– IS LOCATED AT BOTTOM OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE BOTTOM OF THE PARTING LINE.
DATUMS –T–, –U–, AND –Z– TO BE DETERMINED
AT DATUM PLANE –AB–.
DIMENSIONS S AND V TO BE DETERMINED AT
DATUM PLANE –AC–.
DIMENSIONS A AND B DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS
0.250 (0.010) PER SIDE. DIMENSIONS A AND B DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE AB.
9
0.200 (0.008) AB T–U
Z
A
4
5
6
A1
DETAIL Y
24
19
7
DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. DAMBAR PROTRUSION SHALL
NOT CAUSE THE D DIMENSION TO EXCEED
0.350 (0.014).
1
18
–T–
V1
–U–
8
9
MINIMUM SOLDER PLATE THICKNESS SHALL BE
0.0076 (0.0003).
EXACT SHAPE OF EACH CORNER IS OPTIONAL.
V
B
MILLIMETERS
MIN MAX
4.000 BSC
2.000 BSC
4.000 BSC
2.000 BSC
INCHES
MIN MAX
0.157 BSC
0.079 BSC
0.157 BSC
0.079 BSC
DIM
A
A1
B
B1
C
D
B1
13
6
1.400
1.600
0.270
1.450
0.230
0.055
0.063
0.011
0.057
0.009
0.170
1.350
0.170
0.007
0.053
0.007
E
F
7
12
G
H
J
0.500 BSC
0.020 BSC
0.050
0.090
0.500
0.150
0.200
0.700
0.002
0.004
0.020
0.006
0.008
0.028
–Z–
S1
K
M
N
P
12 REF
12 REF
S
0.090
0.160
0.004
0.006
4X
0.250 BSC
0.010 BSC
Q
R
S
1°
0.150
6.000 BSC
5°
0.250
1°
0.006
0.236 BSC
5°
0.010
0.200 (0.008) AB T–U
Z
DETAIL AD
S1
V
V1
W
X
3.000 BSC
6.000 BSC
3.000 BSC
0.200 REF
1.000 REF
0.118 BSC
0.236 BSC
0.118 BSC
0.008 REF
0.039 REF
–AB–
–AC–
0.080 (0.003) AC
M
TOP & BOTTOM
–T–, –U–, –Z–
J
N
R
C
H
E
AE
G
AE
F
D
S
S
S
0.080 (0.003)
AC T–U
Z
W
GAUGE
PLANE
Q
P
K
SECTION AEAE
0.250 (0.010)
X
DETAIL Y
DETAIL AD
Page 18 of 20
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Issue A
ML13150
LANSDALE Semiconductor, Inc.
OUTLINE DIMENSIONS
ML13150-B9P
PLASTIC PACKAGE
CASE 873–01
(LQFP–32)
ISSUE A
L
B
P
B
24
17
16
25
-A-,-B-,-D-
DETAIL A
-B-
B
-A-
L
V
F
BASE METAL
DETAIL A
J
N
32
9
1
8
D
M
S
S
-D-
0.20 (0.008)
C
A–B
D
A
SECTION B-B
VIEW ROTATED 905 CLOCKWISE
M
S
S
0.20 (0.008)
0.05 (0.002)
A–B
A–B
D
D
C
H
A–B
S
M
S
S
0.20 (0.008)
DETAIL C
M
E
C
DATUM
PLANE
-H-
-C-
SEATING
PLANE
0.01 (0.004)
H
M
MILLIMETERS
MIN MAX
6.95
6.95
1.40
INCHES
MIN MAX
G
DIM
A
B
C
D
E
7.10 0.274
7.10 0.274
1.60 0.055
0.373 0.010
1.50 0.051
0.280
0.280
0.063
0.015
0.059
–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DATUM PLANE -H- IS LOCATED AT BOTTOM OF LEAD AND IS
COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE
PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE.
4. DATUMS -A-, -B- AND -D- TO BE DETERMINED AT DATUM
PLANE -H-.
5. DIMENSIONS S AND V TO BE DETERMINED AT SEATING PLANE
-C-.
6. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.
ALLOWABLE PROTRUSION IS 0.25 (0.010) PER SIDE.
DIMENSIONS A AND B DO INCLUDE MOLD MISMATCH AND
ARE DETERMINED AT DATUM PLANE -H-.
U
0.273
1.30
F
0.273
–
0.010
0.80 BSC
0.031 BSC
G
H
J
K
L
M
N
P
Q
R
S
T
U
V
T
–
0.20
–
0.008
0.008
0.022
0.119
0.33
0.197 0.005
0.57 0.013
R
-H-
5.6 REF
0.220 REF
DATUM
PLANE
6°
8°
6°
8°
0.119
0.135 0.005
0.005
0.016 BSC
0.40 BSC
5°
10°
5°
10°
7. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003)
TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM
MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON
THE LOWER RADIUS OR THE FOOT.
K
0.15
8.85
0.15
5°
0.25 0.006
9.15 0.348
0.25 0.006
0.010
0.360
0.010
11°
Q
X
11°
9.15 0.348
1.0 REF
5°
8.85
0.360
0.039 REF
DETAIL C
X
Page 19 of 20
www.lansdale.com
Issue A
ML13150
LANSDALE Semiconductor, Inc.
Lansdale Semiconductor reserves the right to make changes without further notice to any products herein to improve reliabili-
ty, function or design. Lansdale does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights nor the rights of others. “Typical” parameters which
may be provided in Lansdale data sheets and/or specifications can vary in different applications, and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by the customer’s
technical experts. Lansdale Semiconductor is a registered trademark of Lansdale Semiconductor, Inc.
Page 20 of 20
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Issue A
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