CZT2955 [KEXIN]
2.0W Surface Mount Complementary PNP Silicon Power Transistor; 2.0W表面贴装互补PNP硅功率晶体管
| 型号： | CZT2955 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | 2.0W Surface Mount Complementary PNP Silicon Power Transistor |
| 文件： | 总1页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
2.0W Surface Mount Complementary
PNP Silicon Power Transistor
KZT2955 (CZT2955)
SOT-223
Unit: mm
Features
+0.2
3.50
-0.2
+0.2
6.50
-0.2
High current (max. 6A).
Low voltage (max. 60V).
+0.2
0.90
-0.2
+0.1
3.00
-0.1
+0.3
7.00
-0.3
4
1 Base
2 Collector
1
2
3
+0.1
0.70
-0.1
3 Emitter
2.9
4.6
4 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector - emitter votage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCER
VCEO
VEBO
IC
Rating
Unit
V
-100
-70
V
-60
V
-7
V
Collector current
-6
A
Base current
IB
-3
2
A
Power dissipation
PD
W
/W
Thermal resistance,Junctiion-to-ambient
Junction temperature
Storage temperature
R
JA
Tj
Tstg
62.5
150
-65 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
-60
-70
Typ
Max
Unit
V
Collector to emitter breakdown voltage
Collector to emitter breakdown voltage
VCEO
VCER
ICEO
ICEV
IC=-30mA
V
IC=-30mA,RBE=100
VCE=-30V
-700
1.0
A
Collctor cutoff current
Emitter cutoff current
DC current gain
VCE=-100V,VEB=-1.5V
VEB = -7.0 V
mA
m A
IEBO
-5.0
70
IC =- 4.0A; VCE =-4.0 V
IC = -6.0A; VCE = -4.0V
IC = -4.0A; IB =- 400mA
20
hFE
5.0
Collector to emitter saturation voltage
Base to emitter ON voltage
Transition frequency
VCE(sat)
-1.1
-1.5
V
V
VBE(on) VCE=-4.0V,IC=-4.0A
IC=- 500mA; VCE =-10V; f = 1.0 MHz
fT
2.5
MHz
1
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