CZT2955TR [CENTRAL]
暂无描述;
| 型号： | CZT2955TR |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | 暂无描述 晶体 晶体管 |
| 文件： | 总2页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CZT2955 PNP
CZT3055 NPN
Central
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT2955
and CZT3055 types are surface mount epoxy
molded complementary silicon transistors
manufactured by the epitaxial base process,
designed for surface mounted power amplifier
applications up to 6.0 amps.
Semiconductor Corp.
2.0W SURFACE MOUNT
COMPLEMENTARY SILICON
POWER TRANSISTOR
MARKING CODE: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (T =25°C)
A
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
V
100
70
V
V
V
V
A
A
W
CBO
CER
CEO
EBO
60
7.0
6.0
3.0
2.0
I
C
Base Current
I
B
Power Dissipation
P
D
Operating and Storage
Junction Temperature
Thermal Resistance
T ,T
stg
-65 to +150
62.5
°C
J
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
µA
mA
mA
V
I
I
I
V
V
V
=30V
700
1.0
5.0
CEO
CEV
EBO
CE
CE
EB
=100V, V =1.5V
EB
=7.0V
BV
BV
* V
* V
I =30mA, R =100Ω
BE
70
60
CER
CEO
C
I =30mA
V
C
I =4.0A, I =400mA
1.1
1.5
70
V
CE(SAT)
BE(ON)
FE
C
B
V
=4.0V, I =4.0A
V
CE
CE
CE
CE
C
* h
* h
V
V
V
=4.0V, I =4.0A
20
5.0
2.5
C
=4.0V, I =6.0A
FE
C
f
=10V, I =500mA, f=1.0MHz
MHz
T
C
* Pulsed, 2% D.C.
R3 (17-June 2004)
TM
CZT2955 PNP
CZT3055 NPN
Central
Semiconductor Corp.
2.0W SURFACE MOUNT
COMPLEMENTARY SILICON
POWER TRANSISTOR
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
DIMENSIONS
INCHES
MILLIMETERS
SYMBOL
MIN
0°
MAX
10°
MIN
0°
MAX
10°
2) COLLECTOR
3) EMITTER
4) COLLECTOR
A
B
C
D
E
F
G
H
I
0.059
0.018
0.000
0.071
---
1.50
0.45
0.00
1.80
---
0.10
0.004
MARKING CODE:
15°
15°
FULL PART NUMBER
0.009
0.248
0.114
0.130
0.264
0.024
0.014
0.264
0.122
0.146
0.287
0.033
0.23
6.30
2.90
3.30
6.70
0.60
0.35
6.70
3.10
3.70
7.30
0.85
J
K
L
0.091
0.181
2.30
4.60
M
SOT-223 (REV: R3)
R3 (17-June 2004)
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