CZT2955_10 [CENTRAL]
SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS; 表面装载互补硅功率晶体管
| 型号： | CZT2955_10 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS |
| 文件： | 总2页 (文件大小：599K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CZT2955 PNP
CZT3055 NPN
www.centralsemi.com
SURFACE MOUNT
COMPLEMENTARY
SILICON POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT2955 and
CZT3055 types are surface mount epoxy molded
complementary silicon transistors manufactured by the
epitaxial base process, designed for surface mounted
power amplifier applications up to 6.0 amps.
MARKING: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
A
Collector-Base Voltage
V
V
V
V
100
70
V
V
CBO
CER
CEO
EBO
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
60
V
7.0
V
Continuous Collector Current
Continuous Base Current
Power Dissipation
I
6.0
A
C
I
3.0
A
B
P
2.0
W
°C
°C/W
D
T
Operating and Storage Junction Temperature
Thermal Resistance
T
-65 to +150
62.5
J, stg
Θ
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
700
1.0
UNITS
μA
mA
mA
V
I
I
I
V
V
V
=30V
CEO
CEV
EBO
CE
CE
EB
=100V, V =1.5V
EB
=7.0V
5.0
BV
I =30mA, R =100Ω
70
60
CER
CEO
C
BE
BV
I =30mA
V
C
V
V
I =4.0A, I =400mA
1.1
1.5
70
V
CE(SAT)
BE(ON)
FE
C
B
V
=4.0V, I =4.0A
V
CE
CE
CE
CE
C
h
h
V
V
V
=4.0V, I =4.0A
20
5.0
2.5
C
=4.0V, I =6.0A
FE
C
f
=10V, I =500mA, f=1.0MHz
MHz
T
C
R4 (1-March 2010)
CZT2955 PNP
CZT3055 NPN
SURFACE MOUNT
COMPLEMENTARY
SILICON POWER TRANSISTORS
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
4) Collector
MARKING:
FULL PART NUMBER
R4 (1-March 2010)
www.centralsemi.com
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