CZT3019TRLEADFREE [CENTRAL]

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin,;

CZT3019TRLEADFREE


型号：	CZT3019TRLEADFREE
厂家：	CENTRAL SEMICONDUCTOR CORP
描述：	Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, 晶体晶体管
文件：	总2页 (文件大小：95K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TM

Ce n t r a l

CZT3019

S e m ic o n d u c t o r Co r p .

NPN SILICON TRANSISTOR

DESCRIPTION:

TheCENTRALSEMICONDUCTORCZT3019

typeisanNPNsilicontransistormanufactured

by the epitaxial planar process, epoxy molded

inasurfacemountpackage, designedforhigh

currentgeneralpurposeamplifierapplications.

SOT-223 CASE

o

MAXIMUM RATINGS (T =25 C)

A

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Current (Peak)

Power Dissipation

V

V

V

120

80

7.0

1.0

1.5

2.0

V

V

V

A

A

CBO

CEO

EBO

I

C

I

CM

P

W

D

Operating and Storage

Junction Temperature

Thermal Resistance

o

o

T ,T

-65 to +150

62.5

C

C/W

J stg

Θ

JA

o

ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)

A

SYMBOL

TEST CONDITIONS

MIN

MAX

10

10

UNITS

I

I

V

V

=90V

=5.0V

nA

nA

V

V

V

V

V

V

CBO

EBO

CBO

CEO

EBO

CE(SAT)

CE(SAT)

BE(SAT)

FE

FE

FE

FE

CB

EB

BV

BV

BV

V

V

V

h

h

I =100µA

120

80

7.0

C

I =30mA

C

I =100µA

E

I =150mA, I =15mA

0.2

0.5

1.1

C

B

B

B

C

I =500mA, I =50mA

C

I =150mA, I =15mA

C

V

=10V, I =0.1mA

50

90

100

50

CE

CE

CE

CE

CE

V

V

V

V

=10V, I =10mA

C

h

h

h

=10V, I =150mA

300

C

=10V, I =500mA

C

=10V, I =1.0A

15

FE

C

306

SYMBOL

TEST CONDITIONS

MIN

100

MAX

UNITS

MHz

pF

f

C

C

V

V

V

V

=10V, I =50mA, f=1.0MHz

T

ob

ib

CE

CB

EB

CE

C

=10V, I =0, f=1.0MHz

12

60

4.0

E

=0.5V, I =0, f=1.0MHz

C

pF

dB

NF

=10V, I =100µA, R =1kΩ, f=1.0kHz

C

S

All dimensions in inches (mm).

LEAD CODE:

1) BASE

2) COLLECTOR

3) EMITTER

4) COLLECTOR

R2

307

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