BAS55 [KEXIN]
High-speed diode; 高速二极管型号: | BAS55 |
厂家: | GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
描述: | High-speed diode |
文件: | 总2页 (文件大小:40K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMD Type
Diodes
High-speed diode
BAS55
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
Features
Small plastic SMD package
1
2
High switching speed: max. 6ns
Continuous reverse voltage: max. 60 V
Repetitive peak forward current: max. 600 mA.
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
1.9
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
VRRM
VR
Conditions
Min
Max
60
Unit
V
Repetitive peak reverse voltage
Continuous reverse voltage
Continuous forward current
Repetitive peak forward current
60
V
IF
Note 1
250
600
mA
mA
IFRM
square wave; Tj =25
prior to surge;
9
t = 1
s
Non-repetitive peak forward current
IFSM
A
3
t = 100
s
t = 100 ms
Tmab = 25 ; Note 1
1.7
250
+150
150
Total power dissipation
Storage temperature
Junction temperature
Note
Ptot
Tstg
Tj
mW
-65
1. Device mounted on an FR4 printed-circuit board.
1
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SMD Type
Diodes
High-speed diode
BAS55
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Symbol
Conditions
Max
1.0
Unit
V
VF
IR
IF = 200 mA;DC value; Note 1
VR = 60 V;
VR = 60 V; Tj = 150
100
100
2.5
nA
A
Reverse current
Diode capacitance
Reverse recovery time
Cd
trr
f = 1 MHz; VR = 0;
pF
when switched from IF = 400 mA to IR = 400 mA;
6
ns
V
RL = 100
;measured at IR = 40 mA;
when switched to IF = 400 mA;tr = 30 ns;
when switched to IF = 400 mA;tr = 100 ns;
2
Forward recovery voltage
Note
Vf r
1.5
1. Tamb = 25
; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board.
Marking
Marking
L5p
2
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