2SD2121-D [KEXIN]
NPN Transistors;
| 型号： | 2SD2121-D |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总2页 (文件大小：1012K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
2SD2121
TO-252
Unit: mm
+0.15
-0.15
6.50
+0.1
-0.1
2.30
+0.8
-0.7
+0.2
5.30
-0.2
0.50
■ Features
● Low frequency power amplifier
● Complementary to 2SB1407
0.127
max
+0.1
-0.1
0.80
0.1
0.1
0.60+-
1 Base
2.3
+0.15
-0.15
4.60
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
35
Unit
V
VCBO
VCEO
VEBO
35
5
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
I
C
2.5
3
A
I
CP
P
C
18
W
℃
T
J
150
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
35
35
5
Ic= 1 mA， I
Ic= 10 mA， RBE= ∞
= 1 mA， I = 0
CB= 35 V , I = 0
EB= 5V , I =0
E= 0
I
E
C
I
CBO
EBO
V
V
E
20
0.1
1
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
I
C
=2 A, I
B
=200mA
=200mA
V
C
=2 A, I
B
1.2
1.5
320
V
BE
V
V
V
CE= 2V, I
CE= 2 V, I
CE= 2V, I
C= 1.5 A
C= 500mA
60
20
DC current gain
hFE
C= 1.5 A
■ Classification of hfe(1)
Type
2SD2121-B
60-120
2SD2121-C
100-200
2SD2121-D
160-320
Range
1
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SMD Type
Transistors
NPN Transistors
2SD2121
■ Typical Characterisitics
Maximum Collector Dissipation Curve
Area of Safe Operation
30
20
10
10
iC(peak)
IC(max)
PW = 10 ms
3.0
1.0
。
0.3
0.1
Ta = 25 C
1 shot pulse
0
50
100
150
1
3
10
30
100
Case temperature TC (ϒC)
Collector to emitter voltage VCE (V)
DC Current Transfer Ratio
vs. Collector Current
Typical Output Characteristics
2.0
1.6
1.2
0.8
0.4
1,000
300
100
6
4
30
10
2 mA
VCE = 2 V
Ta = 25 C
。
。
IB = 0
3
Ta = 25 C
0
1
2
4
5
0.03
0.1
0.3
1.0
3.0
Collector to emitter voltage VCE (V)
Collector current IC (A)
Collector to Emitter Saturation Voltage
vs. Collector Current
Typical Transfer Characteristics
2.0
1.0
1.6
1.2
0.8
0.4
0.3
0.1
0.03
0.01
VCE = 2 V
。
IC = 10 IB
Ta = 25 C
Ta = 25 C
。
0.03
0.1
0.3
1.0
3.0
0
0.4
0.8
1.2
1.6
2.0
Collector current IC (A)
Base to emitter voltage VBE (V)
2
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