2SD2121L [RENESAS]

Silicon NPN Epitaxial; NPN硅外延
2SD2121L
型号: 2SD2121L
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

Silicon NPN Epitaxial
NPN硅外延

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contained therein.  
2SD2121(L)/(S)  
Silicon NPN Epitaxial  
ADE-208-925 (Z)  
1st. Edition  
September 2000  
Application  
Low frequency power amplifier complementary pair with 2SB1407(L)/(S)  
Outline  
DPAK  
4
4
1
2
1. Base  
3
2. Collector  
3. Emitter  
4. Collector  
S Type  
1
2
3
L Type  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
35  
35  
V
5
V
2.5  
A
Collector peak current  
Collector power dissipation  
Junction temperature  
Storage temperature  
Note: 1. Value at TC = 25°C.  
IC(peak)  
PC*1  
Tj  
3
A
18  
W
°C  
°C  
150  
Tstg  
–55 to +150  
2SD2121(L)/(S)  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
Test conditions  
Collector to base breakdown  
voltage  
V(BR)CBO  
35  
35  
5
V
IC = 1 mA, IE = 0  
Collector to emitter breakdown V(BR)CEO  
voltage  
V
IC = 10 mA, RBE = ∞  
Emitter to base breakdown  
voltage  
V(BR)EBO  
V
IE = 1 mA, IC = 0  
Collector cutoff current  
DC current transfer ratio  
ICBO  
60  
20  
20  
µA  
VCB = 35 V, IE = 0  
1
hFE1  
hFE2  
VBE  
*
320  
VCE = 2 V, IC = 0.5 A*2  
VCE = 2 V, IC = 1.5 A*2  
VCE = 2 V, IC = 1.5 A*2  
IC = 2 A, IB = 0.2 A*2  
Base to emitter voltage  
1.5  
1.0  
V
V
Collector to emitter saturation VCE(sat)  
voltage  
Notes: 1. The 2SD2121(L)/(S) is grouped by hFE1 as follows.  
B
C
D
60 to 120  
100 to 200 160 to 320  
2. Pulse test.  
Maximum Collector Dissipation Curve  
Area of Safe Operation  
30  
20  
10  
10  
iC(peak)  
PW = 10 ms  
3.0  
1.0  
IC(max)  
0.3  
0.1  
Ta = 25°C  
1 shot pulse  
0
50  
100  
150  
1
3
10  
30  
100  
Case temperature TC (°C)  
Collector to emitter voltage VCE (V)  
2
2SD2121(L)/(S)  
DC Current Transfer Ratio  
vs. Collector Current  
Typical Output Characteristics  
2.0  
1.6  
1.2  
0.8  
0.4  
1,000  
300  
100  
6
4
30  
10  
2 mA  
VCE = 2 V  
Ta = 25°C  
I
B = 0  
3
Ta = 25°C  
0
1
2
4
5
0.03  
0.1  
0.3  
1.0  
3.0  
Collector to emitter voltage VCE (V)  
Collector current IC (A)  
Collector to Emitter Saturation Voltage  
vs. Collector Current  
Typical Transfer Characteristics  
2.0  
1.0  
1.6  
1.2  
0.8  
0.4  
0.3  
0.1  
0.03  
0.01  
VCE = 2 V  
Ta = 25°C  
IC = 10 IB  
Ta = 25°C  
0.03  
0.1  
0.3  
1.0  
3.0  
0
0.4  
0.8  
1.2  
1.6  
2.0  
Collector current IC (A)  
Base to emitter voltage VBE (V)  
3
2SD2121(L)/(S)  
When using this document, keep the following in mind:  
1. This document may, wholly or partially, be subject to change without notice.  
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of  
this document without Hitachi’s permission.  
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any  
other reasons during operation of the user’s unit according to this document.  
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and  
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual  
property claims or other problems that may result from applications based on the examples described  
herein.  
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Hitachi, Ltd.  
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APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.  
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are  
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APPLICATIONS.  
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Fax: (03) 3270-5109  
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U S A  
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Continental Europe  
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München  
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United Kingdom  
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Tsim Sha Tsui, Kowloon  
Hong Kong  
Tel: 0628-585000  
Fax: 0628-778322  
Tel: 27359218  
Fax: 27306071  
4

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