2SD2121L [HITACHI]
Silicon NPN Epitaxial; NPN硅外延
| 型号： | 2SD2121L |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon NPN Epitaxial |
| 文件： | 总5页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD2121(L)/(S)
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB1407(L)/(S)
Outline
DPAK
4
4
1
2
1. Base
3
2. Collector
3. Emitter
4. Collector
S Type
1
2
3
L Type
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
35
35
V
5
V
2.5
A
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
IC(peak)
PC*1
Tj
3
A
18
W
°C
°C
150
Tstg
–55 to +150
2SD2121(L)/(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
35
35
5
—
—
V
IC = 1 mA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
—
—
—
—
V
IC = 10 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
V
IE = 1 mA, IC = 0
Collector cutoff current
DC current transfer ratio
ICBO
—
60
20
—
—
—
—
—
—
—
20
µA
VCB = 35 V, IE = 0
1
hFE1
hFE2
VBE
*
320
—
VCE = 2 V, IC = 0.5 A*2
VCE = 2 V, IC = 1.5 A*2
VCE = 2 V, IC = 1.5 A*2
IC = 2 A, IB = 0.2 A*2
Base to emitter voltage
1.5
1.0
V
V
Collector to emitter saturation VCE(sat)
voltage
Notes: 1. The 2SD2121(L)/(S) is grouped by hFE1 as follows.
B
C
D
60 to 120
100 to 200 160 to 320
2. Pulse test.
Maximum Collector Dissipation Curve
Area of Safe Operation
30
20
10
10
iC(peak)
PW = 10 ms
3.0
1.0
IC(max)
0.3
0.1
Ta = 25°C
1 shot pulse
0
50
100
150
1
3
10
30
100
Case temperature TC (°C)
Collector to emitter voltage VCE (V)
2
2SD2121(L)/(S)
DC Current Transfer Ratio
vs. Collector Current
Typical Output Characteristics
2.0
1.6
1.2
0.8
0.4
1,000
300
100
6
4
30
10
2 mA
VCE = 2 V
Ta = 25°C
IB = 0
3
Ta = 25°C
0
1
2
4
5
0.03
0.1
0.3
1.0
3.0
Collector to emitter voltage VCE (V)
Collector current IC (A)
Collector to Emitter Saturation Voltage
vs. Collector Current
Typical Transfer Characteristics
2.0
1.0
1.6
1.2
0.8
0.4
0.3
0.1
0.03
0.01
VCE = 2 V
Ta = 25°C
IC = 10 IB
Ta = 25°C
0.03
0.1
0.3
1.0
3.0
0
0.4
0.8
1.2
1.6
2.0
Collector current IC (A)
Base to emitter voltage VBE (V)
3
Unit: mm
6.5 ± 0.5
5.4 ± 0.5
2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
1.15 ± 0.1
0.8 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
Hitachi Code
JEDEC
DPAK (L)-(1)
—
EIAJ
Conforms
Weight (reference value) 0.42 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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