2SD1733_15 [KEXIN]
NPN Transistors;
| 型号： | 2SD1733_15 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总2页 (文件大小：1001K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
2SD1733
TO-252
Unit: mm
+0.15
-0.15
6.50
+0.1
-0.1
2.30
+0.8
-0.7
+0.2
■ Features
5.30
-0.2
0.50
● High VCEO, VCEO=80V
● High IC, IC=1A (DC)
● Low VCE (sat)
0.127
max
+0.1
-0.1
0.80
● Complementary to 2SB1181
0.1
0.1
0.60+-
1 Base
2.3
4.60
+0.15
-0.15
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
Unit
VCBO
VCEO
VEBO
120
80
5
V
Collector Current - Continuous
Collector Current - Pulse
I
C
1
A
I
CP
2
Collector Power Dissipation
Tc=25°C
Ta=25°C
10
1
P
C
W
℃
Junction Temperature
T
J
150
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
120
80
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100 uA， I
Ic= 1 mA，I = 0
= 100 uA， I = 0
CB= 100 V , I = 0
EB= 4V , I =0
=500 mA, I
=500mA, I
CE= 3V, I
E= 0
B
5
I
E
C
I
CBO
EBO
V
V
E
1
uA
V
I
C
0.5
0.4
1.2
390
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
B=50 mA
0.15
V
C
B=50 mA
hFE
V
V
V
C= 500 mA
120
Collector Output capacitance
Transition frequency
C
ob
T
CB= 10V, I
CE= 10V, I
E
= 0,f=1MHz
= -50mA,f=100MHz
20
pF
f
E
100
MHz
■ Classification of hfe
Type
2SD1733-Q
120-270
2SD1733-P
180-390
Range
1
www.kexin.com.cn
SMD Type
Transistors
NPN Transistors
2SD1733
■ Typical Characterisitics
1000
Ta=25°C
Ta=25°C
Ta=25°C
CE=5V
V
6mA
5mA
4mA
1.0
0.8
0.6
0.4
100
10
1000
V
CE=3V
3mA
2mA
1V
100
0
1
1mA
0.2
0
IB=0mA
0.1
0
0
10
100
1000
(mA)
0
2
4
6
8
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : I
C
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 DC current gain vs.
collector current
Fig.2 Grounded emitter output
characteristics
Fig.1 Grounded emitter propagation
characteristics
1000
Ta=25°C
Ta=25°C
f=1MHz
Ta=25°C
VCE=5V
500
IE=0A
Ic=0A
200
100
50
2.0
100
10
1
1.0
0.5
20
10
5
0.2
I
C
/I
B
=20/1
10/1
0.1
0.05
2
0.02
0.01
1
2
5
10 20 50 100 200 5001000
0
10
100
1000
mA)
0.1 0.2 0.5
1
2
5
10 20 50 100
EMITTER CURRENT : (mA)
I
E
COLLECTOR CURRENT : I
C
(
COLLECTOR TO BASE VOLTAGE : VCB
EMITTER TO BASE VOLTAGE : VEB
(
V)
(
V)
Fig.5 Gain bandwidth product vs.
emitter current
Fig.4 Collector-emitter saturation
voltage vs. collector current
Fig.6 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
2
www.kexin.com.cn
相关型号：
©2020 ICPDF网 联系我们和版权申明