2SD1735 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | 2SD1735 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：220K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1735
DESCRIPTION
·High Voltage
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emiter Volage
Emitter-Base Voltage
VALUE
1500
1500
700
7
UNIT
V
V
V
V
Collector Current-Continuous
Collector Current-Peak
Base Current- Continuous
1.5
A
ICP
5
A
IB
0.6
A
Collector Power Dissipation
@TC=25℃
PC
60
W
℃
℃
Tj
Junction Temperature
150
-55-150
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1735
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)EBO
VCE(
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
IE= 500mA; IC= 0
7
V
V
V
IC= 1A; IB= 0.4A
IC= 1A; IB= 0.4A
IC= 0.5A; VCE= 5V
VCB= 750V; IE= 0
VCB= 1500V; IE= 0
IC= 0.5A; VCE= 10V
8.0
1.5
30
)
sat
VBE(
)
sat
hFE
6
10
μA
mA
ICBO
Collector Cutoff Current
Transition Frequency
1.0
fT
2
MHz
Switching Times, Resistive Load
Storage Time
Fall Time
1.0
0.2
μs
μs
ts
tf
IC= 1A; IB1= 0.3A; IB2= -0.6A,
VCC= 200V
isc Website：www.iscsemi.cn
相关型号：
2SD1741AH
Power Bipolar Transistor, 2A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
PANASONIC
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