2SC2404 [KEXIN]
Silicon PNP Epitaxial Planar Type; PNP硅外延平面型
| 型号： | 2SC2404 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Silicon PNP Epitaxial Planar Type |
| 文件： | 总1页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Silicon PNP Epitaxial Planar Type
2SC2404
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
Features
Optimum for RF amplification of FM/AM radios
High transition frequency fT
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
-0.1
1.9
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine packing
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
30
Collector-emitter voltage
Emitter-base voltage
Collector current
20
V
3
15
V
mA
mW
Collector power dissipation
Junction temperature
Storage temperature
PC
150
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Emitter-base voltage
Base-emitter voltage
Forward current transfer ratio
Transition frequency
Reverse transfer capacitance
Power gain
Symbol
Testconditons
IC = 10 ìA, IE = 0
Min
30
3
Typ
Max
Unit
V
VCBO
VEBO
VBE
hFE
fT
IE = 10 ìA, IC = 0
V
VCB = 6 V, IE = -1 mA
VCB = 6 V, IE = -1 mA
0.72
V
65
260
1.0
VCB = 6 V, IE = -1 mA, f = 100 MHz
VCB= 6 V, IE = -1 mA, f = 10.7 MHz
VCB= 6 V, IE = -1 mA, f = 100 MHz
VCB= 6 V, IE = -1 mA, f = 100 MHz
450
650
0.8
24
MHz
pF
Cre
GP
dB
Noise figure
NF
3.3
dB
hFE Classification
U
Marking
Rank
hFE
C
D
65 160
100 260
1
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