2SC2405 [KEXIN]
Silicon PNP Epitaxial Planar Type; PNP硅外延平面型
| 型号： | 2SC2405 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Silicon PNP Epitaxial Planar Type |
| 文件： | 总1页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Silicon PNP Epitaxial Planar Type
2SC2405
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
Features
3
Low noise voltage NV.
High forward current transfer ratio hFE.
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing.
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
35
Collector-emitter voltage
Emitter-base voltage
Collector current
35
V
5
50
V
mA
mA
mW
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
ICP
100
PC
200
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
IC = 10 ìA, IE = 0
Min
35
35
5
Typ
0.7
Max
Unit
V
Collector-base voltage
VCBO
VCEO
VEBO
VBE
Collector-emitter voltage
Emitter-base voltage
IC = 2 mA, IB = 0
V
IE = 10 ìA, IC = 0
VCE = 1 V, IC = 100 mA
VCB = 10 V, IE = 0
VCE = 10 V, IB = 0
VCE = 5 V, IC = 2 mA
V
Base-emitter voltage
1.0
0.1
1
V
Collector-base cutoff current
Collector-emitter cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
ICBO
ICEO
hFE
ìA
ìA
180
700
0.6
VCE(sat) IC = 100 mA, IB = -10 mA
V
fT
VCB = 5 V, IE = -2 mA, f = 200 MHz
VCE = 10 V, IC = 1 mA, GV = 80 dB
Rg = 100 kÙ, Function = FLAT
200
110
MHz
mV
Noise voltage
NV
hFE Classification
Marking
hFE
SR
SS
ST
360 700
180 360
260 520
1
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