2SC2404B [ETC]
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 15MA I(C) | TO-236 ; 晶体管| BJT | NPN | 20V V（ BR ） CEO | 15MA I（C ） | TO- 236\n
| 型号： | 2SC2404B |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 15MA I(C) | TO-236
|
| 文件： | 总4页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SC2404
Silicon NPN epitaxial planer type
For high-frequency amplification
Unit: mm
2.8 +–00..32
1.5 +–00..0255
0.65±0.15
Features
0.65±0.15
■
●
Optimum for RF amplification of FM/AM radios.
●
High transition frequency fT.
1
2
●
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
3
Absolute Maximum Ratings (Ta=25˚C)
■
0.1 to 0.3
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
0.4±0.2
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
30
20
V
3
15
V
1:Base
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
2:Emitter
3:Collector
mA
mW
˚C
Collector power dissipation
Junction temperature
Storage temperature
PC
150
Tj
150
Marking symbol : U
Tstg
–55 ~ +150
˚C
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
VCBO
Conditions
min
30
3
typ
max
260
1
Unit
V
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Transition frequency
IC = 10µA, IE = 0
VEBO
IE = 10µA, IC = 0
V
*
hFE
VCB = 6V, IE = –1mA
40
VBE
fT
V
CB = 6V, IE = –1mA
0.72
650
0.8
24
V
MHz
pF
VCB = 6V, IE = –1mA, f = 100MHz
VCE = 6V, IC = 1mA, f = 10.7MHz
VCB = 6V, IE = –1mA, f = 100MHz
VCB = 6V, IE = –1mA, f = 100MHz
450
Common emitter reverse transfer capacitance Cre
Power gain
PG
NF
dB
Noise figure
3.3
dB
*hFE Rank classification
Rank
hFE
B
C
D
100 ~ 260
UD
40 ~ 110
UB
65 ~ 160
UC
Marking Symbol
1
Transistor
2SC2404
PC — Ta
IC — VCE
IC — IB
200
175
150
125
100
75
12
10
8
12
10
8
Ta=25˚C
IB=100µA
VCE=6V
Ta=25˚C
80µA
60µA
6
6
40µA
20µA
4
4
50
2
2
25
0
0
0
0
20 40 60 80 100 120 140 160
0
6
12
18
0
60
120
180
(
)
(
V
)
(
)
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
Base current IB µA
IC — VBE
VCE(sat) — IC
hFE — IC
30
25
20
15
10
5
100
360
300
240
180
120
60
IC/IB=10
VCE=6V
VCE=6V
30
10
25˚C
Ta=75˚C
–25˚C
3
1
Ta=75˚C
25˚C
0.3
0.1
–25˚C
Ta=75˚C
25˚C
–25˚C
0.03
0.01
0
0
0.1
0
0.4
0.8
1.2
1.6
2.0
0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
(
V
)
(
)
(
)
Base to emitter voltage VBE
Collector current IC mA
Collector current IC mA
fT — IE
Cre — VCE
Cob — VCB
1200
1000
800
600
400
200
0
2.4
2.0
1.6
1.2
0.8
0.4
0
1.2
IC=1mA
f=10.7MHz
Ta=25˚C
IE=0
f=1MHz
Ta=25˚C
VCB=6V
Ta=25˚C
1.0
0.8
0.6
0.4
0.2
0
– 0.1 – 0.3
–1
–3
–10 –30 –100
0.1
0.3
1
3
10
30
100
0
5
10
15
20
25
30
(
)
(
V
)
( )
Collector to base voltage VCB V
Emitter current IE mA
Collector to emitter voltage VCE
2
Transistor
2SC2404
PG — IE
NF — IE
bie — gie
40
35
30
25
20
15
10
5
12
10
8
20
f=100MHz
Rg=50kΩ
Ta=25˚C
150
100
f=100MHz
Rg=50Ω
Ta=25˚C
yie=gie+jbie
–4mA
18 VCE=10V
16
–7mA
–2mA
VCE=10V
6V
14
12
10
8
100
58
6
–1mA
58
4
VCE=6V, 10V
6
25
4
25
2
2
f=10.7MHz
0
0
0
– 0.1 – 0.3
–1
–3
–10 –30 –100
– 0.1 – 0.3
–1
–3
–10 –30 –100
0
3
6
9
12
15
(
)
(
)
(
)
Emitter current IE mA
Emitter current IE mA
Input conductance gie mS
bre — gre
bfe — gfe
boe — goe
0
–1
–2
–3
–4
–5
–6
0
–20
1.2
1.0
0.8
0.6
0.4
0.2
0
10.7
58
10.7
25
150
– 0.4mA
yre=gre+jbre
VCE=10V
–1mA
150
–2mA
–4mA
100
100
–2mA
–4mA
–1mA
–40
150
–7mA
–4mA
100
58
58
IE=–7mA
f=150MHz
–60
IE=–7mA
58
100
–80
100
25
–100
–120
yfe=gfe+jbfe
VCE=10V
yoe=goe+jboe
VCE=10V
f=10.7MHz
f=150MHz
– 0.5 – 0.4 – 0.3 – 0.2 – 0.1
0
0
20
40
60
80
100
0
0.1
0.2
0.3
0.4
0.5
)
(
)
(
)
(
Output conductance goe mS
Reverse transfer conductance gre mS
Forward transfer conductance gfe mS
3
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2001 MAR
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