IRFR024TRPBF [KERSEMI]
Power MOSFET; 功率MOSFET![IRFR024TRPBF](http://pdffile.icpdf.com/pdf1/p00186/img/icpdf/IRFR02_1049905_icpdf.jpg)
型号: | IRFR024TRPBF |
厂家: | ![]() |
描述: | Power MOSFET |
文件: | 总7页 (文件大小:4502K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
IRFR024, IRFU024, SiHFR024, SiHFU024
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
PRODUCT SUMMARY
VDS (V)
60
Available
• Surface Mount (IRFR024/SiHFR024)
0.10
RDS(on) (Ω)
VGS = 10 V
RoHS*
• Straight Lead (IRFU024/SiHFU024)
COMPLIANT
Qg (Max.) (nC)
25
5.8
• Available in Tape and Reel
• Fast Switching
Q
gs (nC)
Qgd (nC)
11
Configuration
Single
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
D
DPAK
IPAK
(TO-252)
(TO-251)
DESCRIPTION
G
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
S
N-Channel MOSFET
ORDERING INFORMATION
Package
DPAK (TO-252)
DPAK (TO-252)
DPAK (TO-252)
IPAK (TO-251)
IRFU024PbF
SiHFU024-E3
IRFU024
IRFR024PbF
SiHFR024-E3
IRFR024
IRFR024TRPbFa
SiHFR024T-E3a
IRFR024TRa
-
Lead (Pb)-free
-
IRFR024TRLa
SiHFR024TLa
SnPb
SiHFR024
SiHFR024Ta
SiHFU024
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
60
20
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
TC = 25 °C
TC =100°C
14
9.0
Continuous Drain Current
VGS at 10 V
ID
A
Pulsed Drain Currenta
IDM
56
Linear Derating Factor
0.33
0.020
91
W/°C
mJ
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
EAS
PD
TC = 25 °C
TA = 25 °C
42
W
2.5
dV/dt
5.5
V/ns
www.kersemi.com
1
IRFR024, IRFU024, SiHFR024, SiHFU024
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
- 55 to + 150
260d
UNIT
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TJ, Tstg
°C
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 541 µH, RG = 25 Ω, IAS = 14 A (see fig. 12).
c. ISD ≤ 17 A, dI/dt ≤ 110 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-
-
110
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJC
-
-
-
-
50
°C/W
Maximum Junction-to-Case (Drain)
3.0
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = - 250 µA
60
-
-
-
V
V/°C
V
-
0.073
2.0
-
-
-
-
-
-
4.0
100
25
250
0.10
-
VGS
=
20 V
-
nA
VDS = 60 V, VGS = 0 V
-
-
Zero Gate Voltage Drain Current
IDSS
µA
V
DS = 48 V, VGS = 0 V, TJ = 125 °C
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
VGS = 10 V
ID = 8.4 Ab
-
Ω
VDS = 25 V, ID = 8.4 Ab
6.2
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
640
360
79
-
-
-
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
pF
nC
-
25
5.8
11
-
ID = 17 A, VDS = 48 V,
see fig. 6 and 13b
Qgs
Qgd
td(on)
tr
VGS = 10 V
-
-
13
58
25
42
-
VDD = 30 V, ID = 17A,
ns
RG = 18 Ω, RD = 1.7 Ω, see fig. 10b
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
D
Between lead,
Internal Drain Inductance
Internal Source Inductance
LD
LS
-
-
4.5
7.5
-
-
6 mm (0.25") from
package and center of
die contact
nH
G
S
www.kersemi.com
2
IRFR024, IRFU024, SiHFR024, SiHFU024
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
-
-
-
-
14
56
A
G
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = 14 A, VGS = 0 Vb
-
-
-
-
1.5
180
0.64
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
88
ns
µC
TJ = 25 °C, IF = 17 A, dI/dt = 100 A/µsb
Qrr
ton
0.29
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
www.kersemi.com
3
IRFR024, IRFU024, SiHFR024, SiHFU024
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
www.kersemi.com
4
IRFR024, IRFU024, SiHFR024, SiHFU024
RD
VDS
VGS
D.U.T.
RG
+
V
-
DD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.kersemi.com
5
IRFR024, IRFU024, SiHFR024, SiHFU024
L
VDS
VDS
Vary tp to obtain
required IAS
tp
VDD
D.U.T
IAS
RG
+
-
VDD
VDS
10 V
0.01 Ω
tp
IAS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
-
VDS
D.U.T.
VG
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
www.kersemi.com
6
IRFR024, IRFU024, SiHFR024, SiHFU024
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T
• Low leakage inductance
current transformer
-
+
-
-
+
RG
• dV/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by duty factor "D"
• D.U.T. - device under test
VDD
Driver gate drive
P.W.
P.W.
Period
Period
D =
V
= 10 V*
GS
D.U.T. I waveform
SD
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. V waveform
DS
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Ripple ≤ 5 %
Inductor current
I
SD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
www.kersemi.com
7
相关型号:
![](http://pdffile.icpdf.com/pdf1/p00022/img/page/IRFR1010Z_106756_files/IRFR1010Z_106756_1.jpg)
![](http://pdffile.icpdf.com/pdf1/p00022/img/page/IRFR1010Z_106756_files/IRFR1010Z_106756_2.jpg)
IRFR1010ZTRLPBF
Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00282/img/page/IRFR1010ZTRR_1681305_files/IRFR1010ZTRR_1681305_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00282/img/page/IRFR1010ZTRR_1681305_files/IRFR1010ZTRR_1681305_2.jpg)
IRFR1010ZTRPBF
Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00282/img/page/IRFR1010ZTRR_1681305_files/IRFR1010ZTRR_1681305_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00282/img/page/IRFR1010ZTRR_1681305_files/IRFR1010ZTRR_1681305_2.jpg)
IRFR1010ZTRRPBF
Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
INFINEON
©2020 ICPDF网 联系我们和版权申明