IRFR1010ZTRPBF [INFINEON]
Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3;
| 型号： | IRFR1010ZTRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 局域网 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：325K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95951A
IRFR1010ZPbF
IRFU1010ZPbF
Features
HEXFET® Power MOSFET
Advanced Process Technology
D
UltraLowOn-Resistance
175°COperatingTemperature
Fast Switching
VDSS = 55V
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
RDS(on) = 7.5mΩ
G
ID = 42A
Description
S
ThisHEXFET® PowerMOSFETutilizesthelatest
processing techniques to achieve extremely low
on-resistancepersiliconarea. Additionalfeatures
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combinetomakethisdesignanextremelyefficient
and reliable device for use in a wide variety of
applications.
I-Pak
IRFU1010ZPbF
D-Pak
IRFR1010ZPbF
Absolute Maximum Ratings
Parameter
Max.
Units
Continuous Drain Current, VGS @ 10V (Silicon Limited)
I
I
I
I
@ T = 25°C
C
91
D
D
D
Continuous Drain Current, VGS @ 10V
@ T = 100°C
C
65
A
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
@ T = 25°C
42
C
360
140
DM
P
@T = 25°C
Power Dissipation
C
W
D
Linear Derating Factor
0.9
W/°C
V
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy
± 20
GS
EAS (Thermally limited)
110
220
mJ
Single Pulse Avalanche Energy Tested Value
Avalanche Current
E
AS (Tested )
IAR
See Fig.12a, 12b, 15, 16
A
Repetitive Avalanche Energy
Operating Junction and
EAR
mJ
T
T
-55 to + 175
J
Storage Temperature Range
°C
STG
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf in (1.1N m)
Thermal Resistance
Parameter
Typ.
–––
Max.
1.11
40
Units
Junction-to-Case
RθJC
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
Rθ
–––
°C/W
JA
RθJA
–––
110
HEXFET® isaregisteredtrademarkofInternationalRectifier.
www.irf.com
1
09/16/10
IRFR/U1010ZPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆
V
∆
(BR)DSS/ TJ Breakdown Voltage Temp. Coefficient ––– 0.051 ––– V/°C Reference to 25°C, ID = 1mA
mΩ
V
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
5.8
–––
–––
–––
–––
–––
7.5
4.0
–––
20
VGS = 10V, ID = 42A
VDS = VGS, ID = 100µA
VDS = 25V, ID = 42A
Forward Transconductance
31
S
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
µA VDS = 55V, VGS = 0V
250
200
V
DS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA VGS = 20V
VGS = -20V
ID = 42A
––– -200
Qg
Qgs
Qgd
td(on)
tr
63
17
23
17
76
42
48
4.5
95
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
–––
–––
–––
–––
–––
–––
–––
nC VDS = 44V
VGS = 10V
VDD = 28V
Rise Time
ID = 42A
td(off)
tf
Turn-Off Delay Time
ns RG = 7.6 Ω
VGS = 10V
Fall Time
D
S
LD
Internal Drain Inductance
Between lead,
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
VGS = 0V
DS = 25V
pF ƒ = 1.0MHz
Ciss
Input Capacitance
––– 2840 –––
Coss
Crss
Coss
Coss
Output Capacitance
–––
–––
470
250
–––
–––
V
Reverse Transfer Capacitance
Output Capacitance
––– 1630 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
Output Capacitance
–––
–––
360
560
–––
–––
Coss eff.
Effective Output Capacitance
V
GS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
Continuous Source Current
–––
–––
42
MOSFET symbol
S
(Body Diode)
A
showing the
I
Pulsed Source Current
–––
–––
360
integral reverse
SM
(Body Diode)
p-n junction diode.
V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
24
1.3
36
30
V
T = 25°C, I = 42A, V = 0V
J S GS
SD
t
ns T = 25°C, I = 42A, VDD = 28V
J F
rr
di/dt = 100A/µs
Q
20
nC
rr
t
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
2
www.irf.com
IRFR/U1010ZPbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM
BOTTOM
4.5V
60µs PULSE WIDTH
≤
≤60µs PULSE WIDTH
4.5V
1
Tj = 175°C
Tj = 25°C
1
1
0.1
1
10
100
0.1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
120
T
= 25°C
J
100
80
60
40
20
0
100
10
1
T
= 175°C
J
T
= 175°C
J
T
= 25°C
V
J
V
= 10V
= 25V
DS
380µs PULSE WIDTH
DS
60µs PULSE WIDTH
≤
0.1
2
4
6
8
10
0
20
40
60
80
100
I ,Drain-to-Source Current (A)
V
, Gate-to-Source Voltage (V)
D
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
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3
IRFR/U1010ZPbF
5000
20
16
12
8
V
C
= 0V,
f = 1 MHZ
GS
I = 42A
D
= C + C , C SHORTED
iss
gs
gd ds
V
= 44V
DS
C
= C
rss
gd
4000
3000
2000
1000
0
VDS= 28V
VDS= 11V
C
= C + C
ds
oss
gd
C
iss
4
C
C
oss
rss
0
0
20
40
60
80
100
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000.00
100.00
10.00
1.00
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
1msec
10msec
T
= 25°C
1
J
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
DC
GS
0.1
0.10
1
10
, Drain-toSource Voltage (V)
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
, Source-to-Drain Voltage (V)
V
V
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFR/U1010ZPbF
2.5
2.0
1.5
1.0
0.5
100
80
60
40
20
0
I
= 42A
LIMITED BY PACKAGE
D
V
= 10V
GS
25
50
75
100
125
150
175
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T
, Case Temperature (°C)
C
T
, Junction Temperature (°C)
J
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current vs.
vs.Temperature
CaseTemperature
10
1
0.1
D = 0.50
0.20
0.10
0.05
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
0.3854 0.000251
R1
τ
J τJ
τ
τ
Cτ
τ
0.02
0.01
1τ1
τ
2 τ2
3τ3
0.3138 0.001092
0.4102 0.015307
0.01
0.001
Ci= τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFR/U1010ZPbF
500
400
300
200
100
0
15V
I
D
TOP
7.6A
11A
42A
DRIVER
L
V
BOTTOM
DS
D.U.T
AS
R
+
-
G
V
DD
I
A
2
V0GVS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
4.0
3.5
3.0
2.5
2.0
1.5
1.0
GS
GD
I
I
I
= 1.0mA
= 250µA
= 100µA
D
D
D
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
L
VCC
DUT
0
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
1K
T
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
6
www.irf.com
IRFR/U1010ZPbF
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses
0.01
0.05
0.10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
120
100
80
60
40
20
0
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 1% Duty Cycle
= 42A
Single Pulse
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Fig 16. Maximum Avalanche Energy
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
vs.Temperature
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7
IRFR/U1010ZPbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
-
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
8
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IRFR/U1010ZPbF
D-Pak (TO-252AA) Package Outline
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WIT H AS S E MB L Y
LOT CODE 1234
ASS EMBLED ON WW 16, 1999
IN THE ASSEMBLY LINE "A"
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YEAR 9 = 1999
WE E K 16
IRFU120
916A
12
34
LINE A
Note: "P" in assembly lineposition
AS S EMBLY
LOT CODE
indicates "Lead-Free"
OR
PART NUMBER
DATE CODE
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
12 34
YEAR 9 = 1999
AS S E MB L Y
LOT CODE
WEE K 16
A = AS S EMBLY S IT E CODE
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
9
IRFR/U1010ZPbF
I-Pak (TO-251AA) Package Outline
I-Pak (TO-251AA) Part Marking Information
PART NUMBER
EXAMPLE: THIS IS AN IRFU120
INTERNATIONAL
WIT H AS S E MBLY
DAT E CODE
YEAR 9 = 1999
WE EK 19
RECTIFIER
LOGO
IRF U120
919A
78
LOT CODE 5678
AS S EMBLED ON WW 19, 1999
IN THE ASS EMBLY LINE "A"
56
LINE A
AS S EMBLY
LOT CODE
"P" in assembly line
pos ition indicates "L ead-F ree"
OR
PART NUMBER
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
INTERNAT IONAL
RECT IFIER
LOGO
IRFU120
56 78
YEAR 9 = 1999
AS S E MBL Y
LOT CODE
WE EK 19
A = AS S E MB L Y S IT E CODE
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com
IRFR/U1010ZPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters
TR
TRR
TRL
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
Coss eff. is a fixed capacitance that gives the same charging time
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.13mH
RG = 25Ω, IAS = 42A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
as Coss while VDS is rising from 0 to 80% VDSS
.
ꢀ
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
application note #AN-994
Rθ is measured at TJ approximately 90°C
Data and specifications subject to change without notice.
This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/2010
www.irf.com
11
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