FQU2N60C [KERSEMI]
N-Channel QFET MOSFET; N沟道MOSFET QFET
| 型号： | FQU2N60C |
| 厂家： | 
Kersemi Electronic Co., Ltd. |
| 描述： | N-Channel QFET MOSFET |
| 文件： | 总8页 (文件大小：842K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FQD2N60C / FQU2N60C
N-Channel QFET® MOSFET
600 V, 1.9 A, 4.7 Ω
Features
Description
These N-Channel enhancement mode power field effect
transistors are produced using Corise Semiconductorÿs proprietary,
planar stripe, DMOS technology.
• 1.9 A, 600 V, R
= 4.7 Ω (Max.) @ V = 10 V,
GS
DS(on)
ID = 0.95 A
•
•
•
•
Low Gate Charge (Typ. 8.5 nC)
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
Low Crss (Typ. 4.3 pF)
100% Avalanche Tested
RoHS Compliant
suited for high efficiency switch mode power supply.
D
D
!
G
G
●
D
◀
▲
S
S
●
●
!
G
I-PAK
D-PAK
!
S
Absolute Maximum Ratings
Symbol
Parameter
FQD2N60C / FQU2N60C
Unit
V
V
Drain-Source Voltage
600
1.9
DSS
I
Drain Current
- Continuous (T = 25°C)
A
D
C
- Continuous (T = 100°C)
1.14
7.6
A
C
(Note 1)
I
Drain Current
- Pulsed
A
DM
V
E
Gate-Source Voltage
± 30
120
V
GSS
AS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
I
1.9
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
4.4
mJ
V/ns
W
AR
dv/dt
4.5
P
Power Dissipation (T = 25°C)*
2.5
D
A
Power Dissipation (T = 25°C)
44
W
C
- Derate above 25°C
Operating and Storage Temperature Range
0.35
-55 to +150
300
W/°C
°C
°C
T , T
J
STG
T
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
L
Thermal Characteristics
Symbol
Parameter
Unit
°C/W
°C/W
°C/W
FQD2N60C / FQU2N60C
R
R
R
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient, Max.
2.87
50
θJC
θJA
θJA
110
* When mounted on the minimum pad size recommended (PCB Mount)
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1
Device Marking
FQD2N60C
Device
FQD2N60C
FDU2N60C
Package
D-PAK
Reel Size
Tape Width
Quantity
-
-
-
-
FDU2N60C
I-PAK
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ Max Unit
Off Characteristics
BV
Drain-Source Breakdown Voltage
V
= 0 V, I = 250 µA
600
--
--
--
--
V
DSS
GS
D
∆BV
/
Breakdown Voltage Temperature
Coefficient
I
= 250 µA, Referenced to 25°C
D
0.6
V/°C
DSS
∆T
J
I
Zero Gate Voltage Drain Current
V
V
V
V
= 600 V, V = 0 V
--
--
--
--
--
--
--
--
1
µA
µA
nA
nA
DSS
DS
DS
GS
GS
GS
= 480 V, T = 125°C
10
C
I
I
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 30 V, V = 0 V
100
-100
GSSF
DS
= -30 V, V = 0 V
GSSR
DS
On Characteristics
V
Gate Threshold Voltage
V
V
= V , I = 250 µA
2.0
--
--
4.0
4.7
V
GS(th)
DS
GS
GS
D
R
Static Drain-Source
On-Resistance
= 10 V, I = 0.95 A
3.6
Ω
DS(on)
D
g
Forward Transconductance
V
= 40 V, I = 0.95 A
(Note 4)
--
5.0
--
S
FS
DS
D
Dynamic Characteristics
C
C
C
Input Capacitance
V
= 25 V, V = 0 V,
--
--
--
180
20
235
25
pF
pF
pF
iss
DS
GS
f = 1.0 MHz
Output Capacitance
oss
rss
Reverse Transfer Capacitance
4.3
5.6
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
= 300 V, I = 2 A,
--
--
--
--
--
--
--
9
28
60
58
66
12
--
ns
ns
d(on)
DD
G
D
R
= 25 Ω
25
24
28
8.5
1.3
4.1
r
ns
d(off)
(Note 4, 5)
(Note 4, 5)
ns
f
Q
Q
Q
V
V
= 480 V, I = 2 A,
nC
nC
nC
g
DS
GS
D
= 10 V
gs
--
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
I
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
1.9
7.6
1.4
--
A
A
S
SM
V
Drain-Source Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 1.9 A
--
V
SD
GS
S
t
= 0 V, I = 2 A,
230
1.0
ns
µC
rr
GS
F
S
dI / dt = 100 A/µs
(Note 4)
Q
Reverse Recovery Charge
--
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 56mH, I = 2A, V = 50V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 2A, di/dt ≤ 200A/µs, V ≤ BV
Starting T = 25°C
J
SD
DD
DSS,
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
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2
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
101
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
100
150oC
Bottom: 4.5 V
-55oC
100
25oC
-1
10
※
Notes :
1. 250µ s Pulse Test
2. TC = 25
※
Notes :
1. VDS = 40V
℃
2. 250µ s Pulse Test
-2
-1
10
10
100
101
-1
2
4
6
8
10
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
12
10
VGS = 10V
8
100
6
4
150℃
VGS = 20V
※
Notes :
1. VGS = 0V
2
25℃
2. 250µ s Pulse Test
※
Note: T = 25℃
J
-1
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
500
450
400
350
300
250
200
150
100
50
12
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = C + C
gd
C
rss = Cds
gd
VDS = 120V
10
VDS = 300V
C
iss
8
VDS = 480V
C
oss
6
4
2
※
Notes ;
1. VGS = 0 V
2. f = 1 MHz
C
rss
※
Note: ID = 2A
6
0
10
0
100
101
-1
0
2
4
8
10
Q , Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
G
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3
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
※
Notes :
0.9
0.8
1. V = 0 V
2. IDG=S 250 µ A
※
Notes:
0.5
0.0
1. V = 10 V
2. IDG=S 0.95 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T, Junction Temperature [oC]
T, Junction Temperature [oC]
J
J
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
2.0
1.6
1.2
0.8
0.4
0.0
Operation in This Area
101
is Limited by R DS(on)
100
1 ms
10 ms
µs
100
100 ms
DC
-1
10
※
Notes :
1. TC = 25 oC
2. T = 150 oC
J
3. Single Pulse
-2
10
100
101
102
103
25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [℃]
Figure 11. Typical Drain Current Slope
vs. Gate Resistance
Figure 12. Typical Drain-Source Voltage
Slope vs. Gate Resistance
D = 0 .5
※
N otes
:
1 00
1. Z
(t) = 2.87
℃
/W M ax.
2. DθuJtCy Factor, D =t1/t2
0 .2
3. TJM - TC
=
P DM
*
Zθ JC (t)
0.1
0 .05
PDM
0 .0 2
0.0 1
1 0-1
t1
t2
s in gle p ulse
10-4
1 0-5
1 0-3
10 -2
1 0-1
10 0
1 01
t1, S quare W ave P ulse D uration [sec]
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4
Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
10V
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
10V
td(on)
tr
td(off)
tf
t on
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
L
1
2
----
--------------------
BVDSS - VDD
EAS
=
LIAS
VDS
ID
2
BVDSS
IAS
RG
VDD
ID (t)
VDD
VDS (t)
DUT
10V
t p
t p
Time
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5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
VGS
--------------------------
Gate Pulse Period
D =
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
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6
D-PAK
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7
I-PAK
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8
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