FQU2N90TU-WS [ONSEMI]
N 沟道 QFET® MOSFET 900V，1.7A，7.2Ω;
| 型号： | FQU2N90TU-WS |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 QFET® MOSFET 900V，1.7A，7.2Ω |
| 文件： | 总9页 (文件大小：1886K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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FQD2N90 / FQU2N90
N-Channel QFET® MOSFET
900 V, 1.7 A, 7.2 Ω
Features
• 1.7 A, 900 V, RDS(on) = 7.2 Ω (Max.) @ VGS = 10 V,
ID = 0.85 A
• Low Gate Charge (Typ. 12 nC)
• Low Crss (Typ. 5.5 pF)
• 100% Avalanche Tested
• RoHS Compliant
Description
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
D
D
G
I-PAK
G
S
D-PAK
G
D
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
S
FQD2N90TM
FQU2N90TU-WS
Symbol
Parameter
Unit
FQU2N90TU-AM002
*
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Thermal Characteristics
FQD2N90TM
FQU2N90TU-WS
Symbol
Parameter
Unit
FQU2N90TU-AM002
RJC
RJA
Thermal Resistance, Junction to Case, Max.
2.5
110
50
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient (*1 in2 pad of 2 ozcopper), Max.
oC/W
Publication Order Number:
© 2017 Semiconductor Components Industries, LLC
August-2017, Rev. 2
FQD2N90/D
1
Package Marking and Ordering Information
Part Number
FQD2N90TM
Top Mark
FQD2N90
FQU2N90S
FQU2N90
Package
D-PAK
I-PAK
Packing Method Reel Size
Tape Width
16 mm
N/A
Quantity
2500 units
75 units
330 mm
N/A
Tape and Reel
Tube
FQU2N90TU-WS
FQU2N90TU-AM002
I-PAK
N/A
N/A
75 units
Tube
Electrical Characteristics TC = 25oC unless otherwise noted.
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1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 111 mH, IAS = 1.7 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25oC
3. ISD ≤ 2.2 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, Starting TJ = 25oC
4. Essentially independent of operating temperature
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ꢒꢂꢃꢃꢂꢓꢀꢅꢀꢀꢀꢀꢉꢍꢉꢀꢊ
ꢄꢅꢀꢀ
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ꢀꢀꢀꢌꢈꢀꢌꢍꢋ ꢅꢀꢎꢏꢐꢅꢄꢀꢑꢄꢅꢃ
ꢂ
ꢀꢀꢀꢌꢍꢀꢈꢉꢎ ꢔꢀꢕꢖꢗꢔꢄꢀꢆꢄꢔꢃ
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ꢀꢂꢖꢔꢀꢏꢗꢍꢌ!ꢁꢋꢘꢏ"ꢙꢔ ꢋ#ꢈꢗꢒꢙꢔꢚ ꢜ
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ꢗꢊꢄꢁꢊꢍꢁꢘꢎꢆꢙꢐꢈꢆ"ꢘꢃꢄꢌꢅꢆꢉꢃꢄꢄꢅꢎꢍꢆꢊꢎꢛꢆ
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ꢚꢉꢆꢆꢀꢇꢀꢚꢈꢆꢀꢛꢀꢚ
ꢇꢈ
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ꢀ ꢁꢂꢃꢄꢅꢆꢇꢂꢈꢆꢅꢉꢂꢊꢋꢆꢌꢍꢉꢂꢎꢏꢊꢐ
ꢁ
ꢀꢂꢖꢔꢀꢏꢗꢍꢌ!ꢁꢋꢘꢏ"ꢙꢔ ꢋ#ꢈꢗꢒꢙꢔꢚ ꢜ
ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢆꢉꢊꢋꢊꢌꢁꢍꢊꢎꢌꢅꢆꢉꢏꢊꢄꢊꢌꢍꢅꢄꢁꢐꢍꢁꢌꢐ
ꢀꢁꢂꢃꢄꢅꢆꢑꢈꢆꢒꢊꢍꢅꢆꢆꢉꢏꢊꢄꢂꢅꢆꢉꢏꢊꢄꢊꢌꢍꢅꢄꢁꢐꢍꢁꢌꢐ
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3
ꢀ !ꢁꢂꢃꢄꢅꢆꢇꢃꢈꢃꢂꢉꢊꢈꢁꢋꢉꢁꢂꢋꢅꢀꢀꢀꢀꢁꢂꢃꢄꢅꢆꢄꢇꢈꢉꢊ
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ꢏꢌꢏ
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ꢊꢋꢌꢍꢎꢏꢊꢐ
ꢋꢌꢔ
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ꢊꢊꢊꢂꢅꢊꢓ ꢊꢒꢊꢂꢃꢁꢊ
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#ꢂꢃ$ꢔꢑꢕꢖꢋꢆꢑꢃ#ꢍꢈꢗꢍꢇꢉꢖꢔꢇꢍꢃ%ꢇꢘ&
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ꢀꢁꢅ
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ꢏꢆꢑꢀ
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ꢉꢉꢉꢙꢗꢉꢊꢀꢉꢘꢉꢖꢚꢜꢉꢈꢛ
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ꢋ ꢌꢎ
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ꢀꢀꢀ0 ꢈꢀꢏ ꢀ ꢄ ꢀ1ꢀꢏ ꢁ ꢀꢊ ꢀꢐ ꢅ ꢀ2 ꢀ& ꢀ ꢁꢉꢃ!
ꢀ
ꢄ
ꢋ ꢌꢏ
ꢋ ꢌꢋ ꢍ
"
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ꢋ ꢌꢋ ꢎ
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ꢀ ꢁꢂ ꢃ ꢄꢅ ꢆꢇ ꢈ ꢄꢀ ꢅ
ꢀꢃ
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ꢀ
ꢁꢂꢃ ꢄ ꢆ ꢅ ꢉꢇ ꢂꢊ ꢅ ꢋ ꢇ ꢂꢌ ꢆ ꢍꢎ ꢇ ꢂꢏ ꢆ ꢉꢅ ꢀꢐꢑ ꢒ ꢂꢓꢎ ꢇ ꢈ
ꢀ
ꢀꢁꢂꢃꢄꢅꢆ''ꢇꢆ#ꢄꢈꢌꢐꢁꢅꢌꢋꢆ#ꢙꢅꢄ$ꢈꢕꢆꢗꢅꢐꢊꢓꢌꢐꢅꢆꢎꢃꢄꢏꢅ
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4
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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6
Mechanical Dimensions
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7
Mechanical Dimensions
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相关型号：
FQU30N06LTU
Power Field-Effect Transistor, 24A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
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FQU30N06TU
Power Field-Effect Transistor, 22.7A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
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FQU3N25TU
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